| CMOS small-signal and thermal noise modeling at high frequencies A Antonopoulos, M Bucher, K Papathanasiou, N Mavredakis, N Makris, ... IEEE transactions on electron devices 60 (11), 3726-3733, 2013 | 46 | 2013 |
| Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout M Bucher, A Nikolaou, A Papadopoulou, N Makris, L Chevas, G Borghello, ... 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS …, 2018 | 26 | 2018 |
| Charge-based model for junction FETs F Jazaeri, N Makris, A Saeidi, M Bucher, JM Sallese IEEE Transactions on Electron Devices 65 (7), 2694-2698, 2018 | 20 | 2018 |
| Analog performance of advanced CMOS in weak, moderate, and strong inversion M Bucher, G Diles, N Makris Proceedings of the 17th International Conference Mixed Design of Integrated …, 2010 | 20 | 2010 |
| Generalized constant current method for determining MOSFET threshold voltage M Bucher, N Makris, L Chevas IEEE Transactions on Electron Devices 67 (11), 4559-4562, 2020 | 19 | 2020 |
| Modeling of high total ionizing dose (TID) effects for enclosed layout transistors in 65 nm bulk CMOS A Nikolaou, M Bucher, N Makris, A Papadopoulou, L Chevas, G Borghello, ... 2018 International Semiconductor Conference (CAS), 133-136, 2018 | 17 | 2018 |
| Charge-based modeling of long-channel symmetric double-gate junction FETs—Part II: Total charges and transcapacitances N Makris, F Jazaeri, JM Sallese, M Bucher IEEE Transactions on Electron Devices 65 (7), 2751-2756, 2018 | 16 | 2018 |
| Investigation of scaling and temperature effects in total ionizing dose (TID) experiments in 65 nm CMOS L Chevas, A Nikolaou, M Bucher, N Makris, A Papadopoulou, A Zografos, ... 2018 25th International Conference" Mixed Design of Integrated Circuits and …, 2018 | 15 | 2018 |
| Charge-Based Compact Model for Bias-Dependent Variability of 1/ Noise in MOSFETs N Mavredakis, N Makris, P Habas, M Bucher IEEE Transactions on Electron Devices 63 (11), 4201-4208, 2016 | 15 | 2016 |
| Charge-based modeling of long-channel symmetric double-gate junction FETs—Part I: Drain current and transconductances N Makris, F Jazaeri, JM Sallese, RK Sharma, M Bucher IEEE Transactions on Electron Devices 65 (7), 2744-2750, 2018 | 14 | 2018 |
| CMOS RF noise, scaling, and compact modeling for RFIC design A Antonopoulos, M Bucher, K Papathanasiou, N Makris, RK Sharma, ... 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 53-56, 2013 | 14 | 2013 |
| CJM: a compact model for double-gate junction FETs N Makris, M Bucher, F Jazaeri, JM Sallese IEEE Journal of the Electron Devices Society 7, 1191-1199, 2019 | 12 | 2019 |
| Investigation of the dose-and time-dependence of the induction of different types of cell death in a small‑cell lung cancer cell line: Implementation of the repairable … N Makris, M Edgren, P Mavroidis, BK Lind International Journal of Oncology 42 (6), 2019-2027, 2013 | 10 | 2013 |
| A compact model for static and dynamic operation of symmetric double-gate junction FETs N Makris, M Bucher, F Jazaeri, JM Sallese 2018 48th European Solid-State Device Research Conference (ESSDERC), 238-241, 2018 | 9 | 2018 |
| Extending a 65nm CMOS process design kit for high total ionizing dose effects A Nikolaou, M Bucher, N Makris, A Papadopoulou, L Chevas, G Borghello, ... 2018 7th International Conference on Modern Circuits and Systems …, 2018 | 9 | 2018 |
| Comparison of Impact Ionization Models for 4H-SiC Along the< 0001> Direction, Through Breakdown Voltage Simulations at Room Temperature D Stefanakis, N Makris, K Zekentes, D Tassis IEEE Transactions on Electron Devices 68 (5), 2582-2586, 2021 | 7 | 2021 |
| Foss ekv2. 6 verilog-a compact mosfet model W Grabinski, M Pavanello, M de Souza, D Tomaszewski, J Malesinska, ... ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 7 | 2019 |
| Variability of low frequency noise and mismatch in enclosed-gate and standard nMOSFETs M Bucher, A Nikolaou, N Mavredakis, N Makris, M Coustans, J Lolivier, ... 2017 International Conference of Microelectronic Test Structures (ICMTS), 1-4, 2017 | 7 | 2017 |
| Compact modeling of low frequency noise and thermal noise in junction field effect transistors N Makris, L Chevas, M Bucher ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 5 | 2019 |
| Charge-based compact model for bias-dependent variability of N Mavredakis, N Makris, P Habas, M Bucher IEEE Trans. Electron Devices 63 (11), 4201-4208, 2016 | 5 | 2016 |
Matthias BucherSchool of Electrical & Computer Engineering, Technical University of Crete (TUC), Chania, Greece在 electronics.tuc.gr 的电子邮件经过验证