| Nanowire transistors without junctions JP Colinge, CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, P Razavi, ... Nature nanotechnology 5 (3), 225-229, 2010 | 2894 | 2010 |
| Junctionless nanowire transistor (JNT): properties and design guidelines JP Colinge, A Kranti, R Yan, CW Lee, I Ferain, R Yu, ... Solid-State Electronics 65, 33-37, 2011 | 1882* | 2011 |
| Junctionless nanowire transistor (JNT): Properties and design guidelines JP Colinge, A Kranti, R Yan, CW Lee, I Ferain, R Yu, ND Akhavan, ... Solid-State Electronics 65, 33-37, 2011 | 1882* | 2011 |
| Performance estimation of junctionless multigate transistors CW Lee, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, JP Colinge Solid-State Electronics 54 (2), 97-103, 2010 | 649 | 2010 |
| High-temperature performance of silicon junctionless MOSFETs CW Lee, A Borne, I Ferain, A Afzalian, R Yan, N Dehdashti Akhavan, ... Electron Devices, IEEE Transactions on 57 (3), 620-625, 2010 | 448 | 2010 |
| Reduced electric field in junctionless transistors JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ... Applied Physics Letters 96 (7), 073510, 2010 | 380 | 2010 |
| Junctionless multiple-gate transistors for analog applications RT Doria, MA Pavanello, RD Trevisoli, M de Souza, CW Lee, I Ferain, ... IEEE transactions on electron devices 58 (8), 2511-2519, 2011 | 288 | 2011 |
| Low subthreshold slope in junctionless multigate transistors CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ... Applied Physics Letters 96 (10), 102106, 2010 | 281 | 2010 |
| SOI gated resistor: CMOS without junctions JP Colinge, CW Lee, A Afzalian, N Dehdashti, R Yan, I Ferain, P Razavi, ... SOI Conference, 2009 IEEE International, 1-2, 2009 | 189 | 2009 |
| Junctionless transistors: physics and properties JP Colinge, CW Lee, ND Akhavan, R Yan, I Ferain, P Razavi, A Kranti, ... Semiconductor-On-Insulator Materials for Nanoelectronics Applications, 187-200, 2011 | 160 | 2011 |
| Nanoscale Triple Material Double Gate (TM-DG) MOSFET for Improving Short Channel Effects P Razavi, AA Orouji Advances in Electronics and Micro-electronics, 2008. ENICS'08. International …, 2008 | 67 | 2008 |
| Mobility improvement in nanowire junctionless transistors by uniaxial strain JP Raskin, JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, R Yan, ... Applied Physics Letters 97 (4), 042114, 2010 | 63 | 2010 |
| Improvement of carrier ballisticity in junctionless nanowire transistors N Dehdashti Akhavan, I Ferain, P Razavi, R Yu, JP Colinge Applied Physics Letters 98 (10), 103510, 2011 | 61 | 2011 |
| Junctionless 6T SRAM cell A Kranti, CW Lee, I Ferain, R Yan, N Akhavan, P Razavi, R Yu, ... Electronics letters 46 (22), 1491-1493, 2010 | 58 | 2010 |
| Junctionless Nanowire Transistor: Complementary Metal-Oxide-Semiconductor Without Junctions JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, P Razavi, R Yan, ... Science of Advanced Materials 3 (3), 477-482, 2011 | 53 | 2011 |
| Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors T Rudenko, A Nazarov, I Ferain, S Das, R Yu, S Barraud, P Razavi Applied Physics Letters 101 (21), 213502, 2012 | 51 | 2012 |
| Short-channel junctionless nanowire transistors CW Lee, I Ferain, A Kranti, ND Akhavan, P Razavi, R Yan, R Yu, B O’Neill, ... Proc. SSDM, 1044-1045, 2010 | 50 | 2010 |
| A Simulation comparison between junctionless and inversion-mode MuGFETs JP Colinge, A Kranti, R Yan, I Ferain, ND Akhavan, P Razavi, CW Lee, ... ECS Transactions 35 (5), 63-72, 2011 | 46 | 2011 |
| Random telegraph-signal noise in junctionless transistors AN Nazarov, I Ferain, ND Akhavan, P Razavi, R Yu, JP Colinge Applied Physics Letters 98 (9), 092111, 2011 | 46 | 2011 |
| Dual material gate oxide stack symmetric double gate MOSFET: Improving short channel effects of nanoscale double gate MOSFET P Razavi, AA Orouji Electronics Conference, 2008. BEC 2008. 11th International Biennial Baltic …, 2008 | 45 | 2008 |
