| Evidence of an identical firing-activated carrier-induced defect in monocrystalline and multicrystalline silicon D Chen, M Kim, BV Stefani, BJ Hallam, MD Abbott, CE Chan, R Chen, ... Solar Energy Materials and Solar Cells 172, 293-300, 2017 | 201 | 2017 |
| Advanced hydrogenation of dislocation clusters and boron-oxygen defects in silicon solar cells BJ Hallam, PG Hamer, S Wang, L Song, N Nampalli, MD Abbott, CE Chan, ... Energy Procedia 77, 799-809, 2015 | 133 | 2015 |
| Eliminating light-induced degradation in commercial p-type Czochralski silicon solar cells B Hallam, A Herguth, P Hamer, N Nampalli, S Wilking, M Abbott, ... Applied Sciences 8 (1), 10, 2017 | 102 | 2017 |
| Hydrogen-induced degradation AC née Wenham, S Wenham, R Chen, C Chan, D Chen, B Hallam, ... 2018 IEEE 7th world conference on photovoltaic energy conversion (WCPEC)(A …, 2018 | 84 | 2018 |
| Development of thin polysilicon layers for application in monoPoly™ cells with screen-printed and fired metallization P Padhamnath, A Khanna, N Nandakumar, N Nampalli, V Shanmugam, ... Solar Energy Materials and Solar Cells 207, 110358, 2020 | 71 | 2020 |
| Evidence for the role of hydrogen in the stabilization of minority carrier lifetime in boron-doped Czochralski silicon N Nampalli, B Hallam, C Chan, M Abbott, S Wenham Applied Physics Letters 106 (17), 2015 | 67 | 2015 |
| Multiple pathways for permanent deactivation of boron-oxygen defects in p-type silicon N Nampalli, H Li, M Kim, B Stefani, S Wenham, B Hallam, M Abbott Solar Energy Materials and Solar Cells 173, 12-17, 2017 | 44 | 2017 |
| Investigations on accelerated processes for the boron–oxygen defect in p-type Czochralski silicon P Hamer, B Hallam, M Abbott, C Chan, N Nampalli, S Wenham Solar Energy Materials and Solar Cells 145, 440-446, 2016 | 44 | 2016 |
| Influence of the formation-and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model B Hallam, M Abbott, N Nampalli, P Hamer, S Wenham Journal of Applied Physics 119 (6), 2016 | 42 | 2016 |
| Influence of hydrogen on the mechanism of permanent passivation of boron–oxygen defects in p-type Czochralski silicon N Nampalli, BJ Hallam, CE Chan, MD Abbott, SR Wenham IEEE Journal of Photovoltaics 5 (6), 1580-1585, 2015 | 41 | 2015 |
| Statistical analysis of recombination properties of the boron-oxygen defect in p-type Czochralski silicon N Nampalli, TH Fung, S Wenham, B Hallam, M Abbott Frontiers in Energy 11, 4-22, 2017 | 40 | 2017 |
| Modulating the extent of fast and slow boron-oxygen related degradation in Czochralski silicon by thermal annealing: Evidence of a single defect M Kim, M Abbott, N Nampalli, S Wenham, B Stefani, B Hallam Journal of Applied Physics 121 (5), 2017 | 40 | 2017 |
| Recent insights into boron-oxygen related degradation: Evidence of a single defect B Hallam, M Kim, M Abbott, N Nampalli, T Nærland, B Stefani, S Wenham Solar Energy Materials and Solar Cells 173, 25-32, 2017 | 38 | 2017 |
| Characterization of screen printed and fire-through contacts on LPCVD based passivating contacts in monoPoly™ solar cells P Padhamnath, JK Buatis, A Khanna, N Nampalli, N Nandakumar, ... Solar Energy 202, 73-79, 2020 | 37 | 2020 |
| Implications of accelerated recombination-active defect complex formation for mitigating carrier-induced degradation in silicon BJ Hallam, MD Abbott, N Nampalli, PG Hamer, SR Wenham IEEE Journal of Photovoltaics 6 (1), 92-99, 2015 | 34 | 2015 |
| Boron-oxygen defect formation rates and activity at elevated temperatures P Hamer, N Nampalli, Z Hameiri, M Kim, D Chen, N Gorman, B Hallam, ... Energy Procedia 92, 791-800, 2016 | 30 | 2016 |
| Progress with passivation and screen-printed metallization of Boron-doped monoPoly™ layers P Padhamnath, N Nampalli, A Khanna, B Nagarajan, AG Aberle, ... Solar Energy 231, 8-26, 2022 | 29 | 2022 |
| Modelling kinetics of the boron-oxygen defect system B Hallam, M Abbott, J Bilbao, P Hamer, N Gorman, M Kim, D Chen, ... Energy Procedia 92, 42-51, 2016 | 29 | 2016 |
| Optoelectrical properties of high-performance low-pressure chemical vapor deposited phosphorus-doped polysilicon layers for passivating contact solar cells P Padhamnath, N Nampalli, N Nandakumar, JK Buatis, MJ Naval, ... Thin Solid Films 699, 137886, 2020 | 22 | 2020 |
| Impact of interstitial iron on the study of meta-stable BO defects in Czochralski silicon: Further evidence of a single defect M Kim, D Chen, M Abbott, N Nampalli, S Wenham, B Stefani, B Hallam Journal of Applied Physics 123 (16), 2018 | 19 | 2018 |
Brett HallamUniversity of New South WalesПідтверджена електронна адреса в unsw.edu.au
