Theo dõi
Jo Shien Ng
Jo Shien Ng
Professor of Semiconductor Devices, University of Sheffield
Email được xác minh tại sheffield.ac.uk - Trang chủ
Tiêu đề
Trích dẫn bởi
Trích dẫn bởi
Năm
Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
HY Liu, IR Sellers, TJ Badcock, DJ Mowbray, MS Skolnick, KM Groom, ...
Applied Physics Letters 85 (5), 704-706, 2004
3432004
Design and performance of an InGaAs-InP single-photon avalanche diode detector
S Pellegrini, RE Warburton, LJJ Tan, JS Ng, AB Krysa, K Groom, ...
IEEE journal of quantum electronics 42 (4), 397-403, 2006
1882006
Room-temperature 1.6 μm light emission from InAs∕ GaAs quantum dots with a thin GaAsSb cap layer
HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, F Suarez, ...
Journal of applied physics 99 (4), 2006
1302006
Impact ionization coefficients in 4H-SiC
WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ...
IEEE Transactions on electron devices 55 (8), 1984-1990, 2008
1122008
Localization effects and band gap of GaAsBi alloys
AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ...
physica status solidi (b) 251 (6), 1276-1281, 2014
1072014
Excess avalanche noise in In0. 52Al0. 48As
YL Goh, ARJ MARSHALL, DJ Massey, JS Ng, CH Tan, M Hopkinson
IEEE journal of quantum electronics 43 (5-6), 503-507, 2007
1042007
Temperature dependence of avalanche breakdown in InP and InAlAs
LJJ Tan, DSG Ong, JS Ng, CH Tan, SK Jones, Y Qian, JPR David
IEEE Journal of Quantum Electronics 46 (8), 1153-1157, 2010
1022010
The effect of Bi composition to the optical quality of GaAs1− xBix
AR Mohmad, F Bastiman, CJ Hunter, JS Ng, SJ Sweeney, JPR David
Applied Physics Letters 99 (4), 2011
912011
Avalanche multiplication in InAlAs
YL Goh, DJ Massey, ARJ Marshall, JS Ng, CH Tan, WK Ng, GJ Rees, ...
IEEE Transactions on Electron Devices 54 (1), 11-16, 2006
862006
Avalanche noise characteristics in submicron InP diodes
LJJ Tan, JS Ng, CH Tan, JPR David
IEEE Journal of Quantum Electronics 44 (4), 378-382, 2008
842008
Effects of rapid thermal annealing on GaAs1-xBix alloys
AR Mohmad, F Bastiman, CJ Hunter, R Richards, SJ Sweeney, JS Ng, ...
Applied Physics Letters 101 (1), 2012
822012
Single-photon detection for long-range imaging and sensing
RH Hadfield, J Leach, F Fleming, DJ Paul, CH Tan, JS Ng, RK Henderson, ...
Optica 10 (9), 1124-1141, 2023
782023
Absorption Characteristics ofDiodes in the Near-Infrared
CJ Hunter, F Bastiman, AR Mohmad, R Richards, JS Ng, SJ Sweeney, ...
IEEE Photonics Technology Letters 24 (23), 2191-2194, 2012
752012
Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth
F Bastiman, ARB Mohmad, JS Ng, JPR David, SJ Sweeney
Journal of crystal growth 338 (1), 57-61, 2012
682012
Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As
JS Ng, CH Tan, JPR David, G Hill, GJ Rees
IEEE Transactions on Electron Devices 50 (4), 901-905, 2003
652003
Effect of dead space on avalanche speed [APDs]
JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ...
IEEE Transactions on Electron Devices 49 (4), 544-549, 2002
592002
Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga (In) NAs barrier and space layer
HY Liu, M Hopkinson, P Navaretti, M Gutierrez, JS Ng, JPR David
Applied physics letters 83 (24), 4951-4953, 2003
532003
InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product
S Xie, X Zhou, S Zhang, DJ Thomson, X Chen, GT Reed, JS Ng, CH Tan
Optics express 24 (21), 24242-24247, 2016
522016
Photoluminescence investigation of high quality GaAs1− xBix on GaAs
AR Mohmad, F Bastiman, JS Ng, SJ Sweeney, JPR David
Applied Physics Letters 98 (12), 2011
472011
Temperature dependence of AlGaAs soft X-ray detectors
AM Barnett, DJ Bassford, JE Lees, JS Ng, CH Tan, JPR David
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010
472010
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