| Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6× 106 cm2/Vs TM Lu, DC Tsui, CH Lee, CW Liu Applied Physics Letters 94 (18), 2009 | 86 | 2009 |
| Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors TM Lu, CH Lee, SH Huang, DC Tsui, CW Liu Applied Physics Letters 99 (15), 2011 | 46 | 2011 |
| Induced superconducting pairing in integer quantum Hall edge states M Hatefipour, JJ Cuozzo, J Kanter, WM Strickland, CR Allemang, TM Lu, ... Nano Letters 22 (15), 6173-6178, 2022 | 44 | 2022 |
| Atomic precision advanced manufacturing for digital electronics DR Ward, SW Schmucker, EM Anderson, E Bussmann, L Tracy, TM Lu, ... EDFA Technical Articles 22 (1), 4-10, 2020 | 44 | 2020 |
| Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures SH Huang, TM Lu, SC Lu, CH Lee, CW Liu, DC Tsui Applied Physics Letters 101, 042111, 2012 | 44 | 2012 |
| Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry TM Lu, NC Bishop, T Pluym, J Means, PG Kotula, J Cederberg, LA Tracy, ... Applied Physics Letters 99 (4), 2011 | 43 | 2011 |
| Single and double hole quantum dots in strained Ge/SiGe quantum wells WJ Hardy, CT Harris, YH Su, Y Chuang, J Moussa, LN Maurer, JY Li, ... Nanotechnology 30 (21), 215202, 2019 | 42 | 2019 |
| Scattering mechanisms in shallow undoped Si/SiGe quantum wells D Laroche, SH Huang, E Nielsen, Y Chuang, JY Li, CW Liu, TM Lu AIP Advances 5 (10), 2015 | 40 | 2015 |
| Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures YH Su, Y Chuang, CY Liu, JY Li, TM Lu Physical Review Materials 1 (4), 044601, 2017 | 39 | 2017 |
| Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure D Laroche, SH Huang, Y Chuang, JY Li, CW Liu, TM Lu Applied Physics Letters 108 (23), 2016 | 38 | 2016 |
| Valley splitting of Si∕ Si_ {1− x} Ge_ {x} heterostructures in tilted magnetic fields K Lai, TM Lu, W Pan, DC Tsui, S Lyon, J Liu, YH Xie, M Mühlberger, ... Physical Review B 73 (16), 161301, 2006 | 38 | 2006 |
| All-optical lithography process for contacting nanometer precision donor devices DR Ward, MT Marshall, DM Campbell, TM Lu, JC Koepke, ... Applied Physics Letters 111 (19), 2017 | 32 | 2017 |
| Cyclotron mass of two-dimensional holes in (100) oriented GaAs∕ AlGaAs heterostructures TM Lu, ZF Li, DC Tsui, MJ Manfra, LN Pfeiffer, KW West Applied Physics Letters 92 (1), 2008 | 32 | 2008 |
| Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors TM Lu, W Pan, DC Tsui, CH Lee, CW Liu Physical Review B—Condensed Matter and Materials Physics 85 (12), 121307, 2012 | 31 | 2012 |
| Electron spin lifetime of a single antimony donor in silicon LA Tracy, TM Lu, NC Bishop, GA Ten Eyck, T Pluym, JR Wendt, MP Lilly, ... Applied Physics Letters 103 (14), 2013 | 29 | 2013 |
| Capacitively induced high mobility two-dimensional electron gas in undoped Si∕ Si1− xGex heterostructures with atomic-layer-deposited dielectric TM Lu, J Liu, J Kim, K Lai, DC Tsui, YH Xie Applied physics letters 90 (18), 2007 | 29 | 2007 |
| Strain effects on rashba spin‐orbit coupling of 2D hole gases in GeSn/Ge heterostructures CT Tai, PY Chiu, CY Liu, HS Kao, CT Harris, TM Lu, CT Hsieh, SW Chang, ... Advanced Materials 33 (26), 2007862, 2021 | 28 | 2021 |
| Effective g factor of low-density two-dimensional holes in a Ge quantum well TM Lu, CT Harris, SH Huang, Y Chuang, JY Li, CW Liu Applied Physics Letters 111 (10), 2017 | 28 | 2017 |
| Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening YH Su, KY Chou, Y Chuang, TM Lu, JY Li Journal of Applied Physics 125 (23), 2019 | 24 | 2019 |
| Designing nanomagnet arrays for topological nanowires in silicon LN Maurer, JK Gamble, L Tracy, S Eley, TM Lu Physical Review Applied 10 (5), 054071, 2018 | 24 | 2018 |
Prof. Jeehwan KimMITПідтверджена електронна адреса в mit.edu