| The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ... IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011 | 542 | 2011 |
| Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs T Aichinger, G Rescher, G Pobegen Microelectronics Reliability 80, 68-78, 2018 | 272 | 2018 |
| Review on SiC MOSFETs high-voltage device reliability focusing on threshold voltage instability K Puschkarsky, T Grasser, T Aichinger, W Gustin, H Reisinger IEEE Transactions on Electron Devices 66 (11), 4604-4616, 2019 | 184 | 2019 |
| Performance and ruggedness of 1200V SiC—Trench—MOSFET D Peters, R Siemieniec, T Aichinger, T Basler, R Esteve, W Bergner, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 161 | 2017 |
| Understanding BTI in SiC MOSFETs and its impact on circuit operation K Puschkarsky, H Reisinger, T Aichinger, W Gustin, T Grasser IEEE Transactions on device and materials reliability 18 (2), 144-153, 2018 | 105 | 2018 |
| Investigation of threshold voltage stability of SiC MOSFETs D Peters, T Aichinger, T Basler, G Rescher, K Puschkarsky, H Reisinger 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 97 | 2018 |
| The new CoolSiC™ trench MOSFET technology for low gate oxide stress and high performance D Peters, T Basler, B Zippelius, T Aichinger, W Bergner, R Esteve, ... PCIM Europe 2017; International Exhibition and Conference for Power …, 2017 | 90 | 2017 |
| A SiC trench MOSFET concept offering improved channel mobility and high reliability R Siemieniec, D Peters, R Esteve, W Bergner, D Kück, T Aichinger, ... 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 88 | 2017 |
| On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs G Rescher, G Pobegen, T Aichinger, T Grasser 2016 IEEE International Electron Devices Meeting (IEDM), 10.8. 1-10.8. 4, 2016 | 85 | 2016 |
| Unambiguous identification of the NBTI recovery mechanism using ultra-fast temperature changes T Aichinger, M Nelhiebel, T Grasser 2009 IEEE International Reliability Physics Symposium, 2-7, 2009 | 67 | 2009 |
| On the temperature dependence of NBTI recovery T Aichinger, M Nelhiebel, T Grasser Microelectronics Reliability 48 (8-9), 1178-1184, 2008 | 59 | 2008 |
| Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect T Aichinger, PM Lenahan Applied Physics Letters 101 (8), 2012 | 58 | 2012 |
| Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs K Puschkarsky, T Grasser, T Aichinger, W Gustin, H Reisinger 2018 IEEE International Reliability Physics Symposium (IRPS), 3B. 5-1-3B. 5-10, 2018 | 57 | 2018 |
| Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs T Aichinger, M Schmidt 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 56 | 2020 |
| Preconditioned BTI on 4H-SiC: Proposal for a nearly delay time-independent measurement technique G Rescher, G Pobegen, T Aichinger, T Grasser IEEE Transactions on Electron Devices 65 (4), 1419-1426, 2018 | 56 | 2018 |
| Understanding temperature acceleration for NBTI G Pobegen, T Aichinger, M Nelhiebel, T Grasser 2011 International Electron Devices Meeting, 27.3. 1-27.3. 4, 2011 | 47 | 2011 |
| In Situ Poly Heater—A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip T Aichinger, M Nelhiebel, S Einspieler, T Grasser IEEE Transactions on Device and Materials Reliability 10 (1), 3-8, 2009 | 47 | 2009 |
| A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation P Salmen, MW Feil, K Waschneck, H Reisinger, G Rescher, T Aichinger 2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021 | 44 | 2021 |
| Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region T Aichinger, R Esteve, D Peters, R Rupp, R Siemieniec US Patent 10,074,741, 2018 | 43 | 2018 |
| Practical aspects and body diode robustness of a 1200 V SiC trench MOSFET T Basler, D Heer, D Peters, T Aichinger, R Schoerner PCIM Europe 2018; International Exhibition and Conference for Power …, 2018 | 43 | 2018 |
