Các bài viết có thể truy cập công khai - Bassem SalemTìm hiểu thêm
Không có ở bất kỳ nơi nào: 8
An innovative large scale integration of silicon nanowire-based field effect transistors
M Legallais, TTT Nguyen, M Mouis, B Salem, E Robin, P Chenevier, ...
Solid-State Electronics 143, 97-102, 2018
Các cơ quan ủy nhiệm: European Commission
Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion
T Cazimajou, M Legallais, M Mouis, C Ternon, B Salem, G Ghibaudo
Solid-State Electronics 143, 83-89, 2018
Các cơ quan ủy nhiệm: European Commission
Toward the integration of Si nanonets into FETs for biosensing applications
M Legallais, TTT Nguyen, M Mouis, B Salem, C Ternon
2017 Joint International EUROSOI Workshop and International Conference on …, 2017
Các cơ quan ủy nhiệm: European Commission
Electrical characterization of percolating silicon nanonet FETs for sensing applications
T Cazimajou, M Legallais, M Mouis, C Ternon, B Salem, G Ghibaudo
2017 Joint International EUROSOI Workshop and International Conference on …, 2017
Các cơ quan ủy nhiệm: European Commission
Low Temperature Electrical Characteristics of Si Nanonet Field Effect Transistors
T Cazimajou, M Legallais, TTT Nguyen, M Mouis, C Ternon, B Salem, ...
2019 Joint International EUROSOI Workshop and International Conference on …, 2019
Các cơ quan ủy nhiệm: European Commission
Near-room-temperature CO2 Capacitive Sensors Based on Hybrid Polymer Sensitive Materials
A Ghouma, B Salem, S Cavalaglio, JR Plaussu, G Crowin, RB Abbes, ...
IEEE Sensors Journal, 2025
Các cơ quan ủy nhiệm: Agence Nationale de la Recherche
Passivating and low damaging plasma etching of GaN using Cl2 and SiCl4 for recessed gate MOSc-HEMT devices
D Cascales, PP Barros, E Martinez, RB Abbes, B Salem
Semiconductor Science and Technology 39 (11), 115026, 2024
Các cơ quan ủy nhiệm: Agence Nationale de la Recherche
Influence of substrate biasing on structural, chemical and electrical properties of Al2O3 thin films deposited by PEALD
S Boubenia, G Lefevre, M Legallais, S Labau, F Bassani, MB Hachemi, ...
Semiconductor Science and Technology 37 (6), 065001, 2022
Các cơ quan ủy nhiệm: Agence Nationale de la Recherche
Có tại một số nơi: 49
Functional devices from bottom-up Silicon nanowires: A review
T Arjmand, M Legallais, TTT Nguyen, P Serre, M Vallejo-Perez, F Morisot, ...
Nanomaterials 12 (7), 1043, 2022
Các cơ quan ủy nhiệm: European Commission, Agence Nationale de la Recherche
Morphology transition of ZnO from thin film to nanowires on silicon and its correlated enhanced zinc polarity uniformity and piezoelectric responses
QC Bui, G Ardila, E Sarigiannidou, H Roussel, C Jiménez, ...
ACS Applied Materials & Interfaces 12 (26), 29583-29593, 2020
Các cơ quan ủy nhiệm: Agence Nationale de la Recherche
Effects of thermal annealing on the structural and electrical properties of ZnO thin films for boosting their piezoelectric response
QC Bui, B Salem, H Roussel, X Mescot, Y Guerfi, C Jiménez, V Consonni, ...
Journal of Alloys and Compounds 870, 159512, 2021
Các cơ quan ủy nhiệm: Agence Nationale de la Recherche
Improvement of AlN film quality using plasma enhanced atomic layer deposition with substrate biasing
M Legallais, H Mehdi, S David, F Bassani, S Labau, B Pelissier, T Baron, ...
ACS Applied Materials & Interfaces 12 (35), 39870-39880, 2020
Các cơ quan ủy nhiệm: Agence Nationale de la Recherche
Chemical bath deposition of ZnO nanowires using copper nitrate as an additive for compensating doping
C Lausecker, B Salem, X Baillin, O Chaix-Pluchery, H Roussel, S Labau, ...
Inorganic Chemistry 60 (3), 1612-1623, 2021
Các cơ quan ủy nhiệm: Agence Nationale de la Recherche
H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces
S Benrabah, M Legallais, P Besson, S Ruel, L Vauche, B Pelissier, ...
Applied Surface Science 582, 152309, 2022
Các cơ quan ủy nhiệm: Agence Nationale de la Recherche
Modeling the elongation of nanowires grown by chemical bath deposition using a predictive approach
C Lausecker, B Salem, X Baillin, V Consonni
The Journal of Physical Chemistry C 123 (48), 29476-29483, 2019
Các cơ quan ủy nhiệm: Agence Nationale de la Recherche
Material engineering of percolating silicon nanowire networks for reliable and efficient electronic devices
M Legallais, TTT Nguyen, T Cazimajou, M Mouis, B Salem, C Ternon
Materials Chemistry and Physics 238, 121871, 2019
Các cơ quan ủy nhiệm: European Commission
Engineering self-assembly of a high-χ block copolymer for large-area fabrication of transistors based on functional graphene nanoribbon arrays
J Arias-Zapata, JD Garnier, HA Mehedi, A Legrain, B Salem, G Cunge, ...
Chemistry of Materials 31 (9), 3154-3162, 2019
Các cơ quan ủy nhiệm: Agence Nationale de la Recherche
Verifying the band gap narrowing in tensile strained Ge nanowires by electrical means
MG Bartmann, M Sistani, S Glassner, B Salem, T Baron, P Gentile, ...
Nanotechnology 32 (14), 145711, 2021
Các cơ quan ủy nhiệm: Austrian Science Fund
Formation mechanisms of ZnO nanowires on polycrystalline Au seed layers for piezoelectric applications
C Lausecker, B Salem, X Baillin, H Roussel, E Sarigiannidou, F Bassani, ...
Nanotechnology 30 (34), 345601, 2019
Các cơ quan ủy nhiệm: Agence Nationale de la Recherche
High figure-of-merit in Al-doped ZnO thin films grown by ALD through the Al content adjustment
QC Bui, V Consonni, S Boubenia, G Gay, C Perret, M Zeghouane, ...
Materialia 31, 101863, 2023
Các cơ quan ủy nhiệm: Agence Nationale de la Recherche
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