| Recent advances in organic‐based materials for resistive memory applications Y Li, Q Qian, X Zhu, Y Li, M Zhang, J Li, C Ma, H Li, J Lu, Q Zhang InfoMat 2 (6), 995-1033, 2020 | 181 | 2020 |
| Synthesis, Full Characterization, and Field Effect Transistor Behavior of a Stable Pyrene-Fused N-Heteroacene with Twelve Linearly Annulated Six-Membered Rings PY Gu, Z Wang, G Liu, H Yao, Z Wang, Y Li, J Zhu, S Li, Q Zhang Chemistry of Materials 29 (10), 4172-4175, 2017 | 143 | 2017 |
| Recent progress of organic–inorganic hybrid perovskites in RRAM, artificial synapse, and logic operation C Zhang, Y Li, C Ma, Q Zhang Small Science 2 (2), 2100086, 2022 | 115 | 2022 |
| Controlling crystallite orientation of diketopyrrolopyrrole‐based small molecules in thin films for highly reproducible multilevel memory device: role of furan substitution Y Li, H Li, H Chen, Y Wan, N Li, Q Xu, J He, D Chen, L Wang, J Lu Advanced Functional Materials 25 (27), 4246-4254, 2015 | 87 | 2015 |
| Emerging MXene‐Based Memristors for In‐Memory, Neuromorphic Computing, and Logic Operation S Ling, C Zhang, C Ma, Y Li, Q Zhang Advanced Functional Materials 33 (1), 2208320, 2023 | 68 | 2023 |
| Visual growth of nano-HOFs for low‐power memristive spiking neuromorphic system C Zhang, Y Li, F Yu, G Wang, K Wang, C Ma, X Yang, Y Zhou, Q Zhang Nano Energy 109, 108274, 2023 | 57 | 2023 |
| Highly robust organometallic small-molecule-based nonvolatile resistive memory controlled by a redox-gated switching mechanism Y Li, X Zhu, Y Li, M Zhang, C Ma, H Li, J Lu, Q Zhang ACS Applied Materials & Interfaces 11 (43), 40332-40338, 2019 | 56 | 2019 |
| Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications Y Li, C Zhang, Z Shi, C Ma, J Wang, Q Zhang Science China Materials 65 (8), 2110-2127, 2022 | 55 | 2022 |
| Thiadizoloquinoxaline-based N-heteroacenes as active elements for high-density data-storage device Y Li, Z Wang, C Zhang, P Gu, W Chen, H Li, J Lu, Q Zhang ACS applied materials & interfaces 10 (18), 15971-15979, 2018 | 52 | 2018 |
| Controlled deposition of large-area and highly-ordered thin films: effect of dip-coating-induced morphological evolution on resistive memory performance Y Li, C Zhang, Z Li, P Gu, Z Wang, H Li, J Lu, Q Zhang Journal of Materials Chemistry C 7 (12), 3512-3521, 2019 | 45 | 2019 |
| Carbon nanodots memristor: an emerging candidate toward artificial biosynapse and human sensory perception system C Zhang, M Chen, Y Pan, Y Li, K Wang, J Yuan, Y Sun, Q Zhang Advanced Science 10 (16), 2207229, 2023 | 40 | 2023 |
| Toward highly robust nonvolatile multilevel memory by fine tuning of the nanostructural crystalline solid‐state order Y Li, C Zhang, S Ling, C Ma, J Zhang, Y Jiang, R Zhao, H Li, J Lu, ... Small 17 (19), 2100102, 2021 | 37 | 2021 |
| Unexpected synthesis, properties, and nonvolatile memory device application of imidazole-fused azaacenes K Zhao, F Yu, W Liu, Y Huang, AA Said, Y Li, Q Zhang The Journal of organic chemistry 85 (1), 101-107, 2019 | 37 | 2019 |
| Overview of electric-field-induced deposition technology in fabricating organic thin films C Zhang, Y Li, H Li, Q Zhang, J Lu Journal of Materials Chemistry C 9 (2), 374-394, 2021 | 35 | 2021 |
| Fluorine-induced highly reproducible resistive switching performance: facile morphology control through the transition between J-and H-aggregation Y Li, Z Liu, H Li, Q Xu, J He, J Lu ACS Applied Materials & Interfaces 9 (11), 9926-9934, 2017 | 35 | 2017 |
| Organic frameworks memristor: An emerging candidate for data storage, artificial synapse, and neuromorphic device Z Xu, Y Li, Y Xia, C Shi, S Chen, C Ma, C Zhang, Y Li Advanced Functional Materials 34 (16), 2312658, 2024 | 31 | 2024 |
| Nonvolatile tri‐state resistive memory behavior of a stable pyrene‐fused N‐heteroacene with ten linearly‐annulated rings Y Li, C Zhang, P Gu, Z Wang, Z Li, H Li, J Lu, Q Zhang Chemistry–A European Journal 24 (31), 7845-7851, 2018 | 30 | 2018 |
| Adjustment of ON-State Retention Ability Based on New Donor–Acceptor Imides through Structural Tailoring for Volatile Device Applications H Zhuang, Q Zhou, Y Li, Q Zhang, H Li, Q Xu, N Li, J Lu, L Wang ACS Applied Materials & Interfaces 6 (1), 94-100, 2014 | 30 | 2014 |
| Controllable and versatile electrophoretic deposition technology for monolithic organic memory devices C Zhang, H Li, Y Su, Q Zhang, Y Li, J Lu ACS applied materials & interfaces 12 (13), 15482-15490, 2020 | 28 | 2020 |
| Inserting thienyl linkers into conjugated molecules for efficient multilevel electronic memory: a new understanding of charge‐trapping in organic materials Y Li, H Li, J He, Q Xu, N Li, D Chen, J Lu Chemistry–An Asian Journal 11 (6), 906-914, 2016 | 28 | 2016 |
Cheng Zhang (USTS)Suzhou University of Science and TechnologyEmail được xác minh tại usts.edu.cn
