| Proposal and achievement of novel structure InN∕ GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix A Yoshikawa, SB Che, W Yamaguchi, H Saito, XQ Wang, Y Ishitani, ... Applied Physics Letters 90 (7), 2007 | 159 | 2007 |
| Growth and characterization of AlInN ternary alloys in whole composition range and fabrication of InN/AlInN multiple quantum wells by RF molecular beam epitaxy W Terashima, SB Che, Y Ishitani, A Yoshikawa Japanese journal of applied physics 45 (6L), L539, 2006 | 134 | 2006 |
| Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy X Wang, SB Che, Y Ishitani, A Yoshikawa Journal of applied physics 99 (7), 2006 | 94 | 2006 |
| Growth and properties of Mg-doped In-polar InN films X Wang, SB Che, Y Ishitani, A Yoshikawa Applied physics letters 90 (20), 2007 | 89 | 2007 |
| Threading dislocations in In-polar InN films and their effects on surface morphology and electrical properties X Wang, SB Che, Y Ishitani, A Yoshikawa Applied physics letters 90 (15), 2007 | 89 | 2007 |
| Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy X Wang, Y Tomita, OH Roh, M Ohsugi, SB Che, Y Ishitani, A Yoshikawa Applied Physics Letters 86 (1), 2005 | 89 | 2005 |
| Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy A Yoshikawa, N Hashimoto, N Kikukawa, SB Che, Y Ishitani Applied Physics Letters 86 (15), 2005 | 85 | 2005 |
| Systematic study on p-type doping control of InN with different Mg concentrations in both In and N polarities X Wang, SB Che, Y Ishitani, A Yoshikawa Applied Physics Letters 91 (24), 2007 | 83 | 2007 |
| Hole mobility in Mg-doped p-type InN films X Wang, SB Che, Y Ishitani, A Yoshikawa Applied Physics Letters 92 (13), 2008 | 80 | 2008 |
| Step-flow growth of In-polar InN by molecular beam epitaxy X Wang, SB Che, Y Ishitani, A Yoshikawa Japanese journal of applied physics 45 (7L), L730, 2006 | 80 | 2006 |
| Experimental determination of strain-free Raman frequencies and deformation potentials for the E2 high and A1 (LO) modes in hexagonal InN X Wang, SB Che, Y Ishitani, A Yoshikawa Applied physics letters 89 (17), 2006 | 78 | 2006 |
| Recent advances and challenges for successful p‐type control of InN films with Mg acceptor doping by molecular beam epitaxy A Yoshikawa, X Wang, Y Ishitani, A Uedono physica status solidi (a) 207 (5), 1011-1023, 2010 | 67 | 2010 |
| Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix A Yoshikawa, SB Che, N Hashimoto, H Saito, Y Ishitani, XQ Wang Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 65 | 2008 |
| Bowing of the band gap pressure coefficient in InxGa1− xN alloys G Franssen, I Gorczyca, T Suski, A Kamińska, J Pereiro, E Muñoz, ... Journal of Applied Physics 103 (3), 2008 | 65 | 2008 |
| Fabrication of asymmetric GaN/InN/InGaN/GaN quantum-well light emitting diodes for reducing the quantum-confined stark effect in the blue-green region S Che, A Yuki, H Watanabe, Y Ishitani, A Yoshikawa Applied physics express 2 (2), 021001, 2009 | 53 | 2009 |
| Polarity inversion in high Mg-doped In-polar InN epitaxial layers X Wang, SB Che, Y Ishitani, A Yoshikawa, H Sasaki, T Shinagawa, ... Applied Physics Letters 91 (8), 2007 | 47 | 2007 |
| Molecular beam epitaxy growth of single-domain and high-quality ZnO layers on nitrided (0001) sapphire surface X Wang, H Iwaki, M Murakami, X Du, Y Ishitani, A Yoshikawa Japanese journal of applied physics 42 (2A), L99, 2003 | 47 | 2003 |
| Effects of sapphire (0001) surface modification by gallium pre-exposure on the growth of high-quality epitaxial ZnO film X Du, M Murakami, H Iwaki, Y Ishitani, A Yoshikawa Japanese journal of applied physics 41 (10A), L1043, 2002 | 43 | 2002 |
| Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs A Yoshikawa, S Che, Y Ishitani, X Wang Journal of crystal growth 311 (7), 2073-2079, 2009 | 42 | 2009 |
| Fine-structure N-polarity InN∕ InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy SB Che, W Terashima, Y Ishitani, A Yoshikawa, T Matsuda, H Ishii, ... Applied Physics Letters 86 (26), 2005 | 37 | 2005 |
