| Phase change random access memory for neuro‐inspired computing Q Wang, G Niu, W Ren, R Wang, X Chen, X Li, ZG Ye, YH Xie, S Song, ... Advanced Electronic Materials 7 (6), 2001241, 2021 | 66 | 2021 |
| The “gene” of reversible phase transformation of phase change materials: Octahedral motif Z Song, R Wang, Y Xue, S Song Nano Research 15, 765-772, 2022 | 34 | 2022 |
| Phase‐change memory based on matched Ge‐Te, Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability R Wang, Z Song, W Song, T Xin, S Lv, S Song, J Liu InfoMat 3 (9), 1008-1015, 2021 | 23 | 2021 |
| Set/Reset Bilaterally Controllable Resistance Switching Ga‐doped Ge2Sb2Te5 Long‐Term Electronic Synapses for Neuromorphic Computing Q Wang, R Luo, Y Wang, W Fang, L Jiang, Y Liu, R Wang, L Dai, J Zhao, ... Advanced Functional Materials 33 (19), 2213296, 2023 | 22 | 2023 |
| Ultracompact high‐extinction‐ratio nonvolatile on‐chip switches based on structured phase change materials W Li, X Cao, S Song, L Wu, R Wang, Y Jin, Z Song, A Wu Laser & Photonics Reviews 16 (6), 2100717, 2022 | 21 | 2022 |
| Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact X Wang, S Song, H Wang, T Guo, Y Xue, R Wang, HS Wang, L Chen, ... Advanced Science 9 (25), 2202222, 2022 | 19 | 2022 |
| Reliable Ge2Sb2Te5 based phase-change electronic synapses using carbon doping and programmed pulses Q Wang, G Niu, R Wang, R Luo, ZG Ye, J Bi, X Li, Z Song, W Ren, S Song Journal of Materiomics 8 (2), 382-391, 2022 | 19 | 2022 |
| High thermal stability and fast operation speed phase-change memory devices containing Hf-doped Ge2Sb2Te5 films R Wang, J Shen, X Chen, H Wang, S Song, Z Song Materials Letters 278, 128402, 2020 | 14 | 2020 |
| Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact (Adv. Sci. 25/2022) X Wang, S Song, H Wang, T Guo, Y Xue, R Wang, HS Wang, L Chen, ... Advanced Science 9 (25), 2270159, 2022 | 3 | 2022 |
| High Driving Current Selector Based on As-Implanted HfO2 Thin Film for 3D Phase Change Memory R Wang, T Guo, D Yao, S Song, Z Song ACS Applied Electronic Materials 4 (1), 99-103, 2021 | 3 | 2021 |
| Mechanism of titanium–nitride chemical mechanical polishing DH Feng, RB Wang, AX Xu, F Xu, WL Wang, WL Liu, ZT Song Chinese Physics B 30 (2), 028301, 2021 | 3 | 2021 |
| Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application M Zhang, R Wang, X Zou, S Song, Y Bao, L Wu, Z Song, X Zhou Applied Physics Letters 124 (20), 2024 | 2 | 2024 |
| Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application J Zhang, W Fang, R Wang, C Li, J Zheng, X Zou, S Song, Z Song, X Zhou Nanomaterials 13 (6), 1050, 2023 | 2 | 2023 |
| Understanding the mechanism of plasma etching of carbon-doped GeSbTe phase change material J Liu, J Zhang, Z Wan, Y Chen, J Zheng, X Zou, S Song, S Qiao, R Wang, ... Applied Surface Science 671, 160696, 2024 | | 2024 |
| 300 mm integration of a scalable phase change material spacer by inductively coupled plasma etching W Fang, J Zheng, J Zhang, C Li, R Wang, S Song, X Li, Z Song, X Zhou Materials Science in Semiconductor Processing 164, 107591, 2023 | | 2023 |
| Robust thermal stability in DRAM-like Sb2Te-based phase change memory by Hafnium modified R Wang, Z Yuan, X Chen, S Song, Z Song Journal of Materials Science: Materials in Electronics 33 (13), 10423-10429, 2022 | | 2022 |
| Understanding the Mechanism of Plasma Etching of Carbon-Doped Gesbte Phase Change Material on 300mm Wafer J Liu, J Zhang, Z Wan, Y Chen, J Zheng, X Zou, S Song, S Qiao, R Wang, ... Available at SSRN 4760526, 0 | | |