The fundamental downscaling limit of field effect transistors D Mamaluy, X Gao
Applied Physics Letters 106 (19), 2015
126 2015 Efficient method for the calculation of ballistic quantum transport D Mamaluy, M Sabathil, P Vogl
Journal of Applied Physics 93 (8), 4628-4633, 2003
122 2003 Contact block reduction method for ballistic transport and carrier densities of open nanostructures D Mamaluy, D Vasileska, M Sabathil, T Zibold, P Vogl
Physical Review B—Condensed Matter and Materials Physics 71 (24), 245321, 2005
118 2005 Quantum transport simulation of experimentally fabricated nano-FinFET HR Khan, D Mamaluy, D Vasileska
IEEE Transactions on Electron Devices 54 (4), 784-796, 2007
81 2007 Semiconductor device modeling D Vasileska, D Mamaluy, HR Khan, K Raleva, SM Goodnick
Journal of Computational and Theoretical Nanoscience 5 (6), 999-1030, 2008
49 2008 Simulation of the impact of process variation on the optimized 10-nm FinFET HR Khan, D Mamaluy, D Vasileska
IEEE transactions on electron devices 55 (8), 2134-2141, 2008
36 2008 Approaching optimal characteristics of 10-nm high-performance devices: A quantum transport simulation study of Si FinFET HR Khan, D Mamaluy, D Vasileska
IEEE transactions on Electron Devices 55 (3), 743-753, 2008
36 2008 Efficient self-consistent quantum transport simulator for quantum devices X Gao, D Mamaluy, E Nielsen, RW Young, A Shirkhorshidian, MP Lilly, ...
Journal of Applied Physics 115 (13), 2014
35 2014 Pis' ma Zh. Eksp. Teor. Fiz., vol. 68 IE Chupis, DA Mamaluy
JETP Letters 68, 922, 1998
21 1998 Influence of interface roughness on quantum transport in nanoscale FinFET H Khan, D Mamaluy, D Vasileska
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
19 2007 Strong nonreciprocity of phonon polaritons of an insulator at its boundary with an ideal metal or superconductor in a magnetic field IE Chupis, DA Mamaluy
Journal of Physics: Condensed Matter 12 (7), 1413, 2000
19 2000 Contact block reduction method and its application to a 10 nm MOSFET device D Mamaluy, A Mannargudi, D Vasileska, M Sabathil, P Vogl
Semiconductor science and technology 19 (4), S118, 2004
18 2004 Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors X Gao, D Mamaluy, PR Mickel, M Marinella
ECS Transactions 69 (5), 183, 2015
17 2015 3D NEGF quantum transport simulator for modeling ballistic transport in nano FinFETs HR Khan, D Mamaluy, D Vasileska
Journal of Physics: Conference Series 107 (1), 012007, 2008
15 2008 Influence of dynamic magnetoelectric interaction on surface polaritons in ferroelectrics IE Chupis, DA Mamaluy
Low Temperature Physics 24 (10), 762-766, 1998
15 1998 Revealing quantum effects in highly conductive δ -layer systems D Mamaluy, JP Mendez, X Gao, S Misra
Communications Physics 4 (1), 205, 2021
13 2021 Prediction of a realistic quantum logic gate using the contact block reduction method M Sabathil, D Mamaluy, P Vogl
Semiconductor science and technology 19 (4), S137, 2004
13 2004 Quantum transport in nanoscale devices D Vasileska, D Mamaluy, I Knezevic, HR Khan, SM Goodnick, H Nalwa
Encyclopedia of Nanoscience and Nanotechnology. American Scientific …, 2010
11 2010 Conductivity and size quantization effects in semiconductor JP Mendez, D Mamaluy
Scientific Reports 12 (1), 16397, 2022
10 2022 Self-consistent treatment of quantum transport in 10 nm FinFET using contact block reduction (CBR) method H Khan, D Mamaluy, D Vasileska
Journal of Computational Electronics 6, 77-80, 2007
10 2007 