Valence-band anticrossing in mismatched III-V semiconductor alloys K Alberi, J Wu, W Walukiewicz, KM Yu, OD Dubon, SP Watkins, CX Wang, ...
Physical Review B—Condensed Matter and Materials Physics 75 (4), 045203, 2007
485 2007 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/> 6 V MW Dvorak, CR Bolognesi, OJ Pitts, SP Watkins
IEEE Electron Device Letters 22 (8), 361-363, 2001
245 2001 Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy J Hu, XG Xu, JAH Stotz, SP Watkins, AE Curzon, MLW Thewalt, N Matine, ...
Applied Physics Letters 73 (19), 2799-2801, 1998
209 1998 InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs CR Bolognesi, MMW Dvorak, P Yeo, XG Xu, SP Watkins
IEEE Transactions on Electron Devices 48 (11), 2631-2639, 2001
104 2001 Heavily carbon-doped GaAsSb grown on InP for HBT applications SP Watkins, OJ Pitts, C Dale, XG Xu, MW Dvorak, N Matine, CR Bolognesi
Journal of Crystal growth 221 (1-4), 59-65, 2000
94 2000 Low‐temperature photoluminescence of epitaxial InAs Y Lacroix, CA Tran, SP Watkins, MLW Thewalt
Journal of applied physics 80 (11), 6416-6424, 1996
90 1996 InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations D Lackner, M Steger, MLW Thewalt, OJ Pitts, YT Cherng, SP Watkins, ...
Journal of Applied Physics 111 (3), 2012
76 2012 Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm D Lackner, OJ Pitts, M Steger, A Yang, MLW Thewalt, SP Watkins
Applied Physics Letters 95 (8), 2009
75 2009 Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsine G Haacke, SP Watkins, H Burkhard
Applied physics letters 54 (20), 2029-2031, 1989
73 1989 Lithium and lithium-carbon isoelectronic complexes in silicon: Luminescence-decay-time, absorption, isotope-splitting, and Zeeman measurements EC Lightowlers, LT Canham, G Davies, MLW Thewalt, SP Watkins
Physical Review B 29 (8), 4517, 1984
64 1984 Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction CR Bolognesi, N Matine, RW Dvorak, XG Xu, J Hu, SP Watkins
IEEE Electron Device Letters 20 (4), 155-157, 1999
63 1999 Geometric limits of coherent III-V core/shell nanowires O Salehzadeh, KL Kavanagh, SP Watkins
Journal of Applied Physics 114 (5), 2013
54 2013 Epitaxial growth of high-mobility GaAs using tertiarybutylarsine and triethylgallium G Haacke, SP Watkins, H Burkhard
Applied physics letters 56 (5), 478-480, 1990
52 1990 Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine SP Watkins, G Haacke
Applied physics letters 59 (18), 2263-2265, 1991
51 1991 Isoelectronic bound excitons in In-and T1-doped Si: A novel semiconductor defect SP Watkins, MLW Thewalt, T Steiner
Physical Review B 29 (10), 5727, 1984
50 1984 Rectifying characteristics of Te-doped GaAs nanowires O Salehzadeh, MX Chen, KL Kavanagh, SP Watkins
Applied Physics Letters 99 (18), 2011
47 2011 Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes L Zheng, X Zhang, Y Zeng, SR Tatavarti, SP Watkins, CR Bolognesi, ...
IEEE Photonics Technology Letters 17 (3), 651-653, 2005
47 2005 Metalorganic vapor phase epitaxy of high-quality XG Xu, J Hu, SP Watkins, N Matine, MW Dvorak, CR Bolognesi
Applied physics letters 74 (7), 976-978, 1999
46 1999 Photoluminescence lifetime, absorption and excitation spectroscopy measurements on isoelectronic bound excitons in beryllium-doped silicon MLW Thewalt, SP Watkins, UO Ziemelis, EC Lightowlers, MO Henry
Solid State Communications 44 (5), 573-577, 1982
46 1982 High mobility InAs grown on GaAs substrates using tertiarybutylarsine and trimethylindium SP Watkins, CA Tran, R Ares, G Soerensen
Applied physics letters 66 (7), 882-884, 1995
44 1995 