Theo dõi
Dr. Yogesh Pratap
Tiêu đề
Trích dẫn bởi
Trích dẫn bởi
Năm
Performance evaluation and reliability issues of junctionless CSG MOSFET for RFIC design
Y Pratap, S Haldar, RS Gupta, M Gupta
IEEE Transactions on Device and Materials Reliability 14 (1), 418-425, 2014
942014
Analytical modeling of gate-all-around junctionless transistor based biosensors for detection of neutral biomolecule species
Y Pratap, M Kumar, S Kabra, S Haldar, RS Gupta, M Gupta
Journal of Computational Electronics 17, 288-296, 2018
792018
Modeling and simulation of AlGaN/GaN MOS-HEMT for biosensor applications
P Pal, Y Pratap, M Gupta, S Kabra
IEEE Sensors Journal 19 (2), 587-593, 2018
762018
An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering
Y Pratap, P Ghosh, S Haldar, RS Gupta, M Gupta
Microelectronics Journal 45 (4), 408-415, 2014
532014
Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET
A Sharma, A Jain, Y Pratap, RS Gupta
Solid-State Electronics 123, 26-32, 2016
452016
Performance analysis and optimization of under-gate dielectric modulated Junctionless FinFET biosensor
HD Sehgal, Y Pratap, M Gupta, S Kabra
IEEE Sensors Journal 21 (17), 18897-18904, 2021
262021
Performance Investigation of Novel Pt/Pd-SiO2 Junctionless FinFET as a High Sensitive Hydrogen Gas Sensor for Industrial Applications
HD Sehgal, Y Pratap, M Gupta, S Kabra
IEEE Sensors Journal 21 (12), 13356-13363, 2021
262021
Localized charge-dependent threshold voltage analysis of gate-material-engineered junctionless nanowire transistor
Y Pratap, S Haldar, RS Gupta, M Gupta
IEEE Transactions on Electron Devices 62 (8), 2598-2605, 2015
252015
Open gate AlGaN/GaN HEMT biosensor: Sensitivity analysis and optimization
P Pal, Y Pratap, M Gupta, S Kabra
Superlattices and Microstructures 156, 106968, 2021
232021
Gate-material-engineered junctionless nanowire transistor (JNT) with vacuum gate dielectric for enhanced hot-carrier reliability
Y Pratap, S Haldar, RS Gupta, M Gupta
IEEE Transactions on Device and Materials Reliability 16 (3), 360-369, 2016
222016
Impact of different localized trap charge profiles on the short channel double gate junctionless nanowire transistor based inverter and ring oscillator circuit
N Garg, Y Pratap, M Gupta, S Kabra
AEU-International Journal of Electronics and Communications 108, 251-261, 2019
172019
Sensitivity investigation of gate-all-around junctionless transistor for hydrogen gas detection
Y Pratap, M Kumar, M Gupta, S Haldar, RS Gupta, SS Deswal
2016 IEEE International Nanoelectronics Conference (INEC), 1-2, 2016
172016
Reliability assessment of GaAs/Al₂O₃ junctionless FinFET in the presence of interfacial layer defects and radiations
N Garg, Y Pratap, M Gupta, S Kabra
IEEE Transactions on Device and Materials Reliability 20 (2), 452-458, 2020
162020
Detection of breast cancer cell-MDA-MB-231 by measuring conductivity of Schottky Source/Drain GaN FinFET
HD Sehgal, Y Pratap, S Kabra
IEEE Sensors Journal 22 (6), 6108-6115, 2022
142022
Comparative Analysis of Junctionless FinFET and Inverted Mode FinFET as Phosphine (PH3) Gas Sensor
HD Sehgal, Y Pratap, M Gupta, S Kabra, P Pal
2020 5th International Conference on Devices, Circuits and Systems (ICDCS …, 2020
142020
Physics-based drain current modeling of gate-all-around junctionless nanowire twin-gate transistor (JN-TGT) for digital applications
Y Pratap, R Gautam, S Haldar, RS Gupta, M Gupta
Journal of Computational Electronics 15, 492-501, 2016
142016
Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach
M Kumar, Y Pratap, S Haldar, M Gupta, RS Gupta
Journal of Semiconductors 38 (12), 124002, 2017
132017
Analytical modeling and simulation of AlGaN/GaN MOS-HEMT for high sensitive pH sensor
P Pal, Y Pratap, M Gupta, S Kabra
IEEE Sensors Journal 21 (12), 12998-13005, 2021
122021
Small-signal analysis of double-channel AlGaN/GaN HEMT and MOSHEMT with undoped barrier for microwave applications
P Pal, Y Pratap, S Kabra
Journal of Electronic Materials 51 (7), 4095-4103, 2022
92022
Performance analysis of ScAlN/GaN high electron mobility transistor (HEMT) for biosensing application
P Pal, Y Pratap, M Gupta, S Kabra, HD Sehgal
2020 5th International Conference on Devices, Circuits and Systems (ICDCS …, 2020
92020
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