Підписатись
Gilles Patriarche
Gilles Patriarche
Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris Sud, Université Paris
Підтверджена електронна адреса в c2n.upsaclay.fr
Назва
Посилання
Посилання
Рік
Why does wurtzite form in nanowires of III-V zinc blende semiconductors?
F Glas, JC Harmand, G Patriarche
Physical review letters 99 (14), 146101, 2007
9612007
Core/shell colloidal semiconductor nanoplatelets
B Mahler, B Nadal, C Bouet, G Patriarche, B Dubertret
Journal of the American Chemical Society 134 (45), 18591-18598, 2012
4682012
Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures
D Pierucci, H Henck, J Avila, A Balan, CH Naylor, G Patriarche, YJ Dappe, ...
Nano letters 16 (7), 4054-4061, 2016
3652016
Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth
JC Harmand, G Patriarche, N Péré-Laperne, MN Merat-Combes, ...
Applied Physics Letters 87 (20), 2005
3642005
Efficient exciton concentrators built from colloidal core/crown CdSe/CdS semiconductor nanoplatelets
MD Tessier, P Spinicelli, D Dupont, G Patriarche, S Ithurria, B Dubertret
Nano letters 14 (1), 207-213, 2014
3242014
Crystal phase quantum dots
N Akopian, G Patriarche, L Liu, JC Harmand, V Zwiller
Nano letters 10 (4), 1198-1201, 2010
3122010
Predictive modeling of self-catalyzed III-V nanowire growth
F Glas, MR Ramdani, G Patriarche, JC Harmand
Physical Review B—Condensed Matter and Materials Physics 88 (19), 195304, 2013
2352013
From excitonic to photonic polariton condensate in a ZnO-based microcavity
F Li, L Orosz, O Kamoun, S Bouchoule, C Brimont, P Disseix, T Guillet, ...
Physical review letters 110 (19), 196406, 2013
2312013
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
A Elbaz, D Buca, N von den Driesch, K Pantzas, G Patriarche, ...
Nature Photonics 14 (6), 375-382, 2020
2262020
Type-II CdSe/CdTe core/crown semiconductor nanoplatelets
S Pedetti, S Ithurria, H Heuclin, G Patriarche, B Dubertret
Journal of the American Chemical Society 136 (46), 16430-16438, 2014
2162014
Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
C Paranthoen, N Bertru, O Dehaese, A Le Corre, S Loualiche, B Lambert, ...
Applied Physics Letters 78 (12), 1751-1753, 2001
2112001
Infrared photodetection based on colloidal quantum-dot films with high mobility and optical absorption up to THz
E Lhuillier, M Scarafagio, P Hease, B Nadal, H Aubin, XZ Xu, N Lequeux, ...
Nano letters 16 (2), 1282-1286, 2016
2042016
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
M Tchernycheva, L Travers, G Patriarche, F Glas, JC Harmand, GE Cirlin, ...
Journal of Applied Physics 102 (9), 2007
1922007
van der Waals epitaxy of GaSe/graphene heterostructure: electronic and interfacial properties
Z Ben Aziza, H Henck, D Pierucci, MG Silly, E Lhuillier, G Patriarche, ...
ACS nano 10 (10), 9679-9686, 2016
1902016
Gradient CdSe/CdS quantum dots with room temperature biexciton unity quantum yield
M Nasilowski, P Spinicelli, G Patriarche, B Dubertret
Nano letters 15 (6), 3953-3958, 2015
1862015
Atomic step flow on a nanofacet
JC Harmand, G Patriarche, F Glas, F Panciera, I Florea, JL Maurice, ...
Physical review letters 121 (16), 166101, 2018
1842018
Arsenic pathways in self-catalyzed growth of GaAs nanowires
MR Ramdani, JC Harmand, F Glas, G Patriarche, L Travers
Crystal Growth & Design 13 (1), 91-96, 2013
1812013
Growth and characterization of InP nanowires with InAsP insertions
M Tchernycheva, GE Cirlin, G Patriarche, L Travers, V Zwiller, U Perinetti, ...
Nano letters 7 (6), 1500-1504, 2007
1802007
Sub-5 nm FIB direct patterning of nanodevices
J Gierak, A Madouri, AL Biance, E Bourhis, G Patriarche, C Ulysse, ...
Microelectronic engineering 84 (5-8), 779-783, 2007
1792007
Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization
M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ...
Nanotechnology 18 (38), 385306, 2007
1672007
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