| Analysis of SEGR in silicon planar gate super-junction power MOSFETs K Muthuseenu, HJ Barnaby, KF Galloway, AE Koziukov, TA Maksimenko, ... IEEE Transactions on Nuclear Science 68 (5), 611-616, 2021 | 25 | 2021 |
| Single-event gate rupture hardened structure for high-voltage super-junction power MOSFETs K Muthuseenu, HJ Barnaby, KF Galloway, AE Koziukov, TA Maksimenko, ... IEEE Transactions on Electron Devices 68 (8), 4004-4009, 2021 | 17 | 2021 |
| Ionizing radiation tolerance of stacked Si3N4-SiO2 gate insulators for power MOSFETs K Muthuseenu, HJ Barnaby, A Patadia, K Holbert, A Privat Microelectronics Reliability 104, 113554, 2020 | 14 | 2020 |
| Radiation hardened millimeter-wave receiver implemented in 90-nm, SiGe HBT technology EM Al Seragi, S Dash, K Muthuseenu, JD Cressler, HJ Barnaby, ... IEEE Transactions on Nuclear Science 69 (10), 2154-2161, 2021 | 9 | 2021 |
| Temperature dependence of bipolar junction transistor current-voltage characteristics after low dose rate irradiation A Privat, HJ Barnaby, BS Tolleson, K Muthuseenu, PC Adell Microelectronics Reliability 113, 113947, 2020 | 4 | 2020 |
| Effects of process variation on radiation-induced edge leakage currents in n-channel MOSFETs ML McLain, H Bamaby, G Schlenvogt, K Muthuseenu 2016 16th European Conference on Radiation and Its Effects on Components and …, 2016 | 3 | 2016 |
| Semiconductor device with oxide-nitride stack K Muthuseenu, S Anderson, T Ishiguro US Patent 11,362,042, 2022 | 2 | 2022 |
| Temperature Response on NPN and PNP Bipolar Junction Transistors after Total Ionizing Dose Irradiation Exposure A Privat, HJ Barnaby, BS Tolleson, K Muthuseenu, PC Adell 2019 19th European Conference on Radiation and Its Effects on Components and …, 2019 | 2 | 2019 |
| Correlating percent in-package hydrogen to hydrogen concentration in oxide after ionizing radiation exposure. P Apsangi, S Roark, H Hjalmarson, HJ Barnaby, K Muthuseenu, K Holbert Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2022 | 1 | 2022 |
| Analysis of Total Ionizing Dose Effects Using Electron Holography CT Chang, P Apsangi, K Muthuseenu, A Privat, B Kennedy, ... IEEE Transactions on Nuclear Science, 2024 | | 2024 |
| Radiation Hardened High Voltage Superjunction MOSFET K Muthuseenu, S Anderson, T Ishiguro US Patent App. 18/358,282, 2023 | | 2023 |
| Radiation hardened high voltage superjunction MOSFET K Muthuseenu, S Anderson, T Ishiguro US Patent 11,362,179, 2022 | | 2022 |
| Development of Radiation Hardened High Voltage Super-Junction Power MOSFET K Muthuseenu Arizona State University, 2020 | | 2020 |
| TCAD Model for Ag-GeSe3-Ni CBRAM Devices K Muthuseenu, EC Hylin, HJ Barnaby, P Apsangi, MN Kozicki, ... 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | | 2019 |
| Surface Potential Modelling of Hot Carrier Degradation in CMOS Technology K Muthuseenu Arizona State University, 2017 | | 2017 |
