| Complementary resistive switches for passive nanocrossbar memories E Linn, R Rosezin, C Kügeler, R Waser Nature materials 9 (5), 403-406, 2010 | 1451 | 2010 |
| Nanobatteries in redox-based resistive switches require extension of memristor theory I Valov, E Linn, S Tappertzhofen, S Schmelzer, J van den Hurk, F Lentz, ... Nature communications 4 (1), 1771, 2013 | 597 | 2013 |
| Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations E Linn, R Rosezin, S Tappertzhofen, U Böttger, R Waser Nanotechnology 23 (30), 305205, 2012 | 416 | 2012 |
| The programmable logic-in-memory (PLiM) computer PE Gaillardon, L Amarú, A Siemon, E Linn, R Waser, A Chattopadhyay, ... 2016 Design, Automation & Test in Europe Conference & Exhibition (DATE), 427-432, 2016 | 199 | 2016 |
| Realization of boolean logic functionality using redox‐based memristive devices A Siemon, T Breuer, N Aslam, S Ferch, W Kim, J Van Den Hurk, V Rana, ... Advanced functional materials 25 (40), 6414-6423, 2015 | 159 | 2015 |
| A complementary resistive switch-based crossbar array adder A Siemon, S Menzel, R Waser, E Linn IEEE journal on emerging and selected topics in circuits and systems 5 (1 …, 2015 | 150 | 2015 |
| Integrated complementary resistive switches for passive high-density nanocrossbar arrays R Rosezin, E Linn, L Nielen, C Kügeler, R Bruchhaus, R Waser IEEE Electron Device Letters 32 (2), 191-193, 2010 | 150 | 2010 |
| Applicability of well-established memristive models for simulations of resistive switching devices E Linn, A Siemon, R Waser, S Menzel IEEE Transactions on Circuits and Systems I: Regular Papers 61 (8), 2402-2410, 2014 | 142 | 2014 |
| Crossbar logic using bipolar and complementary resistive switches R Rosezin, E Linn, C Kugeler, R Bruchhaus, R Waser IEEE Electron Device Letters 32 (6), 710-712, 2011 | 108 | 2011 |
| Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAM C Kügeler, R Rosezin, E Linn, R Bruchhaus, R Waser Applied Physics A 102, 791-809, 2011 | 87 | 2011 |
| Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches J Van den Hurk, E Linn, H Zhang, R Waser, I Valov Nanotechnology 25 (42), 425202, 2014 | 83 | 2014 |
| Multistate memristive tantalum oxide devices for ternary arithmetic W Kim, A Chattopadhyay, A Siemon, E Linn, R Waser, V Rana Scientific reports 6 (1), 36652, 2016 | 80 | 2016 |
| Nanobattery effect in RRAMs—implications on device stability and endurance S Tappertzhofen, E Linn, U Böttger, R Waser, I Valov IEEE electron device letters 35 (2), 208-210, 2013 | 68 | 2013 |
| Memory devices: Energy–space–time tradeoffs VV Zhirnov, RK Cavin, S Menzel, E Linn, S Schmelzer, D Bräuhaus, ... Proceedings of the IEEE 98 (12), 2185-2200, 2010 | 68 | 2010 |
| A HfO2‐Based Complementary Switching Crossbar Adder T Breuer, A Siemon, E Linn, S Menzel, R Waser, V Rana Advanced Electronic Materials 1 (10), 1500138, 2015 | 67 | 2015 |
| Simulation of TaOx-based complementary resistive switches by a physics-based memristive model A Siemon, S Menzel, A Marchewka, Y Nishi, R Waser, E Linn 2014 IEEE international symposium on circuits and systems (ISCAS), 1420-1423, 2014 | 67 | 2014 |
| Capacity based nondestructive readout for complementary resistive switches S Tappertzhofen, E Linn, L Nielen, R Rosezin, F Lentz, R Bruchhaus, ... Nanotechnology 22 (39), 395203, 2011 | 58 | 2011 |
| Stateful three-input logic with memristive switches A Siemon, R Drabinski, MJ Schultis, X Hu, E Linn, A Heittmann, R Waser, ... Scientific reports 9 (1), 14618, 2019 | 56 | 2019 |
| Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures J van den Hurk, V Havel, E Linn, R Waser, I Valov Scientific Reports 3 (1), 2856, 2013 | 56 | 2013 |
| Field-driven hopping transport of oxygen vacancies in memristive oxide switches with interface-mediated resistive switching N Du, N Manjunath, Y Li, S Menzel, E Linn, R Waser, T You, D Bürger, ... Physical review applied 10 (5), 054025, 2018 | 53 | 2018 |