Theo dõi
Yu Li
Tiêu đề
Trích dẫn bởi
Trích dẫn bởi
Năm
Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two‐dimensional layered materials
Y Li, S Long, Q Liu, H Lv, M Liu
Small 13 (35), 1604306, 2017
2062017
Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging
Y Zhang, GQ Mao, X Zhao, Y Li, M Zhang, Z Wu, W Wu, H Sun, Y Guo, ...
Nature communications 12 (1), 7232, 2021
1652021
Investigation on the conductive filament growth dynamics in resistive switching memory via a universal Monte Carlo simulator
Y Li, M Zhang, S Long, J Teng, Q Liu, H Lv, E Miranda, J Suñé, M Liu
Scientific reports 7 (1), 11204, 2017
452017
Nanoscale room-temperature multilayer skyrmionic synapse for deep spiking neural networks
R Chen, C Li, Y Li, J Miles, G Indiveri, S Furber, VF Pavlidis, C Moutafis
Physical Review Applied 14, 014096, 2020
372020
Tunable terahertz oscillation arising from Bloch-point dynamics in chiral magnets
Y Li, L Pierobon, M Charilaou, HB Braun, NR Walet, JF Löffler, JJ Miles, ...
Physical Review Research 2 (3), 033006, 2020
282020
Skyrmionic interconnect device
R Chen, Y Li, VF Pavlidis, C Moutafis
Physical Review Research 2 (4), 043312, 2020
242020
Collective antiskyrmion-mediated phase transition and defect-induced melting in chiral magnetic films
L Pierobon, C Moutafis, Y Li, JF Löffler, M Charilaou
Scientific reports 8 (1), 16675, 2018
152018
Voltage-controlled skyrmionic interconnect with multiple magnetic information carriers
R Chen, Y Li
ACS Applied Materials & Interfaces 14 (26), 30420-30434, 2022
112022
A cell-based clustering model for the reset statistics in RRAM
H Sun, M Zhang, Y Li, S Long, Q Liu, H Lv, J Sune, M Liu
Applied Physics Letters 110 (12), 2017
102017
Exchange stiffness constant determination using multiple-mode FMR perpendicular standing spin waves
HJ Waring, Y Li, NAB Johansson, C Moutafis, IJ Vera-Marun, T Thomson
Journal of Applied Physics 133 (6), 2023
82023
Magnetic Bloch-point hopping in multilayer skyrmions and associated emergent electromagnetic signatures
Y Li, S Mankovsky, S Polesya, H Ebert, C Moutafis
Physical Review B 104 (14), L140409, 2021
82021
Fatigue of NbOx-Based Locally Active Memristors—Part I: Experimental Characteristics
Y Ding, Y Li, S Jia, P Chen, X Zhang, W Wang, Y Li, Y Hao, J Bi, T Gong, ...
IEEE Transactions on Electron Devices 70 (12), 6600-6605, 2023
72023
Magnetization dynamics in synthetic ferromagnetic thin films
HJ Waring, Y Li, C Moutafis, IJ Vera-Marun, T Thomson
Physical Review B 104 (1), 014419, 2021
62021
Meronlike spin textures in in-plane-magnetized thin films
J Vijayakumar, Y Li, D Bracher, CW Barton, M Horisberger, T Thomson, ...
Physical Review Applied 14 (5), 054031, 2020
62020
Fatigue of NbOx-Based Locally Active Memristors—Part II: Mechanisms and Modeling
Y Li, Y Ding, X Zhang, S Jia, W Wang, Y Li, M Wang, H Jiang, Q Liu, N Xu, ...
IEEE Transactions on Electron Devices 70 (12), 6606-6612, 2023
32023
Encoding and multiplexing information signals in magnetic multilayers with fractional skyrmion tubes
R Chen, Y Li, W Griggs, Y Zang, VF Pavlidis, C Moutafis
ACS applied materials & interfaces 15 (28), 34145-34158, 2023
32023
Statistical analysis of “tail bits” phenomena with defect clustering in RESET switching process of RRAM devices
Y Li, H Sun, M Zhang, S Long, Q Liu, H Lv, J Suñé, M Liu
2017 IEEE 24th International Symposium on the Physical and Failure Analysis …, 2017
32017
Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0. 5Zr0. 5O2 thin films by thermal atomic layer deposition
S Wu, R Cao, H Jiang, Y Li, X Zhang, Y Yang, Y Wang, Y Wei, Q Liu
Journal of Semiconductors 45 (3), 032301, 2024
22024
Tailoring energy barriers of Bloch-point-mediated transitions between topological spin textures
Y Li, Y Zang, R Chen, C Moutafis
Physical Review B 109 (2), 024418, 2024
22024
Memristor-based feature learning for pattern classification
T Shi, L Gao, Y Tian, S Tang, J Liu, Y Li, R Zhou, S Cui, H Zhang, Y Li, ...
Nature Communications 16 (1), 913, 2025
12025
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