| Trapping effects and microwave power performance in AlGaN/GaN HEMTs SC Binari, K Ikossi, JA Roussos, W Kruppa, D Park, HB Dietrich, ... IEEE Transactions on Electron Devices 48 (3), 465-471, 2001 | 837 | 2001 |
| Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well M Achermann, MA Petruska, S Kos, DL Smith, DD Koleske, VI Klimov Nature 429 (6992), 642-646, 2004 | 703 | 2004 |
| Effect of dislocation density on efficiency droop in GaInN∕ GaN light-emitting diodes MF Schubert, S Chhajed, JK Kim, EF Schubert, DD Koleske, MH Crawford, ... Applied Physics Letters 91 (23), 2007 | 509 | 2007 |
| Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers AH Mueller, MA Petruska, M Achermann, DJ Werder, EA Akhadov, ... Nano Letters 5 (6), 1039-1044, 2005 | 499 | 2005 |
| Toward smart and ultra‐efficient solid‐state lighting JY Tsao, MH Crawford, ME Coltrin, AJ Fischer, DD Koleske, ... Advanced Optical Materials 2 (9), 809-836, 2014 | 413 | 2014 |
| Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy PB Klein, SC Binari, K Ikossi, AE Wickenden, DD Koleske, RL Henry Applied Physics Letters 79 (21), 3527-3529, 2001 | 381 | 2001 |
| Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities Q Dai, MF Schubert, MH Kim, JK Kim, EF Schubert, DD Koleske, ... Applied Physics Letters 94 (11), 2009 | 370 | 2009 |
| Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers SR Lee, AM West, AA Allerman, KE Waldrip, DM Follstaedt, PP Provencio, ... Applied Physics Letters 86 (24), 2005 | 367 | 2005 |
| Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN DD Koleske, AE Wickenden, RL Henry, ME Twigg Journal of crystal growth 242 (1-2), 55-69, 2002 | 367 | 2002 |
| Nanocrystal-based light-emitting diodes utilizing high-efficiency nonradiative energy transfer for color conversion M Achermann, MA Petruska, DD Koleske, MH Crawford, VI Klimov Nano letters 6 (7), 1396-1400, 2006 | 285 | 2006 |
| GaN decomposition in H2 and N2 at MOVPE temperatures and pressures DD Koleske, AE Wickenden, RL Henry, JC Culbertson, ME Twigg Journal of crystal growth 223 (4), 466-483, 2001 | 278 | 2001 |
| Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes Q Dai, Q Shan, J Wang, S Chhajed, J Cho, EF Schubert, MH Crawford, ... Applied Physics Letters 97 (13), 2010 | 274 | 2010 |
| The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes D Zhu, J Xu, AN Noemaun, JK Kim, EF Schubert, MH Crawford, ... Applied Physics Letters 94 (8), 2009 | 247 | 2009 |
| Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays Q Li, KR Westlake, MH Crawford, SR Lee, DD Koleske, JJ Figiel, ... Optics express 19 (25), 25528-25534, 2011 | 238 | 2011 |
| Growth model for GaN with comparison to structural, optical, and electrical properties DD Koleske, AE Wickenden, RL Henry, WJ DeSisto, RJ Gorman Journal of Applied Physics 84 (4), 1998-2010, 1998 | 228 | 1998 |
| Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys AA Allerman, MH Crawford, AJ Fischer, KHA Bogart, SR Lee, ... Journal of crystal growth 272 (1-4), 227-241, 2004 | 218 | 2004 |
| The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation VM Bermudez, DD Koleske, AE Wickenden Applied surface science 126 (1-2), 69-82, 1998 | 176 | 1998 |
| Atomic H abstraction of surface H on Si: An Eley–Rideal mechanism? DD Koleske, SM Gates, B Jackson The Journal of chemical physics 101 (4), 3301-3309, 1994 | 169 | 1994 |
| In situ measurements of the critical thickness for strain relaxation in AlGaN∕ GaN heterostructures SR Lee, DD Koleske, KC Cross, JA Floro, KE Waldrip, AT Wise, ... Applied physics letters 85 (25), 6164-6166, 2004 | 155 | 2004 |
| Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence DD Koleske, AJ Fischer, AA Allerman, CC Mitchell, KC Cross, SR Kurtz, ... Applied Physics Letters 81 (11), 1940-1942, 2002 | 151 | 2002 |
George T. WangSandia National Laboratories在 sandia.gov 的电子邮件经过验证
