Підписатись
Hyungyu Choi
Hyungyu Choi
Sungkyunkwan University
Підтверджена електронна адреса в skku.edu
Назва
Посилання
Посилання
Рік
Recent progress in 1D contacts for 2D‐material‐based devices
MS Choi, N Ali, TD Ngo, H Choi, B Oh, H Yang, WJ Yoo
Advanced Materials 34 (39), 2202408, 2022
392022
Metal–Insulator Transition Driven by Traps in 2D WSe2 Field‐Effect Transistor
F Ali, N Ali, M Taqi, TD Ngo, M Lee, H Choi, WK Park, E Hwang, WJ Yoo
Advanced Electronic Materials 8 (9), 2200046, 2022
132022
Contact resistivity in edge‐contacted graphene field effect transistors
S Lee, H Choi, I Moon, H Shin, K Watanabe, T Taniguchi, WJ Yoo
Advanced Electronic Materials 8 (5), 2101169, 2022
132022
Analysis of p-Type Doping in Graphene Induced by Monolayer-Oxidized TMDs
T Huynh, TD Ngo, H Choi, M Choi, W Lee, TD Nguyen, TT Tran, K Lee, ...
ACS Applied Materials & Interfaces 16 (3), 3694-3702, 2024
62024
Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe2 Semiconductor Devices
Z Wang, N Ali, F Ali, H Choi, H Shin, WJ Yoo
ACS Applied Materials & Interfaces 14 (50), 55787-55794, 2022
52022
P-Type Vertical FETs Realized by Using Fermi-Level Pinning-Free 2D Metallic Electrodes
H Park, H Shin, N Ali, H Choi, BSY Kim, B Kang, MS Choi, WJ Yoo
Nano Letters 25 (1), 368-375, 2024
2024
Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors
F Ali, H Choi, N Ali, Y Hassan, TD Ngo, F Ahmed, WK Park, Z Sun, ...
Advanced Electronic Materials 10 (9), 2400071, 2024
2024
Link between T-Linear Resistivity and Quantum Criticality in Ambipolar Black Phosphorus
N Ali, B Singh, PK Srivastava, F Ali, M Lee, H Park, H Shin, K Lee, H Choi, ...
ACS nano 18 (18), 11978-11987, 2024
2024
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