Experimental and theoretical approach to spin splitting in modulation-doped G Engels, J Lange, T Schäpers, H Lüth
Physical Review B 55 (4), R1958, 1997
689 1997 Effect of the heterointerface on the spin splitting in modulation doped T Schäpers, G Engels, J Lange, T Klocke, M Hollfelder, H Lüth
Journal of applied physics 83 (8), 4324-4333, 1998
376 1998 Hall effect measurements on InAs nanowires C Blömers, T Grap, MI Lepsa, J Moers, S Trellenkamp, D Grützmacher, ...
Applied physics letters 101 (15), 2012
131 2012 Spin-orbit coupling and phase coherence in InAs nanowires S Estévez Hernández, M Akabori, K Sladek, C Volk, S Alagha, ...
Physical Review B—Condensed Matter and Materials Physics 82 (23), 235303, 2010
124 2010 Realization of a vertical topological p–n junction in epitaxial Sb2 Te3 /Bi2 Te3 heterostructures M Eschbach, E Młyńczak, J Kellner, J Kampmeier, M Lanius, E Neumann, ...
Nature communications 6 (1), 8816, 2015
123 2015 Superconductor/semiconductor junctions T Schäpers
Springer Science & Business Media, 2001
115 2001 Selective area growth and stencil lithography for in situ fabricated quantum devices P Schüffelgen, D Rosenbach, C Li, TW Schmitt, M Schleenvoigt, AR Jalil, ...
Nature nanotechnology 14 (9), 825-831, 2019
114 2019 Signatures of interaction-induced helical gaps in nanowire quantum point contacts S Heedt, N Traverso Ziani, F Crépin, W Prost, S Trellenkamp, J Schubert, ...
Nature Physics 13 (6), 563-567, 2017
103 2017 Molecular beam epitaxy growth of GaAs/InAs core–shell nanowires and fabrication of InAs nanotubes T Rieger, M Luysberg, T Schäpers, D Grützmacher, MI Lepsa
Nano letters 12 (11), 5559-5564, 2012
98 2012 Effect of Rashba spin-orbit coupling on magnetotransport in T Schäpers, J Knobbe, VA Guzenko
Physical Review B—Condensed Matter and Materials Physics 69 (23), 235323, 2004
98 2004 Flux quantization effects in InN nanowires T Richter, C Blömers, H Lüth, R Calarco, M Indlekofer, M Marso, ...
Nano letters 8 (9), 2834-2838, 2008
94 2008 Electronic phase coherence in InAs nanowires C Blömers, MI Lepsa, M Luysberg, D Grutzmacher, H Luth, T Schapers
Nano letters 11 (9), 3550-3556, 2011
92 2011 Interference ferromagnet/semiconductor/ferromagnet spin field-effect transistor T Schäpers, J Nitta, HB Heersche, H Takayanagi
Physical Review B 64 (12), 125314, 2001
84 2001 Effect of Si-doping on InAs nanowire transport and morphology S Wirths, K Weis, A Winden, K Sladek, C Volk, S Alagha, TE Weirich, ...
Journal of applied physics 110 (5), 2011
82 2011 Suppression of weak antilocalization in T Schäpers, VA Guzenko, MG Pala, U Zülicke, M Governale, J Knobbe, ...
Physical Review B—Condensed Matter and Materials Physics 74 (8), 081301, 2006
80 2006 Growth, characterization, and transport properties of ternary (Bi1− xSbx) 2Te3 topological insulator layers C Weyrich, M Drögeler, J Kampmeier, M Eschbach, G Mussler, ...
Journal of Physics: Condensed Matter 28 (49), 495501, 2016
78 2016 Self-catalyzed VLS grown InAs nanowires with twinning superlattices T Grap, T Rieger, C Blömers, T Schäpers, D Grützmacher, MI Lepsa
Nanotechnology 24 (33), 335601, 2013
77 2013 Weak antilocalization in a polarization-doped AlxGa1− xN∕ GaN heterostructure with single subband occupation N Thillosen, T Schäpers, N Kaluza, H Hardtdegen, VA Guzenko
Applied physics letters 88 (2), 2006
73 2006 Magnetosubbands of semiconductor quantum wires with Rashba spin-orbit coupling J Knobbe, T Schäpers
Physical Review B—Condensed Matter and Materials Physics 71 (3), 035311, 2005
70 2005 Ballistic transport and exchange interaction in InAs nanowire quantum point contacts S Heedt, W Prost, J Schubert, D Grutzmacher, T Schäpers
Nano letters 16 (5), 3116-3123, 2016
67 2016 
Detlev GruetzmacherDirector at the Peter Grünberg Institute, Forschungszentrum JülichПідтверджена електронна адреса в fz-juelich.de
