Підписатись
Byoung Hun Lee
Byoung Hun Lee
Pohang University of Science and Technology
Підтверджена електронна адреса в postech.ac.kr - Домашня сторінка
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Посилання
Рік
Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
BH Lee, L Kang, R Nieh, WJ Qi, JC Lee
Applied Physics Letters 76 (14), 1926-1928, 2000
7922000
Charge-transfer-based Gas Sensing Using Atomic-layer MoS2
B Cho, MG Hahm, M Choi, J Yoon, AR Kim, YJ Lee, SG Park, JD Kwon, ...
Scientific reports 5 (1), 8052, 2015
6592015
Chemical Sensing of 2D Graphene/MoS2 Heterostructure device
B Cho, J Yoon, SK Lim, AR Kim, DH Kim, SG Park, JD Kwon, YJ Lee, ...
ACS applied materials & interfaces 7 (30), 16775-16780, 2015
4762015
Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application
BH Lee, L Kang, WJ Qi, R Nieh, Y Jeon, K Onishi, JC Lee
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
4011999
Negative oxygen vacancies in HfO2 as charge traps in high-k stacks
JL Gavartin, D Muñoz Ramo, AL Shluger, G Bersuker, BH Lee
Applied Physics Letters 89 (8), 2006
3792006
Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes
J Yoon, W Park, GY Bae, Y Kim, HS Jang, Y Hyun, SK Lim, YH Kahng, ...
Small 9 (19), 3295-3300, 2013
3762013
Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
L Kang, BH Lee, WJ Qi, Y Jeon, R Nieh, S Gopalan, K Onishi, JC Lee
IEEE Electron Device Letters 21 (4), 181-183, 2000
3492000
Neuromorphic hardware system for visual pattern recognition with memristor array and CMOS neuron
M Chu, B Kim, S Park, H Hwang, M Jeon, BH Lee, BG Lee
IEEE Transactions on Industrial Electronics 62 (4), 2410-2419, 2014
3332014
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscaletitanium oxide bilayer resistive switching device
K Seo, I Kim, S Jung, M Jo, S Park, J Park, J Shin, KP Biju, J Kong, K Lee, ...
Nanotechnology 22 (25), 254023, 2011
3222011
MOSCAP and MOSFET characteristics using ZrO/sub 2/gate dielectric deposited directly on Si
WJ Qi, R Nieh, BH Lee, L Kang, Y Jeon, K Onishi, T Ngai, S Banerjee, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
2601999
High-density low-power-operating DRAM device adopting 6F/sup 2/cell scheme with novel S-RCAT structure on 80nm feature size and beyond
HJ Oh, JY Kim, JH Kim, SG Park, DH Kim, SE Kim, DS Woo, YS Lee, ...
Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005
2572005
The excellent scalability of the RCAT (recess-channel-array-transistor) technology for sub-70nm DRAM feature size and beyond
JY Kim, DS Woo, HJ Oh, HJ Kim, SE Kim, BJ Park, JM Kwon, MS Shim, ...
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005.(VLSI-TSA …, 2005
2562005
Electrical and reliability characteristics of deposited directly on Si for gate dielectric application
WJ Qi, R Nieh, BH Lee, L Kang, Y Jeon, JC Lee
Applied Physics Letters 77 (20), 3269-3271, 2000
2412000
Gate stack technology for nanoscale devices
BH Lee, J Oh, HH Tseng, R Jammy, H Huff
materials today 9 (6), 32-40, 2006
2402006
RRAM-based synapse for neuromorphic system with pattern recognition function
S Park, H Kim, M Choo, J Noh, A Sheri, S Jung, K Seo, J Park, S Kim, ...
2012 international electron devices meeting, 10.2. 1-10.2. 4, 2012
2282012
A Novel Pattern Transfer Process for Bonded SOI Giga-bit DRAMs
BH Lee, GJ Bae, KW Lee, G Cha, WD Kim, SI Lee, T Barge, ...
1996 IEEE International SOI Conference Proceedings, 114-115, 1996
2191996
Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
PD Kirsch, P Sivasubramani, J Huang, CD Young, MA Quevedo-Lopez, ...
Applied Physics Letters 92 (9), 2008
2152008
Electronic system with memristive synapses for pattern recognition
S Park, M Chu, J Kim, J Noh, M Jeon, B Hun Lee, H Hwang, B Lee, B Lee
Scientific reports 5 (1), 10123, 2015
2122015
Sub‐10 nm graphene nanoribbon array field‐effect transistors fabricated by block copolymer lithography
JG Son, M Son, KJ Moon, BH Lee, JM Myoung, MS Strano, MH Ham, ...
Advanced Materials 25 (34), 4723-4728, 2013
2122013
Neuromorphic speech systems using advanced ReRAM-based synapse
S Park, A Sheri, J Kim, J Noh, J Jang, M Jeon, B Lee, BR Lee, BH Lee, ...
2013 IEEE International Electron Devices Meeting, 25.6. 1-25.6. 4, 2013
2082013
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