Theo dõi
A.N.Nazarov
A.N.Nazarov
Institute of Semiconductor Physics NASU
Email được xác minh tại lab15.kiev.ua
Tiêu đề
Trích dẫn bởi
Trích dẫn bởi
Năm
Reduced electric field in junctionless transistors
JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (7), 2010
3802010
Low subthreshold slope in junctionless multigate transistors
CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (10), 2010
2812010
Semiconductor-on-insulator materials for nanoelectronics applications
A Nazarov, JP Colinge, F Balestra, JP Raskin, F Gamiz, VS Lysenko
Springer Berlin Heidelberg, 2011
1722011
An ammonia sensor composed of polypyrrole synthesized on reduced graphene oxide by electropolymerization
X Tang, JP Raskin, N Kryvutsa, S Hermans, O Slobodian, AN Nazarov, ...
Sensors and Actuators B: Chemical 305, 127423, 2020
882020
Low-temperature reduction of graphene oxide: electrical conductance and scanning kelvin probe force microscopy
OM Slobodian, PM Lytvyn, AS Nikolenko, VM Naseka, OY Khyzhun, ...
Nanoscale research letters 13, 1-11, 2018
832018
Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals
A Nazarov, JM Sun, W Skorupa, RA Yankov, IN Osiyuk, IP Tjagulskii, ...
Applied Physics Letters 86 (15), 2005
812005
On the MOSFET threshold voltage extraction by transconductance and transconductance-to-current ratio change methods: Part II—Effect of drain voltage
T Rudenko, V Kilchytska, MKM Arshad, JP Raskin, A Nazarov, D Flandre
IEEE Transactions on Electron Devices 58 (12), 4180-4188, 2011
672011
Comparison of static and dynamic 18F-FDG PET/CT for quantification of pulmonary inflammation in acute lung injury
A Braune, F Hofheinz, T Bluth, T Kiss, J Wittenstein, M Scharffenberg, ...
Journal of Nuclear Medicine 60 (11), 1629-1634, 2019
63*2019
On the MOSFET threshold voltage extraction by transconductance and transconductance-to-current ratio change methods: Part I—Effect of gate-voltage-dependent mobility
T Rudenko, V Kilchytska, MKM Arshad, JP Raskin, A Nazarov, D Flandre
IEEE Transactions on Electron Devices 58 (12), 4172-4179, 2011
632011
Color control of white photoluminescence from carbon-incorporated silicon oxide
Y Ishikawa, AV Vasin, J Salonen, S Muto, VS Lysenko, AN Nazarov, ...
Journal of Applied Physics 104 (8), 2008
592008
Carrier mobility in undoped triple-gate FinFET structures and limitations of its description in terms of top and sidewall channel mobilities
T Rudenko, V Kilchytska, N Collaert, M Jurczak, A Nazarov, D Flandre
IEEE transactions on electron devices 55 (12), 3532-3541, 2008
552008
Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors
T Rudenko, A Nazarov, I Ferain, S Das, R Yu, S Barraud, P Razavi
Applied Physics Letters 101 (21), 2012
512012
Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides
T Rudenko, V Kilchytska, S Burignat, JP Raskin, F Andrieu, O Faynot, ...
Solid-State Electronics 54 (2), 164-170, 2010
492010
Kinetics of structural and phase transformations in thin SiOx films in the course of a rapid thermal annealing
VA Dan’ko, IZ Indutnyi, VS Lysenko, IY Maidanchuk, VI Min’ko, ...
Semiconductors 39, 1197-1203, 2005
492005
Trapping of negative and positive charges in ion implanted silicon dioxide layers subjected to high-field electron injection
AN Nazarov, T Gebel, L Rebohle, W Skorupa, IN Osiyuk, VS Lysenko
Journal of applied physics 94 (7), 4440-4448, 2003
472003
Random telegraph-signal noise in junctionless transistors
AN Nazarov, I Ferain, ND Akhavan, P Razavi, R Yu, JP Colinge
Applied Physics Letters 98 (9), 2011
462011
Comparative study of annealing and oxidation effects in a-SiC: H and a-SiC thin films deposited by radio-frequency magnetron sputtering
AV Vasin, S Muto, Y Ishikawa, AV Rusavsky, T Kimura, VS Lysenko, ...
Thin Solid Films 519 (7), 2218-2224, 2011
442011
The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices
AN Nazarov, SI Tiagulskyi, IP Tyagulskyy, VS Lysenko, L Rebohle, ...
Journal of Applied Physics 107 (12), 2010
442010
On the mechanism of electroluminescence excitation in Er-doped SiO2 containing silicon nanoclusters
JM Sun, W Skorupa, T Dekorsy, M Helm, AN Nazarov
Optical Materials 27 (5), 1050-1054, 2005
432005
Blue and red electroluminescence of Europium-implanted metal-oxide-semiconductor structures as a probe for the dynamics of microstructure
L Rebohle, J Lehmann, S Prucnal, A Kanjilal, A Nazarov, I Tyagulskii, ...
Applied Physics Letters 93 (7), 2008
422008
Hệ thống không thể thực hiện thao tác ngay bây giờ. Hãy thử lại sau.
Bài viết 1–20