| First principles calculations of intrinsic mobilities in tin-based oxide semiconductors SnO, SnO2, and Ta2SnO6 Y Hu, J Hwang, Y Lee, P Conlin, DG Schlom, S Datta, K Cho Journal of Applied Physics 126 (18), 2019 | 71 | 2019 |
| EOT of 0.62 nm and high electron mobility in La-silicate/Si structure based nMOSFETs achieved by utilizing metal-inserted poly-Si stacks and annealing at high temperature T Kawanago, Y Lee, K Kakushima, P Ahmet, K Tsutsui, A Nishiyama, ... IEEE transactions on electron devices 59 (2), 269-276, 2011 | 56 | 2011 |
| Size-dependent properties of ballistic silicon nanowire field effect transistors Y Lee, K Kakushima, K Shiraishi, K Natori, H Iwai Journal of Applied Physics 107 (11), 2010 | 34 | 2010 |
| Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths Y Lee, Y Hu, X Lang, D Kim, K Li, Y Ping, KMC Fu, K Cho Nature Communications 13 (1), 7501, 2022 | 32 | 2022 |
| Surface energy-driven preferential grain growth of metal halide perovskites: effects of nanoimprint lithography beyond direct patterning J Moon, S Kwon, M Alahbakhshi, Y Lee, K Cho, A Zakhidov, MJ Kim, Q Gu ACS Applied Materials & Interfaces 13 (4), 5368-5378, 2021 | 30 | 2021 |
| Effect of localization on photoluminescence and zero-field splitting of silicon color centers V Ivanov, J Simoni, Y Lee, W Liu, K Jhuria, W Redjem, Y Zhiyenbayev, ... Physical Review B 106 (13), 134107, 2022 | 27 | 2022 |
| Ambient effect on the Curie temperatures and magnetic domains in metallic two-dimensional magnets Z Tu, T Xie, Y Lee, J Zhou, AS Admasu, Y Gong, N Valanoor, J Cumings, ... npj 2D Materials and Applications 5 (1), 62, 2021 | 25 | 2021 |
| Semiconductor device being capable of improving the breakdown characteristics LEE Yeonghun US Patent App. 15/074,945, 2016 | 25 | 2016 |
| Gate capacitance modeling and diameter-dependent performance of nanowire MOSFETs Y Lee, K Kakushima, K Natori, H Iwai IEEE transactions on electron devices 59 (4), 1037-1045, 2012 | 24 | 2012 |
| 3-dimensional semiconductor device having memory cells stacked over substrate Y Lee, H Heo, MG Koo, DH Lee US Patent 9,299,447, 2016 | 20 | 2016 |
| Gate semi-around Si nanowire FET fabricated by conventional CMOS process with very high drivability S Sato, Y Lee, K Kakushima, P Ahmet, K Ohmori, K Natori, K Yamada, ... 2010 Proceedings of the European Solid State Device Research Conference, 361-364, 2010 | 19 | 2010 |
| Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process T Kawanago, T Suzuki, Y Lee, K Kakushima, P Ahmet, K Tsutsui, ... Solid-state electronics 68, 68-72, 2012 | 16 | 2012 |
| Fundamental origin of excellent low-noise property in 3D Si-MOSFETs∼ Impact of charge-centroid in the channel due to quantum effect on 1/f noise∼ W Feng, R Hettiarachchi, Y Lee, S Sato, K Kakushima, M Sato, K Fukuda, ... 2011 International Electron Devices Meeting, 27.7. 1-27.7. 4, 2011 | 15 | 2011 |
| Metal inserted poly-Si with high temperature annealing for achieving EOT of 0.62 nm in La-silicate MOSFET T Kawanago, Y Lee, K Kakushima, P Ahmet, K Tsutsui, A Nishiyama, ... 2011 Proceedings of the European Solid-State Device Research Conference …, 2011 | 11 | 2011 |
| A study on electronic structure of silicon nanowires with diverse diameters and orientations for high performance FET Y Lee, T Nagata, K Kakushima, K Shiraishi, H Iwai Proc. International Workshop on Density Functional Theory, Tokyo, November, 83, 2008 | 11 | 2008 |
| Real-time ab initio simulation of inelastic electron scattering using the exact, density functional, and alternative approaches Y Lee, X Yao, MV Fischetti, K Cho Physical Chemistry Chemical Physics 22 (16), 8616-8624, 2020 | 10 | 2020 |
| Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis Y Lee, K Kakushima, K Natori, H Iwai Journal of Applied Physics 109 (11), 2011 | 10 | 2011 |
| Operating characteristics of a semiconductor device LEE Yeonghun, DH Lee US Patent 9,455,009, 2016 | 8 | 2016 |
| Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors Y Lee, K Kakushima, K Shiraishi, K Natori, H Iwai Applied Physics Letters 97 (3), 2010 | 8 | 2010 |
| Three-dimensional semiconductor device and manufacturing method thereof LEE Yeonghun US Patent 9,818,758, 2017 | 7 | 2017 |
Kakushima KuniyukiInstitute of Science TokyoEmail được xác minh tại m.titech.ac.jp
