| Resistive memories for ultra-low-power embedded computing design E Vianello, O Thomas, G Molas, O Turkyilmaz, N Jovanovic, D Garbin, ... 2014 IEEE International Electron Devices Meeting 6, 1-6.3, 2014 | 117 | 2014 |
| In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors M Alayan, E Vianello, G Navarro, C Carabasse, S La Barbera, A Verdy, ... 2017 IEEE International Electron Devices Meeting (IEDM), 2.3. 1-2.3. 4, 2017 | 26 | 2017 |
| Experimental and Simulation Studies of the Effects of Heavy-Ion Irradiation on HfO2-Based RRAM Cells M Alayan, M Bagatin, S Gerardin, A Paccagnella, L Larcher, E Vianello, ... IEEE Transactions on Nuclear Science 64 (8), 2038-2045, 2017 | 24 | 2017 |
| Write Termination Circuits for RRAM: A Holistic Approach From Technology to Application Considerations A Levisse, M Bocquet, M Rios, M Alayan, M Moreau, E Nowak, G Molas, ... IEEE Access 8, 109297 - 109308, 2020 | 17 | 2020 |
| Switching event detection and self-termination programming circuit for energy efficient reram memory arrays M Alayan, E Muhr, A Levisse, M Bocquet, M Moreau, E Nowak, G Molas, ... IEEE Transactions on Circuits and Systems II: Express Briefs 66 (5), 748-752, 2019 | 13 | 2019 |
| Correlated Effects on Forming and Retention of Al Doping in HfO2-Based RRAM M Alayan, E Vianello, B De Salvo, L Perniola, A Padovani, L Larcher IEEE Design & Test 34 (3), 23-30, 2017 | 11 | 2017 |
| Investigation of HfO2 based Resistive Random Access Memory (RRAM): characterization and modeling of cell reliability and novel access device M Alayan Université Grenoble Alpes, 2018 | 6 | 2018 |
| Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells M Barlas, B Traoré, L Grenouillet, S Bernasconi, P Blaise, M Alayan, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 168-171, 2016 | 5 | 2016 |
| Resistive memories for ultra-low-power embedded computing design, IEDM Technical Digest E Vianello, O Thomas, G Molas, O Turkyilmaz, N Jovanovic, D Garbin, ... San Francisco, CA 6, 1-6.3, 0 | 4 | |
| Heavy-ion upset immunity of RRAM cells based on thin HfO2 layers M Alayan, M Bagatin, S Gerardin, A Paccagnella, E Vianello, E Nowak, ... 2016 16th European Conference on Radiation and Its Effects on Components and …, 2016 | 3 | 2016 |
| Self-rectifying behavior and analog switching under identical pulses using Tri-layer RRAM crossbar array for neuromorphic systems M Alayan, E Vianello, L Larcher, A Padovani, A Levisse, N Castellani, ... 2017 IEEE International Memory Workshop (IMW), 1-4, 2017 | 2 | 2017 |
| Embedded measurement of the SET switching time of RRAM memory cells F Jebali, E Muhr, M Alayan, MC Faye, D Querlioz, F Andrieu, E Vianello, ... 2022 IEEE 34th International Conference on Microelectronic Test Structures …, 2022 | 1 | 2022 |
| 2019 Index IEEE Transactions on Circuits and Systems II: Express Briefs Vol. 66 MSE Abadi, A Abbosh, D Abbott, AB Abdel-Rahman, A Abdi, GI Abib, ... IEEE Transactions on Circuits and Systems II: Express Briefs 66 (12), 2019 | | 2019 |
