Підписатись
Yong-Hang Zhang
Yong-Hang Zhang
Prof., School of Electrical, Computer and Energy Engineering
Підтверджена електронна адреса в asu.edu - Домашня сторінка
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Посилання
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Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
EH Steenbergen, BC Connelly, GD Metcalfe, H Shen, M Wraback, ...
Applied Physics Letters 99 (25), 251110-251110-3, 2011
3732011
Monocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17%
Y Zhao, M Boccard, S Liu, J Becker, XH Zhao, CM Campbell, E Suarez, ...
Nature Energy 1 (6), 16067, 2016
2712016
High Power Vcsels With Transverse Mode Control
N Samal, S Johnson, YH Zhang
US Patent App. 10/592,999, 2005
2362005
Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
H. Tran, T. Pham, J. Margetis, Y. Zhou, W. Dou, P. C. Grant, J. M. Grant, S ...
ACS Photonics 6 (11), 2807-2815, 2019
2242019
Electrically injected GeSn lasers on Si operating up to 100 K
Y Zhou, Y Miao, S Ojo, H Tran, G Abernathy, JM Grant, S Amoah, ...
Optica 7 (8), 924-928, 2020
2152020
Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices
HS Kim, OO Cellek, ZY Lin, ZY He, XH Zhao, S Liu, H Li, YH Zhang
APPLIED PHYSICS LETTERS 101, 161114, 2012
1892012
Structural and optical properties of self‐assembled InGaAs quantum dots
D Leonard, S Fafard, K Pond, YH Zhang, JL Merz, PM Petroff
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994
1851994
Continuous wave operation of InAs/InAsxSb1− x midinfrared lasers
YH Zhang
Applied physics letters 66 (2), 118-120, 1995
1621995
Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots
R Leon, GM Swift, B Magness, WA Taylor, YS Tang, KL Wang, P Dowd, ...
Applied Physics Letters 76 (15), 2074-2076, 2000
1562000
Tunable optical gratings based on buckled nanoscale thin films on transparent elastomeric substrates
C Yu, K O’Brien, YH Zhang, H Yu, H Jiang
Applied Physics Letters 96 (4), 041111, 2010
1552010
Collective excitations in antidots
K Kern, D Heitmann, P Grambow, YH Zhang, K Ploog
Physical review letters 66 (12), 1618, 1991
1551991
Monolithic infrared silicon photonics: the rise of (Si) GeSn semiconductors
O Moutanabbir, S Assali, X Gong, E O'Reilly, CA Broderick, B Marzban, ...
Applied Physics Letters 118 (11), 110502, 2021
1512021
Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices
DH Chow, RH Miles, TC Hasenberg, AR Kost, YH Zhang, HL Dunlap, ...
Applied physics letters 67 (25), 3700-3702, 1995
1501995
Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi2Te3 by Multifunctionality of Native Defects
J Suh, KM Yu, D Fu, X Liu, F Yang, J Fan, DJ Smith, YH Zhang, ...
Advanced Materials 27 (24), 3681-3686, 2015
1272015
Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs (001) substrates
X Liu, DJ Smith, J Fan, YH Zhang, H Cao, YP Chen, J Leiner, BJ Kirby, ...
Applied Physics Letters 99 (17), 171903, 2011
1232011
Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
P. T. Webster, N. A. Riordan, S. Liu, E. H. Steenbergen, R. A. Synowicki, Y ...
J. Appl. Phys. 118, 245706, 2015
1182015
Midwave infrared stimulated emission from a GaInSb/InAs superlattice
RH Miles, DH Chow, YH Zhang, PD Brewer, RG Wilson
Applied physics letters 66 (15), 1921-1923, 1995
1151995
Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement
SH Lim, JJ Li, EH Steenbergen, YH Zhang
Progress in Photovoltaics: Research and Applications 21 (3), 344-350, 2013
1002013
Large g-factor enhancement in high-mobility InAs/AlSb quantum wells
YG Sadofyev, A Ramamoorthy, B Naser, JP Bird, SR Johnson, YH Zhang
Applied physics letters 81 (10), 1833-1835, 2002
852002
Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy
MJ DiNezza, XH Zhao, S Liu, YH Zhang
APPLIED PHYSICS LETTERS 103, 193901, 2013
772013
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