Disease detection and management via single nanopore-based sensors JE Reiner, A Balijepalli, JWF Robertson, J Campbell, J Suehle, ...
Chemical reviews 112 (12), 6431-6451, 2012
261 2012 Atomic-scale defects involved in the negative-bias temperature instability JP Campbell, PM Lenahan, CJ Cochrane, AT Krishnan, S Krishnan
IEEE Transactions on Device and Materials Reliability 7 (4), 540-557, 2007
137 2007 Density of states of JP Campbell, PM Lenahan
Applied physics letters 80 (11), 1945-1947, 2002
119 2002 Random telegraph noise in highly scaled nMOSFETs JP Campbell, J Qin, KP Cheung, LC Yu, JS Suehle, A Oates, K Sheng
2009 IEEE International Reliability Physics Symposium, 382-388, 2009
111 2009 Electron spin resonance spectrometer and method for using same JP Campbell, KP Cheung, JT Ryan, PM Lenahan
US Patent 9,507,004, 2016
101 2016 A simple series resistance extraction methodology for advanced CMOS devices JP Campbell, KP Cheung, JS Suehle, A Oates
IEEE electron device letters 32 (8), 1047-1049, 2011
96 2011 Modeling early breakdown failures of gate oxide in SiC power MOSFETs Z Chbili, A Matsuda, J Chbili, JT Ryan, JP Campbell, M Lahbabi, ...
IEEE Transactions on Electron Devices 63 (9), 3605-3613, 2016
95 2016 Observations of NBTI-induced atomic-scale defects JP Campbell, PM Lenahan, AT Krishnan, S Krishnan
IEEE Transactions on Device and Materials Reliability 6 (2), 117-122, 2006
85 2006 Direct observation of the structure of defect centers involved in the negative bias temperature instability JP Campbell, PM Lenahan, AT Krishnan, S Krishnan
Applied Physics Letters 87 (20), 2005
71 2005 NBTI: An atomic-scale defect perspective JP Campbell, PM Lenahan, AT Krishnan, S Krishnan
2006 IEEE International Reliability Physics Symposium Proceedings, 442-447, 2006
61 2006 Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors JP Campbell, PM Lenahan, AT Krishnan, S Krishnan
Journal of Applied Physics 103 (4), 2008
54 2008 Oxide reliability of SiC MOS devices L Yu, KP Cheung, J Campbell, JS Suehle, K Sheng
2008 IEEE International Integrated Reliability Workshop Final Report, 141-144, 2008
49 2008 Radiation-induced interface traps in MOS devices: Capture cross section and density of states of P/sub b1/silicon dangling bond centers PM Lenahan, NA Bohna, JP Campbell
IEEE Transactions on Nuclear Science 49 (6), 2708-2712, 2002
44 2002 Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs JP Campbell, LC Yu, KP Cheung, J Qin, JS Suehle, A Oates, K Sheng
2009 IEEE International Conference on IC Design and Technology, 17-20, 2009
40 2009 Interface-state capture cross section—Why does it vary so much? JT Ryan, A Matsuda, JP Campbell, KP Cheung
Applied Physics Letters 106 (16), 2015
38 2015 Location, structure, and density of states of NBTI-induced defects in plasma nitrided pMOSFETs JP Campbell, PM Lenahan, AT Krishnan, S Krishnan
2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007
35 2007 Time dependent dielectric breakdown in high quality SiC MOS capacitors Z Chbili, KP Cheung, JP Campbell, J Chbili, M Lahbabi, DE Ioannou, ...
Materials Science Forum 858, 615-618, 2016
33 2016 First Direct Experimental Studies of Hf0.5 Zr0.5 O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric … W Chung, M Si, PR Shrestha, JP Campbell, KP Cheung, DY Peide
2018 IEEE Symposium on VLSI Technology, 89-90, 2018
32 2018 The origins of random telegraph noise in highly scaled SiON nMOSFETs JP Campbell, J Qin, KP Cheungl, L Yu, JS Suehlel, A Oates, K Sheng
2008 IEEE International Integrated Reliability Workshop Final Report, 105-109, 2008
32 2008 Electron spin resonance scanning probe spectroscopy for ultrasensitive biochemical studies JP Campbell, JT Ryan, PR Shrestha, Z Liu, C Vaz, JH Kim, V Georgiou, ...
Analytical Chemistry 87 (9), 4910-4916, 2015
29 2015 
Pragya Rasmi ShresthaOld Dominion University and National Institute of Standards and technologyEmail được xác minh tại nist.gov