N-polar GaN: Epitaxy, properties, and device applications S Mohanty, K Khan, E Ahmadi
Progress in Quantum Electronics 87, 100450, 2023
25 2023 Si doping of β-Ga2O3 by disilane via hybrid plasma-assisted molecular beam epitaxy Z Wen, K Khan, X Zhai, E Ahmadi
Applied Physics Letters 122 (8), 2023
22 2023 β-(Al, Ga) 2O3 for High Power Applications—A Review on Material Growth and Device Fabrication A Jian, K Khan, E Ahmadi
International Journal of High Speed Electronics and Systems 28 (01n02), 1940006, 2019
19 2019 Infrared dielectric functions and Brillouin zone center phonons of M Stokey, R Korlacki, M Hilfiker, S Knight, S Richter, V Darakchieva, ...
Physical Review Materials 6 (1), 014601, 2022
15 2022 Scope of geothermal potential of Bangladesh: A review K Khan, M Ahmed, MS Parvez, MM Hossain
2015 3rd International Conference on Green Energy and Technology (ICGET), 1-4, 2015
13 2015 Thermal stability of HVPE-grown (0001) α-Ga2O3 on sapphire template under vacuum and atmospheric environments Z Wen, K Khan, K Sun, R Wellen, Y Oshima, E Ahmadi
Journal of Vacuum Science & Technology A 41 (4), 2023
12 2023 Demonstration of device-quality 60% relaxed In0.2 Ga0.8 N on porous GaN pseudo-substrates grown by PAMBE C Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ...
Journal of Applied Physics 131 (1), 015701, 2022
12 2022 Threephase SMS prepaid digital energy meter A Barua, N Mohammad, MA Arafat, K Khan, AI Abbas, R Chaudhary
International Conference on Electrical and Computer Engineering, 2012
11 2012 Effect of UV Laser Irradiation on the properties of NiO films and ZnO/NiO Heterostructures S Itapu, K Khan, DG Georgiev
MRS Advances 1 (04), 293 - 298, 2016
8 2016 Schottky barrier gate N-polar GaN-on-sapphire deep recess HEMT with record 10.5 dB linear gain and 50.2% PAE at 94 GHz E Akso, H Collins, K Khan, B Wang, W Li, C Clymore, E Kayede, W Liu, ...
IEEE Microwave and Wireless Technology Letters 34 (2), 183-186, 2024
7 2024 Demonstration of N-Polar GaN MIS-HEMT with High-k Atomic Layer Deposited HfO2 as Gate Dielectric S Mohanty, Z Jian, K Khan, E Ahmadi
Journal of Electronic Materials 52 (4), 2596-2602, 2023
7 2023 Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy K Khan, S Diez, K Sun, C Wurm, UK Mishra, E Ahmadi
APL Materials 9 (12), 2021
7 2021 Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3 X Xia, JS Li, Z Wen, K Khan, MI Khan, E Ahmadi, Y Oshima, DC Hays, ...
Journal of Vacuum Science & Technology A 41 (2), 2023
6 2023 Strain-induced formation of self-assembled InGaN/GaN superlattices in nominal InGaN films grown by plasma-assisted molecular beam epitaxy K Khan, K Sun, C Wurm, K Datta, PB Deotare, E Ahmadi
Physical Review Materials 5 (12), 124606, 2021
6 2021 Growth of high quality (In, Ga) N films on O-face ZnO substrates by plasma-assisted molecular beam epitaxy K Khan, M Biswas, E Ahmadi
AIP Advances 10 (7), 2020
6 2020 Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy GA Alvarez, J Casamento, L van Deurzen, MI Khan, K Khan, E Jeong, ...
Materials Research Letters 11 (12), 1048-1054, 2023
5 2023 N-Polar GaN Deep Recess HEMT With Atomic Layer Deposition HfO2 as Gate Insulator O Odabasi, S Mohanty, K Khan, E Ahmadi
IEEE Transactions on Electron Devices 70 (9), 4572-4577, 2023
5 2023 Rectifying behavior and light emission from nickel oxide MIS structures K Khan, S Itapu, DG Georgiev
MRS Advances 1 (49), 3341-3347, 2016
5 2016 Selective-Area Growth of GaN and AlGaN Nanowires on N-Polar GaN Templates with 4° Miscut by Plasma-Assisted Molecular Beam Epitaxy K Khan, ZA Jian, J Li, K Sun, E Ahmadi
Journal of Crystal Growth 611 (127181), 1-7, 2023
4 2023 Negative differential resistance (NDR) behavior of nickel oxide (NiO) based metal-insulator-semiconductor structures K Khan, S Itapu, DG Georgiev
Journal of Electronic Materials 49 (1), 333-340, 2020
3 2020