| Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors M Si, Y Hu, Z Lin, X Sun, A Charnas, D Zheng, X Lyu, H Wang, K Cho, ... Nano Letters 21 (1), 500-506, 2020 | 167 | 2020 |
| Non-epitaxial single-crystal 2D material growth by geometric confinement KS Kim, D Lee, CS Chang, S Seo, Y Hu, S Cha, H Kim, J Shin, JH Lee, ... Nature 614 (7946), 88-94, 2023 | 131 | 2023 |
| First principles calculations of intrinsic mobilities in tin-based oxide semiconductors SnO, SnO2, and Ta2SnO6 Y Hu, J Hwang, Y Lee, P Conlin, DG Schlom, S Datta, K Cho Journal of Applied Physics 126 (18), 2019 | 71 | 2019 |
| Study of the heavily p-type doping of cubic GaN with Mg CA Hernández-Gutiérrez, YL Casallas-Moreno, VT Rangel-Kuoppa, ... Scientific Reports 10 (1), 16858, 2020 | 47 | 2020 |
| First principles design of high hole mobility p-type Sn–O–X ternary oxides: valence orbital engineering of Sn2+ in Sn2+–O–X by selection of appropriate elements X Y Hu, X Yao, DG Schlom, S Datta, K Cho Chemistry of Materials 33 (1), 212-225, 2020 | 41 | 2020 |
| Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths Y Lee, Y Hu, X Lang, D Kim, K Li, Y Ping, KMC Fu, K Cho Nature Communications 13 (1), 7501, 2022 | 32 | 2022 |
| Origin of Indium Diffusion in High-k Oxide HfO2 Y Hu, C Wang, H Dong, RM Wallace, K Cho, WH Wang, W Wang ACS Applied Materials & Interfaces 8 (11), 7595-7600, 2016 | 32 | 2016 |
| Atomically thin indium-tin-oxide transistors enabled by atomic layer deposition Z Zhang, Y Hu, Z Lin, M Si, A Charnas, K Cho, DY Peide IEEE Transactions on Electron Devices 69 (1), 231-236, 2021 | 29 | 2021 |
| Nanometer-thick oxide semiconductor transistor with ultra-high drain current Z Lin, M Si, V Askarpour, C Niu, A Charnas, Z Shang, Y Zhang, Y Hu, ... ACS nano 16 (12), 21536-21545, 2022 | 24 | 2022 |
| Growth of Ta2SnO6 Films, a Candidate Wide-Band-Gap p-Type Oxide M Barone, M Foody, Y Hu, J Sun, B Frye, SS Perera, B Subedi, H Paik, ... The Journal of Physical Chemistry C 126 (7), 3764-3775, 2022 | 24 | 2022 |
| Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric Y Hu, H Jiang, KM Lau, Q Li Semiconductor Science and Technology 33 (4), 045004, 2018 | 21 | 2018 |
| Interlayer engineering of band gap and hole mobility in p-type oxide SnO Y Hu, D Schlom, S Datta, K Cho ACS Applied Materials & Interfaces 14 (22), 25670-25679, 2022 | 20 | 2022 |
| Electronic structure and optical properties of InSe/α-AsP van der Waals heterostructure from DFT calculations S Wang, Y Hu, Y Wei, W Li, NT Kaner, Y Jiang, J Yang, X Li Physica E: Low-dimensional Systems and Nanostructures 130, 114674, 2021 | 18 | 2021 |
| Origins of Fermi level pinning for Ni and Ag metal contacts on tungsten dichalcogenides X Wang, Y Hu, SY Kim, R Addou, K Cho, RM Wallace ACS nano 17 (20), 20353-20365, 2023 | 16 | 2023 |
| Blue luminescence origin and Mg acceptor saturation in highly doped zinc-blende GaN with Mg Y Hu, CA Hernández-Gutiérrez, HI Solís-Cisneros, G Santana, ... Journal of Alloys and Compounds 897, 163133, 2022 | 14 | 2022 |
| Growth behavior and stress distribution of bulk GaN grown by Na-flux with HVPE GaN seed under near-thermodynamic equilibrium Z Si, Z Liu, Y Hu, S Zheng, X Dong, X Gao, J Wang, K Xu Applied Surface Science 578, 152073, 2022 | 12 | 2022 |
| Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors Y Hu, P San Yip, CW Tang, KM Lau, Q Li Semiconductor Science and Technology 33 (4), 045005, 2018 | 9 | 2018 |
| Theoretical and Empirical Insight into Dopant, Mobility and Defect States in W Doped Amorphous In2 O3 for High-Performance Enhancement Mode BEOL … Y Hu, H Ye, KA Aabrar, SG Kirtania, W Chakraborty, S Datta, K Cho 2022 International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2022 | 8 | 2022 |
| Ilmenite and amorphous SnTiO 3 as p-type oxide semiconductors Y Hu, D Schlom, S Datta, K Cho Journal of Materials Chemistry C 11 (14), 4830-4836, 2023 | 6 | 2023 |
| theoretical and computational analysis of a wurtzite-AlGaN DUV-LED to mitigate quantum-confined Stark effect with a zincblende comparison considering Mg-and Be-doping HI Solís-Cisneros, Y Hu, JL Camas-Anzueto, R Grajales-Coutiño, ... Nanomaterials 12 (23), 4347, 2022 | 6 | 2022 |
Suman DattaJoseph M. Pettit Chair ProfessorEmail được xác minh tại gatech.edu
