Nanoparticles as antiviral agents against adenoviruses V Lysenko, V Lozovski, M Lokshyn, YV Gomeniuk, A Dorovskih, ...
Advances in Natural Sciences: Nanoscience and Nanotechnology 9 (2), 025021, 2018
105 2018 Effect of oxide–semiconductor interface traps on low-temperature operation of MOSFETs VS Lysenko, IP Tyagulski, YV Gomeniuk, IN Osiyuk
Microelectronics Reliability 40 (4-5), 735-738, 2000
25 2000 Far-infrared absorption due to electronic transitions of N–O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration HC Alt, YV Gomeniuk, F Bittersberger, A Kempf, D Zemke
Applied Physics Letters 87 (15), 2005
24 2005 Local mode frequencies of the HC Alt, YV Gomeniuk
Physical Review B—Condensed Matter and Materials Physics 70 (16), 161314, 2004
24 2004 Charge trapping in ultrathin Gd2O3 high-k dielectric AN Nazarov, YV Gomeniuk, YY Gomeniuk, HDB Gottlob, M Schmidt, ...
Microelectronic engineering 84 (9-10), 1968-1971, 2007
21 2007 Carrier transfer effect on transport in p-i-n structures with Ge quantum dots VS Lysenko, YV Gomeniuk, VV Strelchuk, AS Nikolenko, SV Kondratenko, ...
Physical Review B—Condensed Matter and Materials Physics 84 (11), 115425, 2011
20 2011 Plasma treatment as a versatile tool for tuning of sorption properties of thin nanoporous carbon films OM Slobodian, PN Okholin, PM Lytvyn, SV Malyuta, OY Khyzhun, ...
Applied Surface Science 544, 148876, 2021
17 2021 Methane as a novel doping precursor for deposition of highly conductive ZnO thin films by magnetron sputtering AV Vasin, AV Rusavsky, EG Bortchagovsky, YV Gomeniuk, AS Nikolenko, ...
Vacuum 174, 109199, 2020
17 2020 Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials Y Gomeniuk, A Nazarov, Y Vovk, Y Lu, O Buiu, S Hall, JK Efavi, ...
Materials science in semiconductor processing 9 (6), 980-984, 2006
15 2006 Splitting of the local mode frequency of substitutional nitrogen in (Ga, In)(As, N) alloys due to symmetry lowering HC Alt, YV Gomeniuk, G Mussler
Semiconductor science and technology 21 (10), 1425, 2006
15 2006 Method to determine carbon in silicon by infrared absorption spectroscopy HC Alt, Y Gomeniuk, B Wiedemann, H Riemann
Journal of The Electrochemical Society 150 (8), G498, 2003
15 2003 Charge carrier transport, trapping, and recombination in PEDOT: PSS/n-Si solar cells S Kondratenko, V Lysenko, YV Gomeniuk, O Kondratenko, Y Kozyrev, ...
ACS Applied Energy Materials 2 (8), 5983-5991, 2019
14 2019 Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors VS Lysenko, IP Tyagulski, YV Gomeniuk, IN Osiyuk
Microelectronics reliability 40 (4-5), 799-802, 2000
14 2000 Thermally stimulated field emission of charge from traps in the transition layer of Si SiO2 structures YV Gomeniuk, RN Litovski, VS Lysenko, IN Osiyuk, IP Tyagulski
Applied surface science 55 (2-3), 179-185, 1992
14 1992 Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide HC Alt, YV Gomeniuk, U Kretzer
Journal of applied physics 101 (7), 2007
13 2007 Effect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX -Si Structures VS Lysenko, YV Gomeniuk, YN Kozyrev, MY Rubezhanska, VK Skylar, ...
Advanced Materials Research 276, 179-186, 2011
12 2011 Quantitative spectroscopy of substitutional nitrogen in GaAs1− xNx epitaxial layers by local vibrational mode absorption HC Alt, Y Gomeniuk, G Ebbinghaus, A Ramakrishnan, H Riechert
Semiconductor science and technology 18 (4), 303, 2003
11 2003 Analysis of electrically active N–O complexes in nitrogen-doped CZ silicon crystals by FTIR spectroscopy HC Alt, YV Gomeniuk, F Bittersberger, A Kempf, D Zemke
Materials science in semiconductor processing 9 (1-3), 114-116, 2006
10 2006 Current stochasticity of field emission of charge from traps in the transition layer of implanted MIS structures YV Gomeniuk, RN Litovski, VS Lysenko, IN Osiyuk, IP Tyagulski
Applied surface science 59 (2), 91-94, 1992
10 1992 Highly porous carbon films fabricated by magnetron plasma enhanced chemical vapor deposition: Structure, properties and implementation OM Slobodian, AV Rusavsky, AV Vasin, OY Khyzhun, OI Gudymenko, ...
Applied Surface Science 496, 143735, 2019
9 2019 
A.N.NazarovInstitute of Semiconductor Physics NASUEmail được xác minh tại lab15.kiev.ua
