Predictive hot-carrier modeling of n-channel MOSFETs M Bina, S Tyaginov, J Franco, K Rupp, Y Wimmer, D Osintsev, B Kaczer, ...
IEEE Transactions on Electron Devices 61 (9), 3103-3110, 2014
98 2014 Understanding and modeling the temperature behavior of hot-carrier degradation in SiON nMOSFETs S Tyaginov, M Jech, J Franco, P Sharma, B Kaczer, T Grasser
IEEE Electron Device Letters 37 (1), 84-87, 2015
86 2015 Interface traps density-of-states as a vital component for hot-carrier degradation modeling SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ...
Microelectronics Reliability 50 (9-11), 1267-1272, 2010
79 2010 Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor MI Vexler, SE Tyaginov, AF Shulekin
Journal of Physics: Condensed Matter 17 (50), 8057, 2005
71 2005 Physics-based hot-carrier degradation modeling SE Tyaginov, I Starkov, H Enichlmair, JM Park, C Jungemann, T Grasser
ECS Transactions 35 (4), 321, 2011
59 2011 Observation of normally distributed energies for interface trap recovery after hot-carrier degradation G Pobegen, S Tyaginov, M Nelhiebel, T Grasser
IEEE electron device letters 34 (8), 939-941, 2013
58 2013 Modeling of hot-carrier degradation: Physics and controversial issues S Tyaginov, T Grasser
2012 IEEE International Integrated Reliability Workshop Final Report, 206-215, 2012
56 2012 Reliability and variability of advanced CMOS devices at cryogenic temperatures A Grill, E Bury, J Michl, S Tyaginov, D Linten, T Grasser, B Parvais, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020
47 2020 Physical modeling of hot-carrier degradation for short-and long-channel MOSFETs S Tyaginov, M Bina, J Franco, D Osintsev, O Triebl, B Kaczer, T Grasser
2014 IEEE International Reliability Physics Symposium, XT. 16.1-XT. 16.8, 2014
46 2014 M Jech, AM El-Sayed, S Tyaginov, AL Shluger, T Grasser
Physical Review B 100 (19), 195302, 2019
45 2019 Hot-carrier degradation caused interface state profile—Simulation versus experiment I Starkov, S Tyaginov, H Enichlmair, J Cervenka, C Jungemann, ...
Journal of Vacuum Science & Technology B 29 (1), 2011
45 2011 Modeling of hot-carrier degradation in nLDMOS devices: Different approaches to the solution of the Boltzmann transport equation P Sharma, S Tyaginov, Y Wimmer, F Rudolf, K Rupp, M Bina, ...
IEEE Transactions on Electron Devices 62 (6), 1811-1818, 2015
43 2015 Origins and implications of increased channel hot carrier variability in nFinFETs B Kaczer, J Franco, M Cho, T Grasser, PJ Roussel, S Tyaginov, M Bina, ...
2015 IEEE International Reliability Physics Symposium, 3B. 5.1-3B. 5.6, 2015
41 2015 Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET S Tyaginov, I Starkov, O Triebl, H Ceric, T Grasser, H Enichlmair, JM Park, ...
2011 International Conference on Simulation of Semiconductor Processes and …, 2011
37 2011 Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation M Bina, K Rupp, S Tyaginov, O Triebl, T Grasser
2012 International Electron Devices Meeting, 30.5. 1-30.5. 4, 2012
34 2012 Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ...
2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017
32 2017 Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V G , V D } Bias Space: Implications and Peculiarities M Jech, G Rott, H Reisinger, S Tyaginov, G Rzepa, A Grill, D Jabs, ...
IEEE Transactions on Electron Devices 67 (8), 3315-3322, 2020
30 2020 Electrical characterization and modeling of the Au/CaF2/nSi (111) structures with high-quality tunnel-thin fluoride layer MI Vexler, NS Sokolov, SM Suturin, AG Banshchikov, SE Tyaginov, ...
Journal of Applied Physics 105 (8), 2009
30 2009 Physical modeling of bias temperature instabilities in SiC MOSFETs C Schleich, J Berens, G Rzepa, G Pobegen, G Rescher, S Tyaginov, ...
2019 IEEE International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2019
29 2019 Analysis of the threshold voltage turn-around effect in high-voltage n-MOSFETs due to hot-carrier stress I Starkov, H Enichlmair, S Tyaginov, T Grasser
2012 IEEE International Reliability Physics Symposium (IRPS), XT. 7.1-XT. 7.6, 2012
29 2012 
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEEПідтверджена електронна адреса в iue.tuwien.ac.at