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So-Yeon Kim
So-Yeon Kim
Instituto de Tecnología Química. Universitat Politècnica de València
在 itq.upv.es 的电子邮件经过验证
标题
引用次数
引用次数
年份
Perovskite-related (CH 3 NH 3) 3 Sb 2 Br 9 for forming-free memristor and low-energy-consuming neuromorphic computing
JM Yang, ES Choi, SY Kim, JH Kim, JH Park, NG Park
Nanoscale 11 (13), 6453-6461, 2019
1462019
Layered (C6H5CH2NH3)2CuBr4 Perovskite for Multilevel Storage Resistive Switching Memory
SY Kim, JM Yang, ES Choi, NG Park
Advanced Functional Materials, 2002653, 2020
1082020
Efficient surface passivation of perovskite films by a post-treatment method with a minimal dose
DH Kang, SY Kim, JW Lee, NG Park
Journal of Materials Chemistry A 9 (6), 3441-3450, 2021
842021
Effect of interlayer spacing in layered perovskites on resistive switching memory
SY Kim, JM Yang, ES Choi, NG Park
Nanoscale 11 (30), 14330-14338, 2019
502019
Synthetic Powder-Based Thin (<0.1 μm) Cs3Bi2Br9 Perovskite Films for Air-Stable and Viable Resistive Switching Memory
SY Kim, DA Park, NG Park
ACS Applied Electronic Materials 4 (5), 2388-2395, 2022
372022
A layered (n-C 4 H 9 NH 3) 2 CsAgBiBr 7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio
SY Kim, JM Yang, SH Lee, NG Park
Nanoscale 13 (29), 12475-12483, 2021
322021
Asymmetric carrier transport in flexible interface-type memristor enables artificial synapses with sub-femtojoule energy consumption
JM Yang, YK Jung, JH Lee, YC Kim, SY Kim, S Seo, DA Park, JH Kim, ...
Nanoscale Horizons 6 (12), 987-997, 2021
282021
High-performing laminated perovskite solar cells by surface engineering of perovskite films
OY Gong, MK Seo, JH Choi, SY Kim, DH Kim, IS Cho, NG Park, GS Han, ...
Applied Surface Science 591, 153148, 2022
192022
Mixed‐Dimensional Formamidinium Bismuth Iodides Featuring In‐Situ Formed Type‐I Band Structure for Convolution Neural Networks
JM Yang, JH Lee, YK Jung, SY Kim, JH Kim, SG Kim, JH Kim, S Seo, ...
Advanced Science 9 (14), 2200168, 2022
182022
The effect of compositional engineering of imidazolium lead iodide on the resistive switching properties
ES Choi, JM Yang, SG Kim, C Cuhadar, SY Kim, SH Kim, D Lee, NG Park
Nanoscale 11 (30), 14455-14464, 2019
172019
Artificial Synapse Based on a δ-FAPbI3/Atomic-Layer-Deposited SnO2 Bilayer Memristor
SU Lee, SY Kim, JH Lee, JH Baek, JW Lee, HW Jang, NG Park
Nano Letters, 2024
102024
Intact metal/metal halide van der Waals junction enables reliable memristive switching with high endurance
JH Lee, JM Yang, SY Kim, S Baek, S Lee, SJ Lee, NG Park, JW Lee
Advanced Functional Materials 33 (14), 2214142, 2023
82023
Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices
SY Kim, H Zhang, J Rubio-Magnieto
The Journal of Physical Chemistry Letters 15, 10087–10103, 2024
22024
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