Підписатись
Marco Fanciulli
Marco Fanciulli
Professor of Condensed Matter Physics, University of Milano Bicocca
Підтверджена електронна адреса в unimib.it - Домашня сторінка
Назва
Посилання
Посилання
Рік
Silicene field-effect transistors operating at room temperature
L Tao, E Cinquanta, D Chiappe, C Grazianetti, M Fanciulli, M Dubey, ...
Nature nanotechnology 10 (3), 227-231, 2015
17732015
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
T Lei, M Fanciulli, RJ Molnar, TD Moustakas, RJ Graham, J Scanlon
Applied physics letters 59 (8), 944-946, 1991
5591991
Colloidal Synthesis of Double Perovskite Cs2AgInCl6 and Mn-Doped Cs2AgInCl6 Nanocrystals
F Locardi, M Cirignano, D Baranov, Z Dang, M Prato, F Drago, M Ferretti, ...
Journal of the American Chemical Society 140 (40), 12989-12995, 2018
5032018
Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface
D Chiappe, E Scalise, E Cinquanta, C Grazianetti, B van den Broek, ...
Advanced Materials 26 (13), 2096-2101, 2014
3952014
Local electronic properties of corrugated silicene phases
D Chiappe, C Grazianetti, G Tallarida, M Fanciulli, A Molle
Advanced Materials 24 (37), 5088-5093, 2012
3472012
Towards oxide electronics: a roadmap
M Coll, J Fontcuberta, M Althammer, M Bibes, H Boschker, A Calleja, ...
Applied surface science 482, 1-93, 2019
3262019
Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag (111)
P Tsipas, S Kassavetis, D Tsoutsou, E Xenogiannopoulou, E Golias, ...
Applied Physics Letters 103 (25), 2013
3232013
Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM
U Russo, D Ielmini, C Cagli, AL Lacaita, S Spiga, C Wiemer, M Perego, ...
2007 IEEE International Electron Devices Meeting, 775-778, 2007
2372007
Ozone-based atomic layer deposition of alumina from TMA: Growth, morphology, and reaction mechanism
SD Elliott, G Scarel, C Wiemer, M Fanciulli, G Pavia
Chemistry of materials 18 (16), 3764-3773, 2006
2332006
Hindering the oxidation of silicene with non‐reactive encapsulation
A Molle, C Grazianetti, D Chiappe, E Cinquanta, E Cianci, G Tallarida, ...
Advanced Functional Materials 23 (35), 4340-4344, 2013
2232013
Getting through the Nature of Silicene: An sp2–sp3 Two-Dimensional Silicon Nanosheet
E Cinquanta, E Scalise, D Chiappe, C Grazianetti, B van den Broek, ...
The Journal of Physical Chemistry C 117 (32), 16719-16724, 2013
2172013
Rare Earth Oxide Thin Films: Growth, Characterization, and Applications
M Fanciulli
Springer 106, 1-14, 2007
2092007
Analog memristive synapse in spiking networks implementing unsupervised learning
E Covi, S Brivio, A Serb, T Prodromakis, M Fanciulli, S Spiga
Frontiers in neuroscience 10, 482, 2016
2072016
In situ chemical and structural investigations of the oxidation of Ge (001) substrates by atomic oxygen
A Molle, MNK Bhuiyan, G Tallarida, M Fanciulli
Applied physics letters 89 (8), 2006
1622006
Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin layers by low energy ion implantation
C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ...
Journal of applied physics 95 (10), 5696-5702, 2004
1472004
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories
F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters
Solid-State Electronics 58 (1), 42-47, 2011
1452011
Conduction-electron spin resonance in zinc-blende GaN thin films
M Fanciulli, T Lei, TD Moustakas
Physical Review B 48 (20), 15144, 1993
1361993
Atomic-layer deposition of Lu2O3
G Scarel, E Bonera, C Wiemer, G Tallarida, S Spiga, M Fanciulli, ...
Applied physics letters 85 (4), 630-632, 2004
1332004
Trap-mediated two-step sensitization of manganese dopants in perovskite nanocrystals
V Pinchetti, A Anand, QA Akkerman, D Sciacca, M Lorenzon, F Meinardi, ...
ACS Energy Letters 4 (1), 85-93, 2018
1162018
Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis
P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ...
Solid-State Electronics 48 (9), 1511-1517, 2004
1102004
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