Radiation effects in MOS oxides JR Schwank, MR Shaneyfelt, DM Fleetwood, JA Felix, PE Dodd, P Paillet, ...
IEEE Transactions on Nuclear Science 55 (4), 1833-1853, 2008
1062 2008 Effects of oxide traps, interface traps, and ‘‘border traps’’on metal‐oxide‐semiconductor devices DM Fleetwood, PS Winokur, RA Reber Jr, TL Meisenheimer, JR Schwank, ...
Journal of applied physics 73 (10), 5058-5074, 1993
626 1993 'Border traps' in MOS devices DM Fleetwood
IEEE transactions on nuclear science 39 (2), 269-271, 1992
491 1992 Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices DM Fleetwood
IEEE Transactions on Nuclear Science 60 (3), 1706-1730, 2013
413 2013 Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ...
IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994
378 1994 Physical model for enhanced interface-trap formation at low dose rates SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ...
IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002
297 2002 1/f noise and radiation effects in MOS devices DM Fleetwood, TL Meisenheimer, JH Scofield
IEEE Transactions on Electron Devices 41 (11), 1953-1964, 1994
271 1994 Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices MR Shaneyfelt, DM Fleetwood, JR Schwank, KL Hughes
IEEE transactions on nuclear science 38 (6), 1187-1194, 1991
268 1991 Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments DM Fleetwood, PS Winokur, JR Schwank
IEEE transactions on nuclear science 35 (6), 1497-1505, 1988
266 1988 Defect generation by hydrogen at the Si-SiO 2 interface SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 87 (16), 165506, 2001
250 2001 An overview of high-temperature electronic device technologies and potential applications PL Dreike, DM Fleetwood, DB King, DC Sprauer, TE Zipperian
IEEE Transactions on Components, Packaging, and Manufacturing Technology …, 1994
248 1994 Charge separation for bipolar transistors SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ...
IEEE transactions on nuclear science 40 (6), 1276-1285, 1993
241 1993 Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 89 (28), 285505, 2002
240 2002 ELDRS in bipolar linear circuits: A review RL Pease, RD Schrimpf, DM Fleetwood
IEEE Transactions on Nuclear Science 56 (4), 1894-1908, 2009
238 2009 Border traps: Issues for MOS radiation response and long-term reliability DM Fleetwood, MR Shaneyfelt, WL Warren, JR Schwank, ...
Microelectronics Reliability 35 (3), 403-428, 1995
230 1995 1/f noise and defects in microelectronic materials and devices DM Fleetwood
IEEE Transactions on Nuclear Science 62 (4), 1462-1486, 2015
221 2015 Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002
215 2002 Evolution of total ionizing dose effects in MOS devices with Moore’s law scaling DM Fleetwood
IEEE Transactions on Nuclear Science 65 (8), 1465-1481, 2017
213 2017 Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors DM Fleetwood, JH Scofield
Physical review letters 64 (5), 579, 1990
207 1990 Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors X Hu, AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RD Geil, ...
IEEE Transactions on Nuclear Science 50 (6), 1791-1796, 2003
204 2003 
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityEmail được xác minh tại vanderbilt.edu
