Theo dõi
SUBRAMANIAN S. IYER
Tiêu đề
Trích dẫn bởi
Trích dẫn bởi
Năm
Heterojunction bipolar transistors using Si-Ge alloys
SS Iyer, GL Patton, JMC Stork, BS Meyerson, DL Harame
IEEE Transactions on Electron Devices 36 (10), 2043-2064, 1989
5531989
Light emission from silicon
SS Iyer, YH Xie
Science 260 (5104), 40-46, 1993
5061993
Semiconductor chip having both compact memory and high performance logic
PD Agnello, BA Chen, SW Crowder, R Divakaruni, SS Iyer, D Sinitsky
US Patent 6,686,617, 2004
4402004
Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?
Laux, Fischetti
1992 International Technical Digest on Electron Devices Meeting, 553-556, 1992
4301992
Growth and strain compensation effects in the ternary Si1−x−yGexCy alloy system
K Eberl, SS Iyer, S Zollner, JC Tsang, FK LeGoues
Applied physics letters 60 (24), 3033-3035, 1992
3981992
Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
GL Patton, SS Iyer, SL Delage, S Tiwari, JMC Stork
IEEE Electron Device Letters 9 (4), 165-167, 1988
3371988
Method of making 3D integrated circuits
MG Farooq, SS Iyer, SJ Koester, H Zhu
US Patent 8,158,515, 2012
3262012
Single-etch stop process for the manufacture of silicon-on-insulator wafers
SS Iyer, E Baran, ML Mastroianni, RA Craven
US Patent 5,937,312, 1999
3111999
Substrate for tensilely strained semiconductor
BA Ek, SS Iyer, PM Pitner, AR Powell, MJ Tejwani
US Patent 5,461,243, 1995
2891995
Electrically programmable fuse (eFUSE) using electromigration in silicides
C Kothandaraman, SK Iyer, SS Iyer
IEEE Electron Device Letters 23 (9), 523-525, 2002
2792002
New approach to the growth of low dislocation relaxed SiGe material
AR Powell, SS Iyer, FK LeGoues
Applied physics letters 64 (14), 1856-1858, 1994
2661994
3D integrated circuit device fabrication with precisely controllable substrate removal
MG Farooq, R Hannon, SS Iyer, SJ Koester, S Purushothaman, RY Roy
US Patent 8,129,256, 2012
2602012
Three dimensional integrated circuit integration using dielectric bonding first and through via formation last
MG Farooq, R Hannon, SS Iyer, ER Kinser
US Patent 9,406,561, 2016
2252016
Production of substrate for tensilely strained semiconductor
BA Ek, SS Iyer, PM Pitner, AR Powell, MJ Tejwani
US Patent 5,759,898, 1998
2041998
Electrically programmable fuse (efuse): From memory redundancy to autonomic chips
N Robson, J Safran, C Kothandaraman, A Cestero, X Chen, ...
2007 IEEE Custom Integrated Circuits Conference, 799-804, 2007
2012007
Heterogeneous integration for performance and scaling
SS Iyer
IEEE Transactions on Components, Packaging and Manufacturing Technology 6 (7 …, 2016
1772016
Surface-stress-induced order in SiGe alloy films
FK LeGoues, VP Kesan, SS Iyer, J Tersoff, R Tromp
Physical review letters 64 (17), 2038, 1990
1771990
Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy
SS Iyer, RA Metzger, FG Allen
Journal of Applied Physics 52 (9), 5608-5613, 1981
1761981
Synthesis of Si1− yCy alloys by molecular beam epitaxy
SS Iyer, K Eberl, MS Goorsky, FK LeGoues, JC Tsang, F Cardone
Applied physics letters 60 (3), 356-358, 1992
1751992
3D integration structure and method using bonded metal planes
MG Farooq, SS Iyer
US Patent 7,939,369, 2011
1732011
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