| Diamond/γ-alumina band offset determination by XPS J Cañas, G Alba, D Leinen, F Lloret, M Gutierrez, D Eon, J Pernot, ... Applied Surface Science 535, 146301, 2021 | 30 | 2021 |
| Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS J Cañas, JC Piñero, F Lloret, M Gutierrez, T Pham, J Pernot, D Araujo Applied Surface Science 461, 93-97, 2018 | 24 | 2018 |
| Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing F Agulló-Rueda, N Gordillo, MD Ynsa, A Maira, J Cañas, MA Ramos Carbon 123, 334-343, 2017 | 20 | 2017 |
| H-Terminated diamond surface band bending characterization by angle-resolved XPS G Alba, D Eon, MP Villar, R Alcántara, G Chicot, J Cañas, J Letellier, ... Surfaces 3 (1), 61-71, 2020 | 18 | 2020 |
| Normally-OFF diamond reverse blocking MESFET J Cañas, AC Pakpour-Tabrizi, T Trajkovic, F Udrea, D Eon, E Gheeraert, ... IEEE Transactions on Electron Devices 68 (12), 6279-6285, 2021 | 11 | 2021 |
| Non-volatile tuning of normally-on and off states of deep depletion ZrO2/O-terminated high voltage diamond MOSFET B Soto, M Couret, J Cañas, A Castelan, N Rouger, D Araujo, MP Villar, ... Diamond and Related Materials 134, 109802, 2023 | 10 | 2023 |
| Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs B Soto, J Cañas, MP Villar, D Araujo, J Pernot Diamond and Related Materials 121, 108745, 2022 | 10 | 2022 |
| Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs M Gutiérrez, F Lloret, TT Pham, J Cañas, DF Reyes, D Eon, J Pernot, ... Nanomaterials 8 (8), 584, 2018 | 7 | 2018 |
| High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors J Cañas, C Dussarrat, T Teramoto, C Masante, M Gutierrez, E Gheeraert Applied Physics Letters 121 (7), 2022 | 6 | 2022 |
| AlGaN/AlN Stranski–Krastanov quantum dots for highly efficient electron beam-pumped emitters: the role of miniaturization and composition to attain far UV-C emission J Cañas, A Harikumar, ST Purcell, N Rochat, A Grenier, A Jannaud, ... ACS photonics 10 (12), 4225-4235, 2023 | 5 | 2023 |
| High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry J Cañas, DF Reyes, A Zakhtser, C Dussarrat, T Teramoto, M Gutiérrez, ... Nanomaterials 12 (23), 4125, 2022 | 5 | 2022 |
| Effect of Extended Defects on AlGaN Quantum Dots for Electron-Pumped Ultraviolet Emitters J Cañas, N Rochat, A Grenier, A Jannaud, Z Saghi, JL Rouviere, ... ACS nano 18 (18), 11886-11897, 2024 | 4 | 2024 |
| Barrier height requirements for leakage suppression in diamond power Schottky diodes J Cañas, D Eon Diamond and Related Materials 136, 110038, 2023 | 4 | 2023 |
| Experimental extraction of the bandgap for al4sic4 S Forster, J Cañas, F Lloret, M Gutiérrez, D Araujo, K Kalna, ... Proceedings of UK Semiconductor, 2018 | 4 | 2018 |
| General optimization of breakdown voltage and resistivity on power components in terms of doping level and thickness D Eon, J Cañas Diamond and Related Materials 136, 110032, 2023 | 3 | 2023 |
| Schottky contact based diamond power devices: tuning the interfacial properties to demonstrate diamond unleashed performance J Cañas Universidad de Cádiz, 2022 | | 2022 |