| InGaN/Dilute-As GaNAs interface quantum well for red emitters CK Tan, D Borovac, W Sun, N Tansu Scientific reports 6 (1), 1-6, 2016 | 46 | 2016 |
| AlN/GaN Digital alloy for mid-and deep-ultraviolet optoelectronics W Sun, CK Tan, N Tansu Scientific Reports 7 (1), 1-8, 2017 | 45 | 2017 |
| Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers SA Al Muyeed, W Sun, X Wei, R Song, DD Koleske, N Tansu, JJ Wierer Jr AIP Advances 7 (10), 105312, 2017 | 41 | 2017 |
| Narrow-linewidth red-emission Eu3+-doped TiO2 spheres for light-emitting diodes P Zhu, H Zhu, W Qin, BH Dantas, W Sun, CK Tan, N Tansu Journal of Applied Physics 119 (12), 124305, 2016 | 40 | 2016 |
| III-Nitride digital alloy: electronics and optoelectronics properties of the InN/GaN ultra-short period superlattice nanostructures W Sun, CK Tan, N Tansu Scientific reports 7 (1), 1-8, 2017 | 37 | 2017 |
| Large optical gain AlInN-delta-GaN quantum well for deep ultraviolet emitters CK Tan, W Sun, D Borovac, N Tansu Scientific reports 6 (1), 1-7, 2016 | 37 | 2016 |
| Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission W Sun, SA Al Muyeed, R Song, JJ Wierer Jr, N Tansu Applied Physics Letters 112 (20), 201106, 2018 | 32 | 2018 |
| Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers SA Al Muyeed, W Sun, MR Peart, RM Lentz, X Wei, D Borovac, R Song, ... Journal of Applied Physics 126 (21), 213106, 2019 | 23 | 2019 |
| Effect of interface roughness on Auger recombination in semiconductor quantum wells CK Tan, W Sun, JJ Wierer Jr, N Tansu AIP Advances 7 (3), 035212, 2017 | 23 | 2017 |
| Crystal orientation dependence of gallium nitride wear G Zeng, W Sun, R Song, N Tansu, BA Krick Scientific Reports 7 (1), 1-6, 2017 | 20 | 2017 |
| Hybrid Integration of n-MoS2/p-GaN Diodes by Quasi-van der Waals Epitaxy C Liu, H Huang, W Choi, J Kim, K Jung, W Sun, N Tansu, W Zhou, H Kuo, ... ACS Applied Electronic Materials 2 (2), 419-425, 2020 | 19 | 2020 |
| First-Principle Electronic Properties of Dilute-P GaN1− xPx Alloy for Visible Light Emitters CK Tan, D Borovac, W Sun, N Tansu Scientific Reports 6 (1), 1-9, 2016 | 19 | 2016 |
| Strained-layer quantum well materials grown by MOCVD for diode laser application LJ Mawst, H Kim, G Smith, W Sun, N Tansu Progress in Quantum Electronics 75 (C), 2021 | 18 | 2021 |
| Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices MR Peart, X Wei, D Borovac, W Sun, N Tansu, JJ Wierer Jr ACS Applied Electronic Materials 1 (8), 1367-1371, 2019 | 16 | 2019 |
| Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes P Zhu, CK Tan, W Sun, N Tansu Applied optics 54 (34), 10299-10303, 2015 | 16 | 2015 |
| On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE D Borovac, W Sun, R Song, JJ Wierer Jr, N Tansu Journal of Crystal Growth 533, 125469, 2020 | 13 | 2020 |
| Ultra-broadband optical gain in III-nitride digital alloys W Sun, CK Tan, JJ Wierer, N Tansu Scientific Reports 8 (1), 1-7, 2018 | 12 | 2018 |
| Dilute-As AlNAs alloy for deep-ultraviolet emitter CK Tan, D Borovac, W Sun, N Tansu Scientific Reports 6 (1), 1-7, 2016 | 12 | 2016 |
| Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching X Wei, SA Al Muyeed, MR Peart, W Sun, N Tansu, JJ Wierer Jr Applied Physics Letters 113 (12), 121106, 2018 | 11 | 2018 |
| Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness W Sun, H Kim, LJ Mawst, N Tansu Journal of Crystal Growth 531, 125381, 2020 | 10 | 2020 |
Nelson TansuHead of School & Professor, School of Electrical & Mechanical Engineering [EEE, ME, & BME]Email được xác minh tại adelaide.edu.au
