| 2D semiconductors for specific electronic applications: from device to system X Huang, C Liu, P Zhou npj 2D Materials and Applications 6 (1), 51, 2022 | 120 | 2022 |
| A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current Z Tang, C Liu, X Huang, S Zeng, L Liu, J Li, YG Jiang, DW Zhang, P Zhou Nano letters 21 (4), 1758-1764, 2021 | 112 | 2021 |
| In-memory computing to break the memory wall X Huang, C Liu, YG Jiang, P Zhou Chinese Physics B 29 (7), 078504, 2020 | 58 | 2020 |
| An ultrafast bipolar flash memory for self-activated in-memory computing X Huang, C Liu, Z Tang, S Zeng, S Wang, P Zhou Nature nanotechnology 18 (5), 486-492, 2023 | 52 | 2023 |
| An application-specific image processing array based on WSe2 transistors with electrically switchable logic functions S Zeng, C Liu, X Huang, Z Tang, L Liu, P Zhou Nature Communications 13 (1), 56, 2022 | 42 | 2022 |
| Ultrathin multibridge channel transistor enabled by van der Waals assembly X Huang, C Liu, S Zeng, Z Tang, S Wang, X Chen, DW Zhang, P Zhou Advanced Materials 33 (37), 2102201, 2021 | 33 | 2021 |
| An ultrasmall organic synapse for neuromorphic computing S Liu, J Zeng, Z Wu, H Hu, A Xu, X Huang, W Chen, Q Chen, Z Yu, Y Zhao, ... Nature Communications 14 (1), 7655, 2023 | 32 | 2023 |
| Neuromorphic engineering for hardware computational acceleration and biomimetic perception motion integration S Wang, X Chen, X Huang, D Wei Zhang, P Zhou Advanced Intelligent Systems 2 (11), 2000124, 2020 | 28 | 2020 |
| Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS2-channel transistor L Liu, Y Sun, X Huang, C Liu, Z Tang, S Zeng, DW Zhang, S Deng, P Zhou Materials Futures 1 (2), 025301, 2022 | 17 | 2022 |
| High drive and low leakage current MBC FET with channel thickness 1.2 nm/0.6 nm X Huang, C Liu, Z Tang, S Zeng, L Liu, X Hou, H Chen, J Li, YG Jiang, ... 2020 IEEE International Electron Devices Meeting (IEDM), 12.1. 1-12.1. 4, 2020 | 16 | 2020 |
| 2022 roadmap on neuromorphic devices and applications research in China Q Wan, C Wan, H Wu, Y Yang, X Huang, P Zhou, L Chen, TY Wang, Y Li, ... Neuromorphic Computing and Engineering 2 (4), 042501, 2022 | 14 | 2022 |
| Neuromorphic electro-stimulation based on atomically thin semiconductor for damage-free inflammation inhibition R Bao, S Wang, X Liu, K Tu, J Liu, X Huang, C Liu, P Zhou, S Liu Nature Communications 15 (1), 1327, 2024 | 11 | 2024 |
| Tunable Current Regulative Diode Based on Van der Waals Stacked MoS2/WSe2 Heterojunction–Channel Field‐Effect Transistor L Liu, C Liu, X Huang, S Zeng, ZW Tang, DW Zhang, P Zhou Advanced Electronic Materials 8 (4), 2100869, 2022 | 9 | 2022 |
| Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors Z Liu, Q Zhang, X Huang, C Liu, P Zhou Science China Information Sciences 67 (6), 160402, 2024 | 4 | 2024 |
| Versatile logic and nonvolatile memory based on a van der Waals heterojunction Y Sun, S Wang, S Zeng, X Huang, P Zhou ACS Applied Electronic Materials 3 (7), 3079-3084, 2021 | 4 | 2021 |
| Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering Z Tang, C Liu, S Zeng, X Huang, L Liu, J Li, Y Jiang, DW Zhang, P Zhou Journal of Semiconductors 42 (2), 024101, 2021 | 4 | 2021 |
| A quantum corrected compact model of experimentally fabricated GAA 2-D MBCFETs Y Liu, X Huang, K Luo, Z Wu, Y Liu, C Liu, G Hu, P Zhou, Y Lu IEEE Transactions on Electron Devices 70 (3), 891-898, 2023 | 1 | 2023 |
