Thousands of conductance levels in memristors integrated on CMOS M Rao, H Tang, J Wu, W Song, M Zhang, W Yin, Y Zhuo, F Kiani, B Chen, ...
Nature 615 (7954), 823-829, 2023
268 2023 Sub-10 nm two-dimensional transistors: Theory and experiment R Quhe, L Xu, S Liu, C Yang, Y Wang, H Li, J Yang, Q Li, B Shi, Y Li, ...
Physics Reports 938, 1-72, 2021
143 2021 Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment Y Wang, S Liu, Q Li, R Quhe, C Yang, Y Guo, X Zhang, Y Pan, J Li, ...
Reports on Progress in Physics 84 (5), 056501, 2021
142 2021 Schottky Contact in Monolayer WS2 Field‐Effect Transistors H Tang, B Shi, Y Pan, J Li, X Zhang, J Yan, S Liu, J Yang, L Xu, J Yang, ...
Advanced Theory and Simulations 2 (5), 1900001, 2019
60 2019 Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors Y Pan, J Gu, H Tang, X Zhang, J Li, B Shi, J Yang, H Zhang, J Yan, S Liu, ...
ACS Applied Nano Materials 2 (8), 4717-4726, 2019
43 2019 High accuracy neural network interatomic potential for NiTi shape memory alloy H Tang, Y Zhang, QJ Li, H Xu, Y Wang, Y Wang, J Li
Acta Materialia 238, 118217, 2022
26 2022 Planar Direction‐Dependent Interfacial Properties in Monolayer In2 Se3 –Metal Contacts C Yang, X Zhang, X Sun, H Zhang, H Tang, B Shi, H Pang, L Xu, S Liu, ...
physica status solidi (b) 257 (1), 1900198, 2020
25 2020 Geometric origins of topological insulation in twisted layered semiconductors H Tang, S Carr, E Kaxiras
Physical Review B 104, 155415, 2021
23 2021 Layer-Dependent Photoabsorption and Photovoltaic Effects in Two-Dimensional X = H Tang, B Shi, Y Wang, C Yang, S Liu, Y Li, R Quhe, J Lu
Physical Review Applied 15 (6), 064037, 2021
23 2021 First-principles calculation of the temperature-dependent transition energies in spin defects H Tang, AR Barr, G Wang, P Cappellaro, J Li
The Journal of Physical Chemistry Letters 14 (13), 3266-3273, 2023
21 2023 Characterizing temperature and strain variations with qubit ensembles for their robust coherence protection G Wang, AR Barr, H Tang, M Chen, C Li, H Xu, A Stasiuk, J Li, ...
Physical Review Letters 131 (4), 043602, 2023
20 2023 Device performance and strain effect of sub-5 nm monolayer InP transistors L Xu, R Quhe, Q Li, S Liu, J Yang, C Yang, B Shi, H Tang, Y Li, X Sun, ...
Journal of Materials Chemistry C 10 (6), 2223-2235, 2022
20 2022 Communication-efficient quantum algorithm for distributed machine learning H Tang, B Li, G Wang, H Xu, C Li, A Barr, P Cappellaro, J Li
Physical Review Letters 130 (15), 150602, 2023
12 2023 Bilayer tellurene–metal interfaces H Pang, J Yan, J Yang, S Liu, Y Pan, X Zhang, B Shi, H Tang, J Yang, ...
Journal of Semiconductors 40 (6), 062003, 2019
10 2019 Solid-state H Xu, H Tang, G Wang, C Li, B Li, P Cappellaro, J Li
Physical Review A 108 (2), L021502, 2023
9 2023 Manipulating solid-state spin concentration through charge transport G Wang, C Li, H Tang, B Li, F Madonini, FF Alsallom, WK Calvin Sun, ...
Proceedings of the National Academy of Sciences 120 (32), e2305621120, 2023
8 2023 Phase transition and topological transistors based on monolayer Na 3 Bi nanoribbons B Shi, H Tang, Z Song, J Li, L Xu, S Liu, J Yang, X Sun, R Quhe, J Yang, ...
Nanoscale 13 (35), 15048-15057, 2021
7 2021 Reinforcement Learning‐Guided Long‐Timescale Simulation of Hydrogen Transport in Metals H Tang, B Li, Y Song, M Liu, H Xu, G Wang, H Chung, J Li
Advanced Science 11 (5), 2304122, 2024
6 2024 Two-photon interface of nuclear spins based on the optonuclear quadrupolar effect H Xu, C Li, G Wang, H Wang, H Tang, AR Barr, P Cappellaro, J Li
Physical Review X 13 (1), 011017, 2023
6 2023 Blind quantum machine learning with quantum bipartite correlator C Li, B Li, O Amer, R Shaydulin, S Chakrabarti, G Wang, H Xu, H Tang, ...
Physical Review Letters 133 (12), 120602, 2024
5 2024 
Ju LiProfessor of Nuclear Science and Engineering and Materials Science and Engineering, MIT, USAEmail được xác minh tại mit.edu