Five-volt vertically-stacked, single-cell GaAs photonic power converter CE Valdivia, MM Wilkins, B Bouzazi, A Jaouad, V Aimez, R Arès, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV …, 2015
48 2015 Simulation of a through cell via contacts architecture for HCPV multi-junction solar cells O Richard, A Jaouad, B Bouzazi, R Arès, S Fafard, V Aimez
Solar Energy Materials and Solar Cells 144, 173-180, 2016
25 2016 Properties of Chemical Beam Epitaxy grown GaAs0. 995N0. 005 homo-junction solar cell B Bouzazi, K Nishimura, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi
Current Applied Physics 10 (2), S188-S190, 2010
23 2010 Double carriers pulse DLTS for the characterization of electron–hole recombination process in GaAsN grown by chemical beam epitaxy B Bouzazi, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi
Physica B: Condensed Matter 406 (5), 1070-1075, 2011
21 2011 Origin investigation of a nitrogen-related recombination center in GaAsN grown by chemical beam epitaxy B Bouzazi, JH Lee, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi
Japanese Journal of Applied Physics 50 (5R), 051001, 2011
18 2011 Nitrogen-related recombination center in GaAsN grown by chemical beam epitaxy B Bouzazi, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi
Japanese Journal of Applied Physics 49 (5R), 051001, 2010
17 2010 Nitrogen related electron trap with high capture cross section in n-type GaAsN grown by chemical beam epitaxy B Bouzazi, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi
Applied physics express 3 (5), 051002, 2010
17 2010 Advances with vertical epitaxial heterostructure architecture (VEHSA) phototransducers for optical to electrical power conversion efficiencies exceeding 50 percent S Fafard, F Proulx, MCA York, M Wilkins, CE Valdivia, M Bajcsy, D Ban, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V 9743 …, 2016
16 2016 Impact of via hole integration on multijunction solar cells for through cell via contacts and associated passivation treatment M de Lafontaine, M Darnon, C Colin, B Bouzazi, M Volatier, R Ares, ...
IEEE Journal of Photovoltaics 7 (5), 1456-1461, 2017
15 2017 Thin n/p GaAs junctions for novel high-efficiency phototransducers based on a vertical epitaxial heterostructure architecture MCA York, F Proulx, DP Masson, A Jaouad, B Bouzazi, R Arès, V Aimez, ...
Mrs Advances 1 (14), 881-890, 2016
15 2016 Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi
Journal of alloys and compounds 552, 469-474, 2013
14 2013 Properties of a nitrogen-related hole trap acceptor-like state in p-type GaAsN grown by chemical beam epitaxy B Bouzazi, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi
Japanese Journal of Applied Physics 49 (12R), 121001, 2010
14 2010 Effect of electron and proton irradiation on recombination centers in GaAsN grown by chemical beam epitaxy B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi
Current Applied Physics 13 (7), 1269-1274, 2013
13 2013 Enhanced photocarrier extraction mechanisms in ultra-thin photovoltaic GaAs n/p junctions MCA York, F Proulx, DP Masson, A Jaouad, B Bouzazi, R Arès, V Aimez, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V 9743 …, 2016
9 2016 Plasma etching applications in concentrated photovoltaic cell fabrication M de Lafontaine, M Darnon, A Jaouad, P Albert, B Bouzazi, C Colin, ...
AIP Conference Proceedings 1766 (1), 2016
7 2016 Design optimizations of InGaAsN (Sb) subcells for concentrator photovoltaic systems R Cheriton, MM Wilkins, P Sharma, CE Valdivia, AH Trojnar, H Schriemer, ...
Journal of Vacuum Science & Technology B 34 (2), 2016
7 2016 III-VN materials for super high-efficiency multijunction solar cells M Yamaguchi, B Bouzazi, H Suzuki, K Ikeda, N Kojima, Y Ohshita
AIP Conference Proceedings 1477 (1), 24-27, 2012
7 2012 Analysis of current transport mechanisms in GaAsN homojunction solar cell grown by chemical beam epitaxy B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 1-7, 2012
7 2012 Design of thin InGaAsN(Sb) MM Wilkins, J Gupta, A Jaouad, B Bouzazi, S Fafard, A Boucherif, ...
Journal of Photonics for Energy 7 (2), 022502-022502, 2017
6 2017 Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi
Japanese Journal of Applied Physics 51 (2S), 02BP02, 2012
6 2012 
Richard ArèsUniversité de SherbrookeEmail được xác minh tại usherbrooke.ca
