| Epitaxial growth technique for single-crystalline PbTiO3 thin film on Si substrate using an HfO2 buffer layer H Park, T Kijima, H Tabata Japanese Journal of Applied Physics 60 (SF), SFFB14, 2021 | 2 | 2021 |
| Fabrication of Ultrathin Ferroelectric Al0.7Sc0.3N Films under Complementary‐Metal‐Oxide‐Semiconductor Compatible Conditions by using HfN0.4 Electrode SK Ryoo, KD Kim, W Choi, P Sriboriboon, S Heo, H Seo, YH Jang, ... Advanced Materials 37 (1), 2413295, 2025 | 1 | 2025 |
| Optimization of the 4 nm-Thick Hf1–xZrxO2 Film with Low Operating Voltage and High Endurance for Ferroelectric Random Access Memory HS Park, S Choi, KD Kim, MK Yeom, SH Lee, SK Ryoo, CS Hwang ACS Applied Electronic Materials 6 (9), 6826-6836, 2024 | 1 | 2024 |
| Comparative study on the stability of ferroelectric polarization of HfZrO2 and AlScN thin films over the depolarization effect KD Kim, SK Ryoo, HS Park, S Choi, TW Park, MK Yeom, CS Hwang Journal of Applied Physics 136 (2), 2024 | 1 | 2024 |
| Internal strain identification of seed-layered ZrO2, aluminum-, and yttrium-doped ZrO2 thin films via grazing incidence x-ray diffraction H Seo, HS Park, ST Cho, J Shin, J Lim, TK Kim, H Paik, H Song, ... Journal of Applied Physics 136 (1), 2024 | 1 | 2024 |
| Investigation of ferro-resistive switching mechanisms in TiN/Hf0. 5Zr0. 5O2/WOx/W ferroelectric tunnel junctions with the interface layer effect SH Lee, HS Park, SJ Shin, IS Lee, SK Ryoo, S Byun, KD Kim, T Moon, ... Applied Physics Reviews 11 (4), 2024 | | 2024 |
