Theo dõi
Mahendra DC
Mahendra DC
Intel Corporation, Stanford University, University of Minnesota
Email được xác minh tại intel.com
Tiêu đề
Trích dẫn bởi
Trích dẫn bởi
Năm
Room-temperature high spin–orbit torque due to quantum confinement in sputtered BixSe(1–x) films
M Dc, R Grassi, JY Chen, M Jamali, D Reifsnyder Hickey, D Zhang, ...
Nature materials 17 (9), 800-807, 2018
4792018
Fast magnetoelectric device based on current-driven domain wall propagation
JP Wang, M Jamali, SS Sapatnekar, MG Mankalale, Z Liang, AK Smith, ...
US Patent 10,217,522, 2019
722019
Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3
M Dc, DF Shao, VDH Hou, A Vailionis, P Quarterman, A Habiboglu, ...
Nature Materials 22 (5), 591-598, 2023
572023
Observation of high spin-to-charge conversion by sputtered bismuth selenide thin films at room temperature
M Dc, JY Chen, T Peterson, P Sahu, B Ma, N Mousavi, R Harjani, ...
Nano letters 19 (8), 4836-4844, 2019
542019
Tunable charge to spin conversion in strontium iridate thin films
AS Everhardt, M Dc, X Huang, S Sayed, TA Gosavi, Y Tang, CC Lin, ...
Physical Review Materials 3 (5), 051201, 2019
532019
Using spin-Hall MTJs to build an energy-efficient in-memory computation platform
M Zabihi, Z Zhao, DC Mahendra, ZI Chowdhury, S Resch, T Peterson, ...
20th International Symposium on Quality Electronic Design (ISQED), 52-57, 2019
452019
Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions
JY Chen, M Dc, D Zhang, Z Zhao, M Li, JP Wang
Applied Physics Letters 111 (1), 2017
452017
Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet
M Dc, T Liu, JY Chen, T Peterson, P Sahu, H Li, Z Zhao, M Wu, JP Wang
Applied Physics Letters 114 (10), 2019
412019
Demonstration of Ru as the 4th ferromagnetic element at room temperature
P Quarterman, C Sun, J Garcia-Barriocanal, M Dc, Y Lv, S Manipatruni, ...
Nature communications 9 (1), 2058, 2018
402018
Large and robust charge-to-spin conversion in sputtered conductive WTex with disorder
X Li, P Li, VDH Hou, DC Mahendra, CH Nien, F Xue, D Yi, C Bi, CM Lee, ...
Matter 4 (5), 1639-1653, 2021
332021
Spin pumping and large field-like torque at room temperature in sputtered amorphous WTe2− x films
Y Fan, H Li, M Dc, T Peterson, J Held, P Sahu, J Chen, D Zhang, ...
APL Materials 8 (4), 2020
332020
Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe (1-x) topological insulator material
M DC, M Jamali, JY Chen, DR Hickey, D Zhang, Z Zhao, H Li, ...
arXiv preprint arXiv:1703.03822, 2017
292017
Materials requirements of high-speed and low-power spin-orbit-torque magnetic random-access memory
X Li, SJ Lin, M Dc, YC Liao, C Yao, A Naeemi, W Tsai, SX Wang
IEEE Journal of the Electron Devices Society 8, 674-680, 2020
272020
Charge-spin interconversion in epitaxial Pt probed by spin-orbit torques in a magnetic insulator
P Li, LJ Riddiford, C Bi, JJ Wisser, XQ Sun, A Vailionis, MJ Veit, A Altman, ...
Physical Review Materials 5 (6), 064404, 2021
192021
Large fieldlike torque in amorphous originated from the intrinsic spin Hall effect
TJ Peterson, M Dc, Y Fan, J Chen, D Zhang, H Li, P Swatek, ...
Physical Review Materials 5 (4), 045003, 2021
152021
Planar Hall effect based characterization of spin orbital torques in Ta/CoFeB/MgO structures
M Jamali, Z Zhao, M DC, D Zhang, H Li, AK Smith, JP Wang
Journal of Applied Physics 119 (13), 2016
152016
Spin-orbit-torque material exploration for maximum array-level read/write performance
YC Liao, P Kumar, DC Mahendra, X Li, D Zhang, JP Wang, SX Wang, ...
2020 IEEE International Electron Devices Meeting (IEDM), 13.6. 1-13.6. 4, 2020
142020
Experimental demonstration of integrated magneto-electric and spin-orbit building blocks implementing energy-efficient logic
CC Lin, T Gosavi, D Nikonov, YL Huang, B Prasad, WY Choi, I Groen, ...
2019 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2019
132019
A fast magnetoelectric device based on current-driven domain wall propagation
MG Mankalale, Z Liang, AK Smith, DC Mahendra, M Jamali, JP Wang, ...
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
112016
Low-voltage and high-speed switching of a magnetoelectric element for energy efficient compute
P Debashis, JJ Plombon, CC Lin, YC Liao, H Li, DE Nikonov, D Adams, ...
2022 International Electron Devices Meeting (IEDM), 36.4. 1-36.4. 4, 2022
102022
Hệ thống không thể thực hiện thao tác ngay bây giờ. Hãy thử lại sau.
Bài viết 1–20