| The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2 A Pirkle, J Chan, A Venugopal, D Hinojos, CW Magnuson, S McDonnell, ... Applied Physics Letters 99 (12), 2011 | 1168 | 2011 |
| Defect-Dominated Doping and Contact Resistance in MoS2 S McDonnell, R Addou, C Buie, RM Wallace, CL Hinkle ACS nano 8 (3), 2880-2888, 2014 | 913 | 2014 |
| MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts S Chuang, C Battaglia, A Azcatl, S McDonnell, JS Kang, X Yin, M Tosun, ... Nano letters 14 (3), 1337-1342, 2014 | 653 | 2014 |
| Hole Selective MoOx Contact for Silicon Solar Cells C Battaglia, X Yin, M Zheng, ID Sharp, T Chen, S McDonnell, A Azcatl, ... Nano letters 14 (2), 967-971, 2014 | 639 | 2014 |
| 2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications Z Lin, A McCreary, N Briggs, S Subramanian, K Zhang, Y Sun, X Li, ... 2D Materials 3 (4), 042001, 2016 | 560 | 2016 |
| GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 2008 | 494 | 2008 |
| Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ... ACS nano 9 (2), 2080-2087, 2015 | 465 | 2015 |
| Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon LL Zhang, X Zhao, H Ji, MD Stoller, L Lai, S Murali, S Mcdonnell, ... Energy & Environmental Science 5 (11), 9618-9625, 2012 | 450 | 2012 |
| Toward the controlled synthesis of hexagonal boron nitride films A Ismach, H Chou, DA Ferrer, Y Wu, S McDonnell, HC Floresca, ... ACS nano 6 (7), 6378-6385, 2012 | 388 | 2012 |
| HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ... ACS nano 7 (11), 10354-10361, 2013 | 331 | 2013 |
| Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces R Addou, S McDonnell, D Barrera, Z Guo, A Azcatl, J Wang, H Zhu, ... ACS nano 9 (9), 9124-9133, 2015 | 308 | 2015 |
| Air Stable p-Doping of WSe2 by Covalent Functionalization P Zhao, D Kiriya, A Azcatl, C Zhang, M Tosun, YS Liu, M Hettick, JS Kang, ... ACS nano 8 (10), 10808-10814, 2014 | 282 | 2014 |
| Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition J Chan, A Venugopal, A Pirkle, S McDonnell, D Hinojos, CW Magnuson, ... ACS nano 6 (4), 3224-3229, 2012 | 277 | 2012 |
| HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ... ACS nano 9 (1), 474-480, 2015 | 259 | 2015 |
| MoS2 functionalization for ultra-thin atomic layer deposited dielectrics A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ... Applied Physics Letters 104 (11), 2014 | 239 | 2014 |
| Hole contacts on transition metal dichalcogenides: Interface chemistry and band alignments S McDonnell, A Azcatl, R Addou, C Gong, C Battaglia, S Chuang, K Cho, ... ACS nano 8 (6), 6265-6272, 2014 | 223 | 2014 |
| Passivation of a corrosion resistant high entropy alloy in non-oxidizing sulfate solutions KF Quiambao, SJ McDonnell, DK Schreiber, AY Gerard, KM Freedy, P Lu, ... Acta materialia 164, 362-376, 2019 | 192 | 2019 |
| Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance CM Smyth, R Addou, S McDonnell, CL Hinkle, RM Wallace The Journal of Physical Chemistry C 120 (27), 14719-14729, 2016 | 167 | 2016 |
| MoS2–Titanium Contact Interface Reactions S McDonnell, C Smyth, CL Hinkle, RM Wallace ACS applied materials & interfaces 8 (12), 8289-8294, 2016 | 162 | 2016 |
| Atomically-thin layered films for device applications based upon 2D TMDC materials SJ McDonnell, RM Wallace Thin Solid Films 616, 482-501, 2016 | 161 | 2016 |
Robert M. WallaceUniversity of Texas at Dallas在 utdallas.edu 的电子邮件经过验证