Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs AJ Lelis, R Green, DB Habersat, M El
IEEE Transactions on Electron Devices 62 (2), 316-323, 2014
505 2014 Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements AJ Lelis, D Habersat, R Green, A Ogunniyi, M Gurfinkel, J Suehle, ...
IEEE transactions on Electron Devices 55 (8), 1835-1840, 2008
390 2008 The nature of the trapped hole annealing process AJ Lelis, TR Oldham, HE Boesch, FB McLean
IEEE Transactions on Nuclear Science 36 (6), 1808-1815, 1989
358 1989 Spatial dependence of trapped holes determined from tunneling analysis and measured annealing TR Oldham, AJ Lelis, FB McLean
IEEE Transactions on Nuclear Science 33 (6), 1203-1209, 1986
289 1986 A physical model of high temperature 4H-SiC MOSFETs S Potbhare, N Goldsman, A Lelis, JM McGarrity, FB McLean, D Habersat
IEEE Transactions on Electron devices 55 (8), 2029-2040, 2008
228 2008 Reversibility of trapped hole annealing AJ Lelis, HE Boesch, TR Oldham, FB McLean
IEEE Transactions on Nuclear Science 35 (6), 1186-1191, 1988
210 1988 Time dependence of switching oxide traps AJ Lelis, TR Oldham
IEEE Transactions on Nuclear Science 41 (6), 1835-1843, 1994
209 1994 Transition layers at the SiO2∕ SiC interface T Zheleva, A Lelis, G Duscher, F Liu, I Levin, M Das
Applied Physics Letters 93 (2), 2008
207 2008 Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast M Gurfinkel, HD Xiong, KP Cheung, JS Suehle, JB Bernstein, Y Shapira, ...
IEEE Transactions on Electron Devices 55 (8), 2004-2012, 2008
155 2008 Physics-based numerical modeling and characterization of 6H -silicon-carbide metal–oxide–semiconductor field-effect transistors SK Powell, N Goldsman, JM McGarrity, J Bernstein, CJ Scozzie, A Lelis
Journal of Applied Physics 92 (7), 4053-4061, 2002
152 2002 Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor S Potbhare, N Goldsman, G Pennington, A Lelis, JM McGarrity
Journal of Applied Physics 100 (4), 2006
143 2006 An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors CJ Cochrane, PM Lenahan, AJ Lelis
Journal of Applied Physics 109 (1), 2011
131 2011 Relationship between 4H-SiC∕ SiO2 transition layer thickness and mobility TL Biggerstaff, CL Reynolds, T Zheleva, A Lelis, D Habersat, S Haney, ...
Applied Physics Letters 95 (3), 2009
119 2009 Electron spin resonance evidence that E'/sub/spl gamma//centers can behave as switching oxide traps JF Conley, PM Lenahan, AJ Lelis, TR Oldham
IEEE Transactions on Nuclear Science 42 (6), 1744-1749, 1995
111 1995 Post-irradiation effects in field-oxide isolation structures TR Oldham, AJ Lelis, HE Boesch, JM Benedetto, FB McLean, ...
IEEE Transactions on Nuclear Science 34 (6), 1184-1189, 1987
111 1987 Application of reliability test standards to SiC Power MOSFETs R Green, A Lelis, D Habersat
2011 International Reliability Physics Symposium, EX. 2.1-EX. 2.9, 2011
102 2011 Response of interface traps during high-temperature anneals (MOSFETs) AJ Lelis, TR Oldham, WM DeLancey
IEEE Transactions on nuclear Science 38 (6), 1590-1597, 1991
92 1991 Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs R Green, A Lelis, D Habersat
Japanese Journal of Applied Physics 55 (4S), 04EA03, 2016
90 2016 Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination CJ Cochrane, PM Lenahan, AJ Lelis
Applied Physics Letters 100 (2), 2012
90 2012 Bias stress-induced threshold-voltage instability of SiC MOSFETs AJ Lelis, DB Habersat, G Lopez, JM McGarrity, FB McLean, N Goldsman
Materials science forum 527, 1317-1320, 2006
73 2006 