| Organic/inorganic hybrid stretchable piezoelectric nanogenerators for self‐powered wearable electronics AS Dahiya, F Morini, S Boubenia, K Nadaud, D Alquier, G Poulin‐Vittrant Advanced Materials Technologies 3 (2), 1700249, 2018 | 133 | 2018 |
| A facile hydrothermal approach for the density tunable growth of ZnO nanowires and their electrical characterizations S Boubenia, AS Dahiya, G Poulin-Vittrant, F Morini, K Nadaud, D Alquier Scientific reports 7 (1), 15187, 2017 | 77 | 2017 |
| Evidence of electrical activity of extended defects in 3C–SiC grown on Si X Song, JF Michaud, F Cayrel, M Zielinski, M Portail, T Chassagne, ... Applied Physics Letters 96 (14), 2010 | 73 | 2010 |
| Transient enhanced diffusion of boron in presence of end-of-range defects C Bonafos, M Omri, B De Mauduit, G BenAssayag, A Claverie, D Alquier, ... Journal of applied physics 82 (6), 2855-2861, 1997 | 73 | 1997 |
| Transient enhanced diffusion in preamorphized silicon: the role of the surface NEB Cowern, D Alquier, M Omri, A Claverie, A Nejim Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999 | 71 | 1999 |
| Fabrication of ZnO nanowire based piezoelectric generators and related structures C Opoku, AS Dahiya, C Oshman, F Cayrel, G Poulin-Vittrant, D Alquier, ... Physics Procedia 70, 858-862, 2015 | 68 | 2015 |
| Fabrication of field-effect transistors and functional nanogenerators using hydrothermally grown ZnO nanowires C Opoku, AS Dahiya, F Cayrel, G Poulin-Vittrant, D Alquier, N Camara RSC Advances 5 (86), 69925-69931, 2015 | 45 | 2015 |
| The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon C Bonafos, A Claverie, D Alquier, C Bergaud, A Martinez, L Laanab, ... Applied physics letters 71 (3), 365-367, 1997 | 45 | 1997 |
| Single-crystalline ZnO sheet source-gated transistors AS Dahiya, C Opoku, RA Sporea, B Sarvankumar, G Poulin-Vittrant, ... Scientific Reports 6 (1), 19232, 2016 | 43 | 2016 |
| Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon CL LIU Chinese Physics C 28 (9), 1013-1016, 2004 | 42 | 2004 |
| Fabrication and characterization of ZnO nanowire-based piezoelectric nanogenerators for low frequency mechanical energy harvesting G Poulin-Vittrant, C Oshman, C Opoku, AS Dahiya, N Camara, D Alquier, ... Physics Procedia 70, 909-913, 2015 | 40 | 2015 |
| Elastic energy of strained islands: Contribution of the substrate as a function of the island aspect ratio and inter-island distance A Ponchet, D Lacombe, L Durand, D Alquier, JM Cardonna Applied physics letters 72 (23), 2984-2986, 1998 | 40 | 1998 |
| Emerging SiC applications beyond power electronic devices F La Via, D Alquier, F Giannazzo, T Kimoto, P Neudeck, H Ou, ... Micromachines 14 (6), 1200, 2023 | 37 | 2023 |
| Deposition time and annealing effects of ZnO seed layer on enhancing vertical alignment of piezoelectric ZnO nanowires T Slimani Tlemcani, C Justeau, K Nadaud, G Poulin-Vittrant, D Alquier Chemosensors 7 (1), 7, 2019 | 36 | 2019 |
| Stability evaluation of ZnO nanosheet based source-gated transistors AS Dahiya, RA Sporea, G Poulin-Vittrant, D Alquier Scientific Reports 9 (1), 2979, 2019 | 33 | 2019 |
| Interactions between Dopants and End-of-Range Defects in Silicon A Claverie, C Bonafos, A Martinez, D Alquier Solid State Phenomena 47, 195-204, 1995 | 33 | 1995 |
| Optimization of the fabrication of sealed capacitive transducers using surface micromachining B Belgacem, D Alquier, P Muralt, J Baborowski, S Lucas, R Jerisian Journal of Micromechanics and Microengineering 14 (2), 299, 2003 | 32 | 2003 |
| Is there an effect of the proximity of a “free-surface” on the formation of End-Of-Range defects? M Omri, C Bonafos, A Claverie, A Nejim, F Cristiano, D Alquier, A Martinez, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996 | 32 | 1996 |
| Flexible organic/inorganic hybrid field-effect transistors with high performance and operational stability AS Dahiya, C Opoku, G Poulin-Vittrant, N Camara, C Daumont, ... ACS Applied Materials & Interfaces 9 (1), 573-584, 2017 | 30 | 2017 |
| Porosity and thickness characterization of porous Si and oxidized porous Si layers–An ultraviolet–visible–mid infrared ellipsometry study B Fodor, E Agocs, B Bardet, T Defforge, F Cayrel, D Alquier, M Fried, ... microporous and mesoporous materials 227, 112-120, 2016 | 30 | 2016 |
Jean-François MICHAUDFull professor in electronics - University of Tours (FRANCE)Email được xác minh tại univ-tours.fr