| Semiconductive single molecular bilayers realized using geometrical frustration S Arai, S Inoue, T Hamai, R Kumai, T Hasegawa Advanced Materials 30 (23), 1707256, 2018 | 102 | 2018 |
| Tunneling and origin of large access resistance in layered-crystal organic transistors T Hamai, S Arai, H Minemawari, S Inoue, R Kumai, T Hasegawa Physical Review Applied 8 (5), 054011, 2017 | 69 | 2017 |
| Trap-state suppression and band-like transport in bilayer-type organic semiconductor ultrathin single crystals T Hamai, S Inoue, S Arai, T Hasegawa Physical Review Materials 4 (7), 074601, 2020 | 24 | 2020 |
| Accurate Picture of Cycling Degradation in HfO2-FeFET Based on Charge Trapping Dynamics Revealed by Fast Charge Centroid Analysis R Ichihara, Y Higashi, K Suzuki, K Takano, Y Yoshimura, T Hamai, ... 2021 IEEE International Electron Devices Meeting (IEDM), 6.3. 1-6.3. 4, 2021 | 23 | 2021 |
| Effects of tunneling-based access resistance in layered single-crystalline organic transistors T Hamai, S Arai, T Hasegawa Journal of Materials Research 33 (16), 2350-2363, 2018 | 19 | 2018 |
| Accurate picture of cycling degradation in HfO R Ichihara, Y Higashi, K Suzuki, K Takano, Y Yoshimura, T Hamai IEDM Tech. Dig, 6.3, 2021 | 15 | 2021 |
| Single-component molecular material hosting antiferromagnetic and spin-gapped Mott subsystems R Takagi, T Hamai, H Gangi, K Miyagawa, B Zhou, A Kobayashi, ... Physical Review B 95 (9), 094420, 2017 | 9 | 2017 |
| High-Endurance (>1011cycles) and Thermally-Stable Sub-100nm TiO2 Channel FeFET for Low-Power Memory Centric 3D-LSI Applications T Shiokawa, R Ichihara, T Hamai, K Sakuma, K Takahashi, K Matsuo, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 2 | 2023 |
| Storage device R Tanaka, K Suzuki, K Sakuma, Y Yoshimura, T Hamai, K Ota, Y Higashi, ... US Patent App. 18/589,342, 2024 | | 2024 |
| Semiconductor memory device, and semiconductor memory device manufacturing method K Sakuma, T Hamai, Y Kamimuta, K Suzuki US Patent App. 18/593,981, 2024 | | 2024 |
| A Vertical Channel-All-Around FeFET with Thermally Stable Oxide Semiconductor Achieving High ΔIon> 2µA/cell for 3D Stackable 4F2 High Speed Memory S Kabuyanagi, T Hamai, M Murase, T Maeda, M Saitoh, S Fujii 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | | 2024 |
| Recovery of cycling-induced degradation of interfacial SiO2 in HfO2-FeFET and its impact on retention characteristics V Schlykow, K Suzuki, Y Yoshimura, T Hamai, K Sakuma, K Matsuo, ... Japanese Journal of Applied Physics 63 (2), 02SP43, 2024 | | 2024 |
| Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics T Hamai, K Suzuki, R Ichihara, Y Higashi, Y Yoshimura, K Sakuma, K Ota, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2023 | | 2023 |
| Mechanism of HfO2-FeFET Memory Operation Revealed by Quantitative Analysis of Spontaneous Polarization and Trap Charge R Ichihara, Y Higashi, K Suzuki, H Kusai, Y Yoshimura, T Hamai, ... 2022 IEEE Silicon Nanoelectronics Workshop (SNW), 1-2, 2022 | | 2022 |
| Vertical tunneling transport and nonlinear access resistance in layered single-crystal organic transistors T Hamai, S Arai, H Minemawari, S Inoue, T Hasegawa APS March Meeting Abstracts 2018, P17. 006, 2018 | | 2018 |
| Single molecular bilayers of organic semiconductor molecules realized using geometrical frustration S Arai, S Inoue, T Hamai, R Kumai, T Hasegawa APS March Meeting Abstracts 2018, V54. 014, 2018 | | 2018 |
| Molecular Requirements for Printable Organic Semiconductors in 7-Alkyl-2-phenyl [1] benzothieno [3, 2-b][1] benzothiophenes (Ph-BTBT-Cn’s) S Inoue, H Minemawari, J Tsutsumi, T Hamai, S Arai, T Yamada, ... MRS Advances 1 (38), 2653-2658, 2016 | | 2016 |
| Interlayer Transport Measurement of Organic Ultrathin Film Using Microfluidic Channel Technology T Hamai, Y Okamoto | | |
