Nuclear spin quantum memory in silicon carbide B Tissot, M Trupke, P Koller, T Astner, G Burkard
Physical Review Research 4 (3), 033107, 2022
22 2022 Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide P Cilibrizzi, MJ Arshad, B Tissot, NT Son, IG Ivanov, T Astner, P Koller, ...
Nature Communications 14, 8448, 2023
20 2023 Hyperfine structure of transition metal defects in SiC B Tissot, G Burkard
Physical Review B 104 (6), 064102, 2021
20 2021 Spin structure and resonant driving of spin- defects in SiC B Tissot, G Burkard
Physical Review B 103 (6), 064106, 2021
15 2021 Strain engineering for transition-metal defects in SiC B Tissot, P Udvarhelyi, A Gali, G Burkard
Physical Review B 109 (5), 054111, 2024
9 2024 Efficient high-fidelity flying qubit shaping B Tissot, G Burkard
Physical Review Research 6 (1), 013150, 2024
7 2024 Extended spin relaxation times of optically addressed vanadium defects in silicon carbide at telecommunication frequencies J Ahn, C Wicker, N Bitner, MT Solomon, B Tissot, G Burkard, AM Dibos, ...
Physical Review Applied 22 (4), 044078, 2024
3 * 2024 Quantum communication networks with defects in silicon carbide S Ecker, M Fink, T Scheidl, P Sohr, R Ursin, MJ Arshad, C Bonato, ...
arXiv preprint arXiv:2403.03284, 2024
3 2024 Reservoir engineering for classical nonlinear fields B Tissot, H Ribeiro, F Marquardt
Physical Review Research 6 (2), 023015, 2024
1 2024 Strain-enabled control of the vanadium qudit in silicon carbide P Koller, T Astner, B Tissot, G Burkard, M Trupke
arXiv preprint arXiv:2501.05896, 2025
2025 Entanglement generation using single-photon pulse reflection in realistic networks F Omlor, B Tissot, G Burkard
Physical Review A 111 (1), 012612, 2025
2025 Optical Spin-Photon Interfaces with a Focus on Transition Metal Defects in Silicon Carbide B Tissot
2023