| The dawn of Ga2O3 HEMTs for high power electronics-A review R Singh, TR Lenka, DK Panda, RT Velpula, B Jain, HQT Bui, HPT Nguyen Materials Science in Semiconductor Processing 119, 105216, 2020 | 147 | 2020 |
| A comprehensive review on tunnel field-effect transistor (TFET) based biosensors: recent advances and future prospects on device structure and sensitivity NN Reddy, DK Panda Silicon 13 (9), 3085-3100, 2021 | 92 | 2021 |
| A comprehensive review on high electron mobility transistor (HEMT) Based biosensors: recent advances and future prospects and its comparison with Si-based biosensor V Hemaja, DK Panda Silicon, 1-14, 2021 | 48 | 2021 |
| Next Generation 2D Material Molybdenum Disulfide (MoS2): Properties, Applications and Challenges VP Kumar, DK Panda ECS Journal of Solid State Science and Technology 11 (3), 033012, 2022 | 45 | 2022 |
| A Comprehensive Review on FinFET in Terms of its Device Structure and Performance Matrices MN Reddy, DK Panda Silicon, 1-16, 2022 | 33 | 2022 |
| Nanowire gate all around-TFET-based biosensor by considering ambipolar transport NN Reddy, DK Panda Applied Physics A 127 (9), 1-9, 2021 | 32 | 2021 |
| Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya International Journal of RF and Microwave Computer‐Aided Engineering 31 (4 …, 2021 | 30 | 2021 |
| Rapid detection of biomolecules in a junction less tunnel field-effect transistor (JL-TFET) biosensor RB Peesa, DK Panda Silicon 14 (4), 1705-1711, 2022 | 26 | 2022 |
| Simulation study of dielectric modulated dual material gate TFET based biosensor by considering Ambipolar conduction NN Reddy, DK Panda Silicon 13 (12), 4545-4551, 2021 | 26 | 2021 |
| Modeling and simulation of DC and microwave characteristics of AlInN (AlGaN)/AlN/GaN MOSHEMTs with different gate lengths G Amarnath, DK Panda, TR Lenka International Journal of Numerical Modelling: Electronic Networks, Devices …, 2019 | 26 | 2019 |
| RF with linearity and non-linearity parameter analysis of gate all around negative capacitance junction less FET (GAA-NC-JLFET) for different ferroelectric thickness P Raut, U Nanda, DK Panda Physica Scripta, 2022 | 25 | 2022 |
| Analytical modelling for surface potential of dual material gate overlapped-on-drain TFET (DM-DMG-TFET) for label-free biosensing application NN Reddy, DK Panda, R Saha AEU-International Journal of Electronics and Communications 151, 154225, 2022 | 25 | 2022 |
| Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study DK Panda, R Singh, TR Lenka, TT Pham, RT Velpula, B Jain, HQT Bui, ... IET Circuits, Devices & Systems 14 (7), 1018-1025, 2020 | 23 | 2020 |
| Microwave frequency small‐signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT G Amarnath, DK Panda, TR Lenka International Journal of RF and Microwave Computer‐Aided Engineering 28 (2 …, 2018 | 23 | 2018 |
| DC and RF/analog parameters in Ge‐source split drain‐ZHP‐TFET: Drain and pocket engineering technique R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya International Journal of Numerical Modelling: Electronic Networks, Devices …, 2022 | 21 | 2022 |
| Performance analysis of Z‐shaped gate dielectric modulated (DM) tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal N+ pocket NN Reddy, DK Panda International Journal of Numerical Modelling: Electronic Networks, Devices …, 2021 | 21 | 2021 |
| Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications DK Panda, TR Lenka Journal of Semiconductors 38 (6), 064002, 2017 | 21 | 2017 |
| Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT DK Panda, TR Lenka AEU-International Journal of Electronics and Communications 82, 467-473, 2017 | 20 | 2017 |
| Linearity improvement in E‐mode ferroelectric GaN MOS‐HEMT using dual gate technology DK Panda, TR Lenka Micro & Nano Letters 14 (6), 618-622, 2019 | 19 | 2019 |
| Compact thermal noise model for enhancement mode N‐polar GaN MOS‐HEMT including 2DEG density solution with two sub‐bands DK Panda, TR Lenka IET Circuits, Devices & Systems 12 (6), 810-816, 2018 | 18 | 2018 |