Silicon carbide: A unique platform for metal-oxide-semiconductor physics G Liu, BR Tuttle, S Dhar
Applied Physics Reviews 2 (2), 2015
320 2015 Mechanical stability of possible structures of PtN investigated using first-principles calculations SKR Patil, SV Khare, BR Tuttle, JK Bording, S Kodambaka
Physical Review B—Condensed Matter and Materials Physics 73 (10), 104118, 2006
216 2006 Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors YS Puzyrev, T Roy, M Beck, BR Tuttle, RD Schrimpf, DM Fleetwood, ...
Journal of Applied Physics 109 (3), 2011
162 2011 Tunneling through ultrathin M Städele, BR Tuttle, K Hess
Journal of Applied Physics 89 (1), 348-363, 2001
153 2001 Structure, energetics, and vibrational properties of Si-H bond dissociation in silicon B Tuttle, CG Van de Walle
Physical review B 59 (20), 12884, 1999
143 1999 A Quantitative Model for ELDRS and NL Rowsey, ME Law, RD Schrimpf, DM Fleetwood, BR Tuttle, ...
IEEE Transactions on Nuclear Science 58 (6), 2937-2944, 2011
91 2011 Energetics and diffusion of hydrogen in SiO 2 B Tuttle
Physical Review B 61 (7), 4417, 2000
85 2000 Atomic state and characterization of nitrogen at the SiC/SiO2 interface Y Xu, X Zhu, HD Lee, C Xu, SM Shubeita, AC Ahyi, Y Sharma, ...
Journal of Applied Physics 115 (3), 2014
80 2014 Diffusion of O vacancies near ab initio investigation C Tang, B Tuttle, R Ramprasad
Physical Review B—Condensed Matter and Materials Physics 76 (7), 073306, 2007
75 2007 Defect Interactions of BR Tuttle, DR Hughart, RD Schrimpf, DM Fleetwood, ST Pantelides
IEEE Transactions on Nuclear Science 57 (6), 3046-3053, 2010
74 2010 Microscopic theory of hydrogen in silicon devices CG Van de Walle, BR Tuttle
IEEE Transactions on Electron Devices 47 (10), 1779-1786, 2000
74 2000 Energetics of hydrogen in amorphous silicon: An ab initio study B Tuttle, JB Adams
Physical Review B 57 (20), 12859, 1998
70 1998 Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime K Hess, LF Register, B Tuttle, J Lyding, IC Kizilyalli
Physica E: Low-dimensional Systems and Nanostructures 3 (1-3), 1-7, 1998
67 1998 Theory of channel hot-carrier degradation in MOSFETs K Hess, LF Register, W McMahon, B Tuttle, O Aktas, U Ravaioli, ...
Physica B: Condensed Matter 272 (1-4), 527-531, 1999
64 1999 Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions T Roy, YS Puzyrev, BR Tuttle, DM Fleetwood, RD Schrimpf, DF Brown, ...
Applied Physics Letters 96 (13), 2010
62 2010 Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors YS Puzyrev, BR Tuttle, RD Schrimpf, DM Fleetwood, ST Pantelides
Applied Physics Letters 96 (5), 2010
62 2010 Reactions of water molecules in silica-based network glasses IG Batyrev, B Tuttle, DM Fleetwood, RD Schrimpf, L Tsetseris, ...
Physical review letters 100 (10), 105503, 2008
59 2008 Large excitonic effects in group-IV sulfide monolayers BR Tuttle, SM Alhassan, ST Pantelides
Physical Review B 92 (23), 235405, 2015
58 2015 Magnitude of the threshold energy for hot electron damage in metal–oxide–semiconductor field effect transistors by hydrogen desorption K Hess, B Tuttle, F Register, DK Ferry
Applied Physics Letters 75 (20), 3147-3149, 1999
55 1999 The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing DR Hughart, RD Schrimpf, DM Fleetwood, NL Rowsey, ME Law, BR Tuttle, ...
IEEE Transactions on Nuclear Science 59 (6), 3087-3092, 2012
54 2012 
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityEmail được xác minh tại vanderbilt.edu