Intrinsic and extrinsic performance limits of graphene devices on SiO2 JH Chen, C Jang, S Xiao, M Ishigami, MS Fuhrer
Nature nanotechnology 3 (4), 206-209, 2008
4209 2008 Charged-impurity scattering in graphene JH Chen, C Jang, S Adam, MS Fuhrer, ED Williams, M Ishigami
Nature physics 4 (5), 377-381, 2008
1872 2008 Defect scattering in graphene JH Chen, WG Cullen, C Jang, MS Fuhrer, ED Williams
Physical review letters 102 (23), 236805, 2009
774 2009 Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution JW Joonki Suh, Tae-Eon Park, Der-Yuh Lin, Deyi Fu, Joonsuk Park, Hee Joon ...
Nano Letters 14 (12), 6976-6982, 2014
761 2014 Tuning the effective fine structure constant in graphene: Opposing effects of dielectric screening on short-and long-range potential scattering C Jang, S Adam, JH Chen, ED Williams, S Das Sarma, MS Fuhrer
Physical review letters 101 (14), 146805, 2008
446 2008 Printed graphene circuits JH Chen, M Ishigami, C Jang, DR Hines, MS Fuhrer, ED Williams
arXiv preprint arXiv:0809.1634, 2008
382 2008 High-Fidelity Conformation of Graphene to WG Cullen, M Yamamoto, KM Burson, JH Chen, C Jang, L Li, MS Fuhrer, ...
Physical review letters 105 (21), 215504, 2010
178 2010 Diffusive charge transport in graphene on SiO2 JH Chen, C Jang, M Ishigami, S Xiao, WG Cullen, ED Williams, MS Fuhrer
Solid State Communications 149 (27-28), 1080-1086, 2009
161 2009 Spin nano–oscillator–based wireless communication HS Choi, SY Kang, SJ Cho, IY Oh, M Shin, H Park, C Jang, BC Min, ...
Scientific reports 4 (1), 5486, 2014
160 2014 Controlling the Magnetic Anisotropy of the van der Waals Ferromagnet Fe3 GeTe2 through Hole Doping SY Park, DS Kim, Y Liu, J Hwang, Y Kim, W Kim, JY Kim, C Petrovic, ...
Nano letters 20 (1), 95-100, 2019
155 2019 All-electrical measurement of interfacial Dzyaloshinskii-Moriya interaction using collective spin-wave dynamics JM Lee, C Jang, BC Min, SW Lee, KJ Lee, J Chang
Nano letters 16 (1), 62-67, 2016
126 2016 Exchange Bias in Weakly Interlayer-Coupled van der Waals Magnet Fe3 GeTe2 HK Gweon, SY Lee, HY Kwon, J Jeong, HJ Chang, KW Kim, ZQ Qiu, ...
Nano letters 21 (4), 1672-1678, 2021
71 2021 Hopping conduction in p-type MoS2 near the critical regime of the metal-insulator transition TE Park, J Suh, D Seo, J Park, DY Lin, YS Huang, HJ Choi, J Wu, C Jang, ...
Applied Physics Letters 107 (22), 2015
30 2015 Hydrodynamic assembly of conductive nanomesh of single-walled carbon nanotubes using biological glue. KY Lee, HH Byeon, C Jang, JH Choi, IS Choi, Y Jung, W Kim, J Chang, ...
Advanced Materials (Deerfield Beach, Fla.) 27 (5), 922-928, 2014
28 2014 Voltage control of magnetism in Fe3-x GeTe2 /In2 Se3 van der Waals ferromagnetic/ferroelectric heterostructures J Eom, IH Lee, JY Kee, M Cho, J Seo, H Suh, HJ Choi, Y Sim, S Chen, ...
Nature Communications 14 (1), 5605, 2023
21 2023 Electrical detection of the surface spin polarization of the candidate topological Kondo insulator J Kim, C Jang, X Wang, J Paglione, S Hong, J Lee, H Choi, D Kim
Physical Review B 99 (24), 245148, 2019
18 2019 Enhancement of electric-field-induced change of magnetic anisotropy by interface engineering of MgO magnetic tunnel junctions T Bonaedy, JW Choi, C Jang, BC Min, J Chang
Journal of Physics D: Applied Physics 48 (22), 225002, 2015
18 2015 Surface oxidation in a van der Waals ferromagnet Fe3-xGeTe2 DS Kim, JY Kee, JE Lee, Y Liu, Y Kim, N Kim, C Hwang, W Kim, ...
Current Applied Physics 30, 40-45, 2021
15 2021 Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe4 JE Lee, A Wang, S Chen, M Kwon, J Hwang, M Cho, KH Son, DS Han, ...
Nature Communications 15 (1), 3971, 2024
10 2024 Controlling the magnetic properties of layered Cr2Te3 thin films via ex-situ annealing IH Lee, YG Khim, J Eom, JY Kee, BK Choi, HJ Kim, R Kim, MY Jung, ...
Applied Surface Science 648, 159057, 2024
10 2024