Ion beam handbook for material analysis JW Mayer, E Rimini
Elsevier, 2012
745 2012 A melting model for pulsing‐laser annealing of implanted semiconductors P Baeri, SU Campisano, G Foti, E Rimini
Journal of Applied Physics 50 (2), 788-797, 1979
512 1979 Ion irradiation and defect formation in single layer graphene G Compagnini, F Giannazzo, S Sonde, V Raineri, E Rimini
Carbon 47 (14), 3201-3207, 2009
279 2009 Ion implantation: basics to device fabrication E Rimini
Springer Science & Business Media, 1994
259 1994 Ion-beam-induced epitaxial crystallization and amorphization in silicon F Priolo, E Rimini
Materials Science Reports 5 (7-8), 321-379, 1990
258 1990 Amorphous-to-crystal transition of nitrogen-and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements S Privitera, E Rimini, R Zonca
Applied physics letters 85 (15), 3044-3046, 2004
240 2004 Voids in silicon by He implantation: From basic to applications V Raineri, M Saggio, E Rimini
Journal of Materials Research 15 (7), 1449-1477, 2000
190 2000 Arsenic diffusion in silicon melted by high‐power nanosecond laser pulsing P Baeri, SU Campisano, G Foti, E Rimini
Applied Physics Letters 33 (2), 137-140, 1978
156 1978 Silicon planar technology for single-photon optical detectors E Sciacca, AC Giudice, D Sanfilippo, F Zappa, S Lombardo, R Consentino, ...
IEEE Transactions on Electron Devices 50 (4), 918-925, 2003
145 2003 Screening length and quantum capacitance in graphene by scanning probe microscopy F Giannazzo, S Sonde, V Raineri, E Rimini
Nano letters 9 (1), 23-29, 2009
137 2009 Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ...
Scientific reports 6 (1), 23843, 2016
131 2016 Mapping the density of scattering centers limiting the electron mean free path in graphene F Giannazzo, S Sonde, RL Nigro, E Rimini, V Raineri
Nano letters 11 (11), 4612-4618, 2011
128 2011 He-vacancy interactions in Si and their influence on bubble formation and evolution V Raineri, S Coffa, E Szilagyi, J Gyulai, E Rimini
Physical Review B 61 (2), 937, 2000
128 2000 How far will silicon nanocrystals push the scaling limits of NVMs technologies? B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ...
IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003
114 2003 Segregation effects in Cu-implanted Si after laser-pulse melting P Baeri, SU Campisano, G Foti, E Rimini
Physical Review Letters 41 (18), 1246, 1978
111 1978 Kinetics of phase formation in Au—A1 thin films SU Campisano, G Foti, E Rimini, SS Lau, JW Mayer
Philosophical Magazine 31 (4), 903-917, 1975
106 1975 Mechanisms of amorphization in ion implanted crystalline silicon SU Campisano, S Coffa, V Raineri, F Priolo, E Rimini
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1993
104 1993 Crystal nucleation and growth processes in S Privitera, C Bongiorno, E Rimini, R Zonca
Applied physics letters 84 (22), 4448-4450, 2004
97 2004 Dependence of trapping and segregation of indium in silicon on the velocity of the liquid‐solid interface P Baeri, JM Poate, SU Campisano, G Foti, E Rimini, AG Cullis
Applied Physics Letters 37 (10), 912-914, 1980
97 1980 Dechanneling by dislocations in ion-implanted Al ST Picraux, E Rimini, G Foti, SU Campisano
Physical Review B 18 (5), 2078, 1978
96 1978 